Semiconductor Components Industries, LLC, 2000
March, 2000 Rev. 2
1
Publication Order Number:
MC74HC86A/D
MC74HC86A
Quad 2-Input Exclusive
OR Gate
HighPerformance SiliconGate CMOS
The MC74HC86A is identical in pinout to the LS86. The device
inputs are compatible with standard CMOS outputs; with pullup
resistors, they are compatible with LSTTL outputs.
Output Drive Capability: 10 LSTTL Loads
Outputs Directly Interface to CMOS, NMOS, and TTL
Operating Voltage Range: 2 to 6 V
Low Input Current: 1
A
High Noise Immunity Characteristic of CMOS Devices
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
Chip Complexity: 56 FETs or 14 Equivalent Gates
LOGIC DIAGRAM
Y1
Y2
Y3
Y4
A1
B1
A2
B2
A3
B3
A4
B4
1
2
4
5
9
10
12
13
3
6
8
11
PIN 14 = VCC
PIN 7 = GND
Y = A
B
= AB + AB
PIN ASSIGNMENT
11
12
13
14
8
9
10
5
4
3
2
1
7
6
B3
Y4
A4
B4
VCC
Y3
A3
A2
Y1
B1
A1
GND
Y2
B2
Device
Package
Shipping
ORDERING INFORMATION
MC74HC86AN
PDIP14
2000 / Box
MC74HC86AD
SOIC14
http://onsemi.com
55 / Rail
MC74HC86ADR2
SOIC14
2500 / Reel
MARKING
DIAGRAMS
A
= Assembly Location
WL or L
= Wafer Lot
YY or Y
= Year
WW or W = Work Week
MC74HC86ADT
TSSOP14
96 / Rail
MC74HC86ADTR2
TSSOP14
2500 / Reel
TSSOP14
DT SUFFIX
CASE 948G
HC
86A
ALYW
1
14
1
14
PDIP14
N SUFFIX
CASE 646
MC74HC86AN
AWLYYWW
SOIC14
D SUFFIX
CASE 751A
1
14
HC86A
AWLYWW
FUNCTION TABLE
A
L
L
H
H
Inputs
Output
B
L
H
L
H
Y
L
H
H
L
MC74HC86A
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2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage (Referenced to GND)
0.5 to + 7.0
V
Vin
DC Input Voltage (Referenced to GND)
0.5 to VCC + 0.5
V
Vout
DC Output Voltage (Referenced to GND)
0.5 to VCC + 0.5
V
Iin
DC Input Current, per Pin
20
mA
Iout
DC Output Current, per Pin
25
mA
ICC
DC Supply Current, VCC and GND Pins
50
mA
PD
Power Dissipation in Still Air,
Plastic DIP
SOIC Package
TSSOP Package
750
500
450
mW
Tstg
Storage Temperature
65 to + 150
_
C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP, SOIC or TSSOP Package)
260
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
Derating -- Plastic DIP: 10 mW/
_
C from 65
_
to 125
_
C
SOIC Package: 7 mW/
_
C from 65
_
to 125
_
C
TSSOP Package: 6.1 mW/
_
C from 65
_
to 125
_
C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor HighSpeed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
Vin, Vout
DC Input Voltage, Output Voltage (Referenced to GND)
0
VCC
V
TA
Operating Temperature, All Package Types
55
+ 125
_
C
tr, tf
Input Rise and Fall Time
VCC = 2.0 V
(Figure 1)
VCC = 4.5 V
VCC = 6.0 V
0
0
0
1000
500
400
ns
DC ELECTRICAL CHARACTERISTICS
(Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Test Conditions
VCC
V
55 to
25
_
C
v
85
_
C
v
125
_
C
Unit
VIH
Minimum HighLevel Input
Voltage
Vout = 0.1 V or VCC 0.1 V
|Iout|
v
20
A
2.0
3.0
4.5
6.0
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
1.5
2.1
3.15
4.2
V
VIL
Maximum LowLevel Input
Voltage
Vout = 0.1 V or VCC 0.1 V
|Iout|
v
20
A
2.0
3.0
4.5
6.0
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
0.5
0.9
1.35
1.8
V
VOH
Minimum HighLevel Output
Voltage
Vin = VIH or VIL
|Iout|
v
20
A
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
V
Vin = VIH or VIL |Iout|
v
2.4 mA
|Iout|
v
4.0 mA
|Iout|
v
5.2 mA
3.0
4.5
6.0
2.48
3.98
5.48
2.34
3.84
5.34
2.20
3.70
5.20
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highimpedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND
v
(Vin or Vout)
v
VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
MC74HC86A
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
(Voltages Referenced to GND)
Unit
Guaranteed Limit
VCC
V
Test Conditions
Parameter
Symbol
Unit
v
125
_
C
v
85
_
C
55 to
25
_
C
VCC
V
Test Conditions
Parameter
Symbol
VOL
Maximum LowLevel Output
Voltage
Vin = VIH or VIL
|Iout|
v
20
A
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIH or VIL |Iout|
v
2.4 mA
|Iout|
v
4.0 mA
|Iout|
v
5.2 mA
3.0
4.5
6.0
0.26
0.26
0.26
0.33
0.33
0.33
0.40
0.40
0.40
Iin
Maximum Input Leakage
Current
Vin = VCC or GND
6.0
0.1
1.0
1.0
A
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0
A
6.0
1.0
10
40
A
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor HighSpeed CMOS Data Book
(DL129/D).
