Semiconductor Components Industries, LLC, 2000
March, 2000 Rev. 7
1
Publication Order Number:
MC74HCT14A/D
MC74HCT14A
HexSchmitt-Trigger
Inverter with LSTTL
Compatible Inputs
HighPerformance SiliconGate CMOS
The MC74HCT14A may be used as a level converter for interfacing
TTL or NMOS outputs to highspeed CMOS inputs.
The HCT14A is identical in pinout to the LS14.
The HCT14A is useful to "square up" slow input rise and fall times.
Due to the hysteresis voltage of the Schmitt trigger, the HCT14A finds
applications in noisy environments.
Output Drive Capability: 10 LSTTL Loads
TTL/NMOSCompatible Input Levels
Outputs Directly Interface to CMOS, NMOS and TTL
Operating Voltage Range: 4.5 to 5.5 V
Low Input Current: 1.0
A
In Compliance with the Requirements Defined by JEDEC Standard
No. 7A
Chip Complexity: 72 FETs or 18 Equivalent Gates
LOGIC DIAGRAM
PIN 14 = VCC
PIN 7 = GND
Y = A
A1
1
2
Y1
A2
3
4
Y2
A3
5
6
Y3
A4
9
8
Y4
A5
11
10
Y5
A6
13
12
Y6
FUNCTION TABLE
Input
A
L
H
Output
Y
H
L
Device
Package
Shipping
ORDERING INFORMATION
MC74HCT14AN
PDIP14
2000 / Box
MC74HCT14AD
SOIC14
http://onsemi.com
55 / Rail
MC74HCT14ADR2
SOIC14
2500 / Reel
MARKING
DIAGRAMS
A
= Assembly Location
WL or L
= Wafer Lot
YY or Y
= Year
WW or W = Work Week
1
14
PDIP14
N SUFFIX
CASE 646
MC74HCT14AN
AWLYYWW
SOIC14
D SUFFIX
CASE 751A
1
14
HCT14A
AWLYWW
PIN ASSIGNMENT
11
12
13
14
8
9
10
5
4
3
2
1
7
6
Y5
A5
Y6
A6
VCC
Y4
A4
Y2
A2
Y1
A1
GND
Y3
A3
MC74HCT14A
http://onsemi.com
2
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage (Referenced to GND)
0.5 to + 7.0
V
Vin
DC Input Voltage (Referenced to GND)
0.5 to VCC + 0.5
V
Vout
DC Output Voltage (Referenced to GND)
0.5 to VCC + 0.5
V
Iin
DC Input Current, per Pin
20
mA
Iout
DC Output Current, per Pin
25
mA
ICC
DC Supply Current, VCC and GND Pins
50
mA
PD
Power Dissipation in Still Air,
Plastic DIP
SOIC Package
750
500
mW
Tstg
Storage Temperature
65 to + 150
_
C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP or SOIC Package)
260
_
C
_
C
*Maximum Ratings are those values beyond which damage to the device may occur.
Functional operation should be restricted to the Recommended Operating Conditions
Derating -- Plastic DIP: 10 mW/
_
C from 65
_
to 125
_
C
SOIC Package: 7 mW/
_
C from 65
_
to 125
_
C
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor HighSpeed CMOS Data Book (DL129/D).
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage (Referenced to GND)
4.5
5.5
V
Vin, Vout
DC Input Voltage, Output Voltage (Referenced to GND)
0
VCC
V
TA
Operating Temperature, All Package Types
55
+ 125
_
C
tr, tf
Input Rise and Fall Time (Figure 1)
--
*
ns
*No Limit when Vin
[
50% VCC, ICC > 1 mA.
DC ELECTRICAL CHARACTERISTICS
(Voltages Referenced to GND)
Temperature Limit
VCC
55 to
25
_
C
v
85
_
C
v
125
_
C
Symbol
Parameter
Test Conditions
CC
Volts
Min
Max
Min
Max
Min
Max
Unit
VT+ max
Maximum PositiveGoing
Input Threshold Voltage
Vout = 0.1 V or VCC 0.1 V
|Iout|
v
20
A
4.5
5.5
1.9
2.1
1.9
2.1
1.9
2.1
V
VT+ min
Minimum PositiveGoing
Input Threshold Voltage
Vout = 0.1 V or VCC 0.1 V
|Iout|
v
20
A
4.5
5.5
1.2
1.4
1.2
1.4
1.2
1.4
V
VT max
Maximum PositiveGoing
Input Threshold Voltage
Vout = 0.1 V or VCC 0.1 V
|Iout|
v
20
A
4.5
5.5
1.2
1.4
1.2
1.4
1.2
1.4
VT min
Minimum PositiveGoing
Input Threshold Voltage
Vout = 0.1 V or VCC 0.1 V
|Iout|
v
20
A
4.5
5.5
0.5
0.6
0.5
0.6
0.5
0.6
VH max
Maximum Hysteresis
Voltage
Vout = 0.1 V or VCC 0.1 V
|Iout|
v
20
A
4.5
5.5
1.4
1.5
1.4
1.5
1.4
1.5
VH min
Minimum Hysteresis
Voltage
Vout = 0.1 V or VCC 0.1 V
|Iout|
v
20
A
4.5
5.5
0.4
0.4
0.4
0.4
0.4
0 4
VOH
Minimum HighLevel
Output Voltage
Vin < VTmin
|Iout|
v
20
A
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
V
Vin < VTmin
|Iout|
v
4.0 mA
4.5
3.98
3.84
3.7
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor HighSpeed CMOS Data Book (DL129/D).
