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Электронный компонент: MC74LVX02DR2

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Quad 2-Input NOR Gate
With 5VTolerant Inputs
The MC74LVX02 is an advanced high speed CMOS 2input NOR
gate. The inputs tolerate voltages up to 7V, allowing the interface of
5V systems to 3V systems.
High Speed: t
PD
= 4.5ns (Typ) at V
CC
= 3.3V
Low Power Dissipation: I
CC
= 2
A (Max) at T
A
= 25
C
Power Down Protection Provided on Inputs
Balanced Propagation Delays
Low Noise: V
OLP
= 0.5V (Max)
Pin and Function Compatible with Other Standard Logic Families
Latchup Performance Exceeds 300mA
ESD Performance: HBM > 2000V; Machine Model > 200V
LVX
MC74LVX02
LOWVOLTAGE CMOS
D SUFFIX
14LEAD SOIC PACKAGE
CASE 751A03
DT SUFFIX
14LEAD TSSOP PACKAGE
CASE 948G01
M SUFFIX
14LEAD SOIC EIAJ PACKAGE
CASE 96501
PIN NAMES
Function
Data Inputs
Outputs
Pins
An, Bn
On
Semiconductor Components Industries, LLC, 2001
February, 2001 Rev. 1
1
Publication Order Number:
MC74LVX02/D
MC74LVX02
http://onsemi.com
2
Figure 1. Figure 1. 14Lead Pinout (Top View)
Figure 2. Figure 2. Logic Diagram
13
14
12
11
10
9
8
2
1
3
4
5
6
7
V
CC
O2
B2
A2
O3
B3
A3
O0
A0
B0
O1
A1
B1
GND
1
O0
2
A0
3
B0
4
O1
5
A1
6
B1
13
O2
11
A2
12
B2
10
O3
8
A3
9
B3
L
L
H
H
L
H
L
H
INPUTS
OUTPUTS
An
Bn
H
L
L
L
On
FUNCTION TABLE
MC74LVX02
http://onsemi.com
3
MAXIMUM RATINGS*
Symbol
Parameter
Value
Unit
V
CC
DC Supply Voltage
0.5 to +7.0
V
V
in
DC Input Voltage
0.5 to +7.0
V
V
out
DC Output Voltage
0.5 to V
CC
+0.5
V
I
IK
Input Diode Current
20
mA
I
OK
Output Diode Current
20
mA
I
out
DC Output Current, per Pin
25
mA
I
CC
DC Supply Current, V
CC
and GND Pins
50
mA
P
D
Power Dissipation
180
mW
T
stg
Storage Temperature
65 to +150
_
C
* Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Exposure to these conditions or
conditions beyond those indicated may adversely affect device reliability. Functional operation under absolutemaximumrated conditions
is not implied.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
DC Supply Voltage
2.0
3.6
V
V
in
DC Input Voltage
0
5.5
V
V
out
DC Output Voltage
0
V
CC
V
T
A
Operating Temperature, All Package Types
40
+85
_
C
t/
V
Input Rise and Fall Time
0
100
ns/V
DC ELECTRICAL CHARACTERISTICS
V
CC
T
A
= 25
C
T
A
= 40 to 85
C
Symbol
Parameter
Test Conditions
V
CC
V
Min
Typ
Max
Min
Max
Unit
V
IH
HighLevel Input
Voltage
2.0
3.0
3.6
1.5
2.0
2.4
1.5
2.0
2.4
V
V
IL
LowLevel Input Voltage
2.0
3.0
3.6
0.5
0.8
0.8
0.5
0.8
0.8
V
V
OH
HighLevel Output
Voltage
(V
in
= V
IH
or V
IL
)
I
OH
= 50
A
I
OH
= 50
A
I
OH
