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Электронный компонент: MC74HCT04ADR2

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Semiconductor Components Industries, LLC, 2000
March, 2000 Rev. 7
1
Publication Order Number:
MC74HCT04A/D
MC74HCT04A
Hex Inverter
With LSTTLCompatible Inputs
HighPerformance SiliconGate CMOS
The MC74HCT04A may be used as a level converter for interfacing
TTL or NMOS outputs to HighSpeed CMOS inputs.
The HCT04A is identical in pinout to the LS04.
Output Drive Capability: 10 LSTTL Loads
TTL/NMOSCompatible Input Levels
Outputs Directly Interface to CMOS, NMOS and TTL
Operating Voltage Range: 4.5 to 5.5V
Low Input Current: 1
A
In Compliance With the JEDEC Standard No. 7A Requirements
Chip Complexity: 48 FETs or 12 Equivalent Gates
LOGIC DIAGRAM
Y1
A1
A2
A3
A4
A5
A6
Y2
Y3
Y4
Y5
Y6
1
3
5
9
11
13
2
4
6
8
10
12
Y = A
Pin 14 = VCC
Pin 7 = GND
Pinout: 14Lead Packages (Top View)
13
14
12
11
10
9
8
2
1
3
4
5
6
7
VCC
A6
Y6
A5
Y5
A4
Y4
A1
Y1
A2
Y2
A3
Y3
GND
Device
Package
Shipping
ORDERING INFORMATION
MC74HCT04AN
PDIP14
2000 / Box
MC74HCT04AD
SOIC14
http://onsemi.com
55 / Rail
MC74HCT04ADR2
SOIC14
2500 / Reel
MARKING
DIAGRAMS
A
= Assembly Location
WL or L
= Wafer Lot
YY or Y
= Year
WW or W = Work Week
MC74HCT04ADT
TSSOP14
96 / Rail
MC74HCT04ADTR2
TSSOP14
2500 / Reel
TSSOP14
DT SUFFIX
CASE 948G
HCT
04A
ALYW
1
14
1
14
PDIP14
N SUFFIX
CASE 646
MC74HCT04AN
AWLYYWW
SOIC14
D SUFFIX
CASE 751A
1
14
HCT04A
AWLYWW
L
H
FUNCTION TABLE
Inputs
Outputs
A
H
L
Y
MC74HCT04A
http://onsemi.com
2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage (Referenced to GND)
0.5 to + 7.0
V
Vin
DC Input Voltage (Referenced to GND)
0.5 to VCC + 0.5
V
Vout
DC Output Voltage (Referenced to GND)
0.5 to VCC + 0.5
V
Iin
DC Input Current, per Pin
20
mA
Iout
DC Output Current, per Pin
25
mA
ICC
DC Supply Current, VCC and GND Pins
50
mA
PD
Power Dissipation in Still Air
Plastic DIP
SOIC Package
TSSOP Package
750
500
450
mW
Tstg
Storage Temperature Range
65 to + 150
_
C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
Plastic DIP, SOIC or TSSOP Package
260
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions.
Derating -- Plastic DIP: 10 mW/
_
C from 65
_
to 125
_
C
SOIC Package: 7 mW/
_
C from 65
_
to 125
_
C
TSSOP Package: 6.1 mW/
_
C from 65
_
to 125
_
C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor HighSpeed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage (Referenced to GND)
4.5
5.5
V
Vin, Vout
DC Input Voltage, Output Voltage (Referenced to GND)
0
VCC
V
TA
Operating Temperature Range, All Package Types
55
+ 125
_
C
tr, tf
Input Rise/Fall Time (Figure 1)
0
500
ns
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highimpedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND
v
(Vin or Vout)
v
VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
MC74HCT04A
http://onsemi.com
3
DC CHARACTERISTICS
(Voltages Referenced to GND)
VCC
Guaranteed Limit
Symbol
Parameter
Condition
VCC
V
55 to 25
C
85
C
125
C
Unit
VIH
Minimum HighLevel Input
Voltage
Vout = 0.1V
|Iout|
20
A
4.5
5.5
2.0
2.0
2.0
2.0
2.0
2.0
V
VIL
Maximum LowLevel Input
Voltage
Vout = VCC 0.1V
|Iout|
20
A
4.5
5.5
0.8
0.8
0.8
0.8
0.8
0.8
V
VOH
Minimum HighLevel Output
Voltage
Vin = VIL
|Iout|
20
A
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
V
Vin = VIL
|Iout|
4.0mA
4.5
3.98
3.84
3.70
VOL
Maximum LowLevel Output
Voltage
Vin = VIH
|Iout|
20
A
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin = VIH
|Iout|
4.0mA
4.5
0.26
0.33
0.40
Iin
Maximum Input Leakage
Current
Vin = VCC or GND
5.5
0.1
1.0
1.0
A
ICC
Maximum Quiescent Supply
Current (per Package)
Vin = VCC or GND
Iout = 0
A
5.5
1
10
40
A
ICC
Additional Quiescent Supply
Current
Vin = 2.4V, Any One Input
Vi
VCC or GND Other Inputs
55
C
25 to 125
C
Current
Vin = VCC or GND, Other Inputs
Iout = 0
A
5.5
2.9
2.4
mA
1. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor HighSpeed CMOS Data Book (DL129/D).