AC ELECTRICAL CHARACTERISTICS
(CL = 50 pF, Input t, = tf = 6 ns)
Guaranteed Limit
Symbol
Parameter
VCC
V
55 to
25
_
C
v
85
_
C
v
125
_
C
Unit
tPLH,
tPHL
Maximum Propagation Delay, Input A or B to Output Y
(Figures 1 and 2)
2.0
3.0
4.5
6.0
100
80
20
17
125
90
25
21
150
110
31
26
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
2.0
3.0
4.5
6.0
75
30
15
13
95
40
19
16
110
55
22
19
ns
Cin
Maximum Input Capacitance
--
10
10
10
pF
NOTES:
1. For propagation delays with loads other than 50 pF, see Chapter 2 of the ON Semiconductor HighSpeed CMOS Data Book (DL129/D).
2. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor HighSpeed CMOS Data Book (DL129/D).
Typical @ 25
C, VCC = 5.0 V
CPD
Power Dissipation Capacitance (Per Gate)*
33
pF
* Used to determine the noload dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the
ON Semiconductor HighSpeed CMOS Data Book (DL129/D).
MC74HC86A
http://onsemi.com
4
*Includes all probe and jig capacitance
CL*
TEST POINT
DEVICE
UNDER
TEST
OUTPUT
Figure 1. Switching Waveforms
Figure 2. Test Circuit
OUTPUT Y
INPUT
A OR B
90%
50%
10%
tTLH
tTHL
tPLH
tPHL
tr
tf
GND
VCC
90%
50%
10%
A
B
Y
EXPANDED LOGIC DIAGRAM
(1/4 of Device)
MC74HC86A
http://onsemi.com
5
PACKAGE DIMENSIONS
PDIP14
N SUFFIX
CASE 64606
ISSUE L
NOTES:
1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE
POSITION AT SEATING PLANE AT MAXIMUM
MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
3. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.
4. ROUNDED CORNERS OPTIONAL.
1
7
14
8
B
A
F
H
G
D
K
C
N
L
J
M
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.715
0.770
18.16
19.56
B
0.240
0.260
6.10
6.60
C
0.145
0.185
3.69
4.69
D
0.015
0.021
0.38
0.53
F
0.040
0.070
1.02
1.78
G
0.100 BSC
2.54 BSC
H
0.052
0.095
1.32
2.41
J
0.008
0.015
0.20
0.38
K
0.115
0.135
2.92
3.43
L
0.300 BSC
7.62 BSC
M
0
10 0 10
N
0.015
0.039
0.39
1.01
_
_
_
_
SOIC14
D SUFFIX
CASE 751A03
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
A
B
G
P
7 PL
14
8
7
1
M
0.25 (0.010)
B
M
S
B
M
0.25 (0.010)
A
S
T
T
F
R
X 45
SEATING
PLANE
D
14 PL
K
C
J
M
_
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
8.55
8.75
0.337
0.344
B
3.80
4.00
0.150
0.157
C
1.35
1.75
0.054
0.068
D
0.35
0.49
0.014
0.019
F
0.40
1.25
0.016
0.049
G
1.27 BSC
0.050 BSC
J
0.19
0.25
0.008
0.009
K
0.10
0.25
0.004
0.009
M
0
7
0
7
P
5.80
6.20
0.228
0.244
R
0.25
0.50
0.010
0.019
_
_
_
_
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