= 4mA
2.0
3.0
3.0
1.9
2.9
2.58
2.0
3.0
1.9
2.9
2.48
V
V
OL
LowLevel Output
Voltage
(V
in
= V
IH
or V
IL
)
I
OL
= 50
A
I
OL
= 50
A
I
OL
= 4mA
2.0
3.0
3.0
0.0
0.0
0.1
0.1
0.36
0.1
0.1
0.44
V
I
in
Input Leakage Current
V
in
= 5.5V or GND
3.6
0.1
1.0
A
I
CC
Quiescent Supply
Current
V
in
= V
CC
or GND
3.6
2.0
20.0
A
MC74LVX02
http://onsemi.com
4
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 3.0ns)
T
A
= 25
C
T
A
= 40 to 85
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Min
Max
Unit
t
PLH
,
t
PHL
Propagation Delay, Input to
Output
V
CC
= 2.7V
C
L
= 15pF
C
L
= 50pF
5.9
8.4
10.7
14.2
1.0
1.0
13.5
17.0
ns
V
CC
= 3.3
0.3V
C
L
= 15pF
C
L
= 50pF
4.5
7.0
6.6
10.1
1.0
1.0
8.0
11.5
t
OSHL
t
OSLH
OutputtoOutput Skew
(Note NO TAG)
V
CC
= 2.7V
C
L
= 50pF
V
CC
= 3.3
0.3V
C
L
= 50pF
1.5
1.5
1.5
1.5
ns
1. Skew is defined as the absolute value of the difference between the actual propagation delay for any two separate outputs of the same device.
The specification applies to any outputs switching in the same direction, either HIGHtoLOW (t
OSHL
) or LOWtoHIGH (t
OSLH
); parameter
guaranteed by design.
CAPACITIVE CHARACTERISTICS
T
A
= 25
C
T
A
= 40 to 85
C
Symbol
Parameter
Min
Typ
Max
Min
Max
Unit
C
in
Input Capacitance
4
10
10
pF
C
PD
Power Dissipation Capacitance (Note NO TAG)
15
pF
2. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
/4 (per gate). C
PD
is used to determine the noload
dynamic power consumption; P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC
.
NOISE CHARACTERISTICS
(Input t
r
= t
f
= 3.0ns, C
L
= 50pF, V
CC
= 3.3V, Measured in SOIC Package)
T
A
= 25
C
Symbol
Characteristic
Typ
Max
Unit
V
OLP
Quiet Output Maximum Dynamic V
OL
0.3
0.5
V
V
OLV
Quiet Output Minimum Dynamic V
OL
0.3
0.5
V
V
IHD
Minimum High Level Dynamic Input Voltage
2.0
V
V
ILD
Maximum Low Level Dynamic Input Voltage
0.8
V
Figure 3. Switching Waveforms
V
CC
GND
50%
50% V
CC
A or B
O
t
PHL
t
PLH
*Includes all probe and jig capacitance
Figure 4. Test Circuit
C
L
*
TEST POINT
DEVICE
UNDER
TEST
OUTPUT
MC74LVX02
http://onsemi.com
5
OUTLINE DIMENSIONS
D SUFFIX
PLASTIC SOIC PACKAGE
CASE 751A03
ISSUE F
MIN
MIN
MAX
MAX
MILLIMETERS
INCHES
DIM
A
B
C
D
F
G
J
K
M
P
R
8.55
3.80
1.35
0.35
0.40
0.19
0.10
0
5.80
0.25
8.75
4.00
1.75
0.49
1.25
0.25
0.25
7
6.20
0.50
0.337
0.150
0.054
0.014
0.016
0.008
0.004
0
0.228
0.010
0.344
0.157
0.068
0.019
0.049
0.009
0.009
7
0.244
0.019
1.27 BSC
0.050 BSC
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
A
B
P
7 PL
G
C
K
SEATING
PLANE
D
14 PL
M
J
R
X 45
1
7
8
14
0.25 (0.010)
T B
A
M
S
S
B
0.25 (0.010)
M
M
F