2. Total Supply Current = ICC +
ICC.
AC CHARACTERISTICS
(VCC = 5.0V
10%, CL = 50pF, Input tr = tf = 6ns)
Guaranteed Limit
Symbol
Parameter
55 to 25
C
85
C
125
C
Unit
tPLH,
tPHL
Maximum Propagation Delay, Input A to Output Y
(Figures 1 and 2)
15
17
19
21
22
26
ns
tTLH,
tTHL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
15
19
22
ns
Cin
Maximum Input Capacitance
10
10
10
pF
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor HighSpeed CMOS Data Book (DL129/D).
Typical @ 25
C, VCC = 5.0 V
CPD
Power Dissipation Capacitance (Per Inverter)*
22
pF
* Used to determine the noload dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the
ON Semiconductor HighSpeed CMOS Data Book (DL129/D).
MC74HCT04A
http://onsemi.com
4
Figure 1. Switching Waveforms
GND
3.0V
OUTPUT Y
INPUT A
CL*
*Includes all probe and jig capacitance
TEST
POINT
90%
1.3V
10%
tTLH
DEVICE
UNDER
TEST
OUTPUT
Figure 2. Test Circuit
Y
A
Figure 3. Expanded Logic Diagram
(1/6 of the Device Shown)
tTHL
2.7V
1.3V
0.3V
tPLH
tPHL
tf
tr
MC74HCT04A
http://onsemi.com
5
PACKAGE DIMENSIONS
PDIP14
N SUFFIX
CASE 64606
ISSUE L
NOTES:
1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE
POSITION AT SEATING PLANE AT MAXIMUM
MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
3. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.
4. ROUNDED CORNERS OPTIONAL.
1
7
14
8
B
A
F
H
G
D
K
C
N
L
J
M
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.715
0.770
18.16
19.56
B
0.240
0.260
6.10
6.60
C
0.145
0.185
3.69
4.69
D
0.015
0.021
0.38
0.53
F
0.040
0.070
1.02
1.78
G
0.100 BSC
2.54 BSC
H
0.052
0.095
1.32
2.41
J
0.008
0.015
0.20
0.38
K
0.115
0.135
2.92
3.43
L
0.300 BSC
7.62 BSC
M
0
10 0 10
N
0.015
0.039
0.39
1.01
_
_
_
_
SOIC14
D SUFFIX
CASE 751A03
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
A
B
G
P
7 PL
14
8
7
1
M
0.25 (0.010)
B
M
S
B
M
0.25 (0.010)
A
S
T
T
F
R
X 45
SEATING
PLANE
D
14 PL
K
C
J
M
_
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
8.55
8.75
0.337
0.344
B
3.80
4.00
0.150
0.157
C
1.35
1.75
0.054
0.068
D
0.35
0.49
0.014
0.019
F
0.40
1.25
0.016
0.049
G
1.27 BSC
0.050 BSC
J
0.19
0.25
0.008
0.009
K
0.10
0.25
0.004
0.009
M
0
7
0
7
P
5.80
6.20
0.228
0.244
R
0.25
0.50
0.010
0.019
_
_
_
_