(continued)
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highimpedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND
v
(Vin or Vout)
v
VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
MC74HCT14A
http://onsemi.com
3
DC CHARACTERISTICS
(Voltages Referenced to GND)
continued
Temperature Limit
VCC
55 to
25
_
C
v
85
_
C
v
125
_
C
Symbol
Parameter
Test Conditions
VCC
Volts
Min
Max
Min
Max
Min
Max
Unit
VOL
Maximum LowLevel
Output Voltage
Vin
VT+max
|Iout|
v
20
A
4.5
5.5
0.1
0.1
0.1
0.1
0.1
0.1
V
Vin
VT+max
|Iout|
v
4.0 mA
4.5
0.26
0.33
0.4
Iin
Maximum Input
Leakage Current
Vin = VCC or GND
5.5
0.1
1.0
1.0
A
ICC
Maximum Quiescent
Supply Current
(per package)
Vin = VCC or GND
Iout = 0
A
5.5
1.0
10
40
A
55
_
C
25
_
C to
125
_
C
ICC
Additional Quiescent
Supply Current
Vin = 2.4 V, Any One Input
Vin = VCC or GND, Other Inputs
lout = 0
A
5.5
2.9
2.4
mA
AC CHARACTERISTICS
(CL = 50 pF, Input tr = tf = 6.0 ns)
Guaranteed Limit
55 to
25
_
C
v
85
_
C
v
125
_
C
Symbol
Parameter
Test Conditions
Min
Max
Min
Max
Min
Max
Unit
tPLH,
tPHL
Maximum Propagation
Delay, Input A to Output Y
(L to H)
VCC = 5.0 V
10%
CL = 50 pF, Input tr = tf = 6.0 ns
Fig.
1 & 2
32
40
48
ns
tTLH,
tTHL
Maximum Output
Transition Time.
Any Output
VCC = 5.0 V
10%
CL = 50 pF, Input tr = tf = 6.0 ns
Fig.
1 & 2
15
19
22
ns
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON
Semiconductor HighSpeed CMOS Data Book (DL129/D).
Typical @ 25
C, VCC = 5.0 V
CPD
Power Dissipation Capacitance (Per Inverter)*
32
pF
* Used to determine the noload dynamic power consumption: PD = CPD VCC2f + ICC VCC. For load considerations, see Chapter 2 of the
ON Semiconductor HighSpeed CMOS Data Book (DL129/D).
*Includes all probe and jig capacitance
CL*
TEST POINT
DEVICE
UNDER
TEST
OUTPUT
Figure 1. Switching Waveforms
Figure 2. Test Circuit
INPUT A
OUTPUT Y
tf
tr
3 V
GND
tPHL
tPLH
tTLH
tTHL
2.7 V
1.3 V
0.3 V
90%
1.3 V
10%
MC74HCT14A
http://onsemi.com
4
PACKAGE DIMENSIONS
PDIP14
N SUFFIX
CASE 64606
ISSUE L
NOTES:
1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE
POSITION AT SEATING PLANE AT MAXIMUM
MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN
FORMED PARALLEL.
3. DIMENSION B DOES NOT INCLUDE MOLD
FLASH.
4. ROUNDED CORNERS OPTIONAL.
1
7
14
8
B
A
F
H
G
D
K
C
N
L
J
M
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.715
0.770
18.16
19.56
B
0.240
0.260
6.10
6.60
C
0.145
0.185
3.69
4.69
D
0.015
0.021
0.38
0.53
F
0.040
0.070
1.02
1.78
G
0.100 BSC
2.54 BSC
H
0.052
0.095
1.32
2.41
J
0.008
0.015
0.20
0.38
K
0.115
0.135
2.92
3.43
L
0.300 BSC
7.62 BSC
M
0
10 0 10
N
0.015
0.039
0.39
1.01
_
_
_
_
SOIC14
D SUFFIX
CASE 751A03
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
A
B
G
P
7 PL
14
8
7
1
M
0.25 (0.010)
B
M
S
B
M
0.25 (0.010)
A
S
T
T
F
R
X 45
SEATING
PLANE
D
14 PL
K
C
J
M
_
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
8.55
8.75
0.337
0.344
B
3.80
4.00
0.150
0.157
C
1.35
1.75
0.054
0.068
D
0.35
0.49
0.014
0.019
F
0.40
1.25
0.016
0.049
G
1.27 BSC
0.050 BSC
J
0.19
0.25
0.008
0.009
K
0.10
0.25
0.004
0.009
M
0
7
0
7
P
5.80
6.20
0.228
0.244
R
0.25
0.50
0.010
0.019
_
_
_
_
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