1
Motorola Bipolar Power Transistor Device Data
Plastic Medium Power PNP
Silicon Transistor
. . . designed for use in lineoperated applications such as low power, lineoperated
series pass and switching regulators requiring PNP capability.
High CollectorEmitter Sustaining Voltage --
VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc
Excellent DC Current Gain --
hFE = 30240 @ IC = 50 mAdc
Plastic Thermopad Package
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
VCEO
300
Vdc
EmitterBase Voltage
VEB
3.0
Vdc
Collector Current -- Continuous
IC
500
mAdc
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
20
0.16
Watts
W/
_
C
Operating and Storage Junction Temperature Range
TJ, Tstg
65 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
JC
6.25
_
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(IC = 1.0 mAdc, IB = 0)
VCEO(sus)
300
--
Vdc
Collector Cutoff Current
(VCB = 300 Vdc, IE = 0)
ICBO
--
100
Adc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
--
100
Adc
ON CHARACTERISTICS
DC Current Gain
(IC = 50 mAdc, VCE = 10 Vdc)
hFE
30
240
--
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJE350/D
Motorola, Inc. 1995
MJE350
0.5 AMPERE
POWER TRANSISTOR
PNP SILICON
300 VOLTS
20 WATTS
CASE 7708
TO225AA TYPE
REV 7
MJE350
2
Motorola Bipolar Power Transistor Device Data
V
,
TEMPERA
TURE COEFFICIENTS (mV/
C)
IC, COLLECTOR CURRENT (mA)
h
FE
, DC CURRENT
GAIN
200
7.0
20
5.0
50
30
10
10
50
100
30
25
C
TJ = 150
C
55
C
Figure 1. DC Current Gain
100
20
70
200
500
300
70
VCE = 2.0 V
VCC = 10 V
Figure 2. "On" Voltages
1.0
IC, COLLECTOR CURRENT (mA)
0.8
0.2
0
TJ = 25
C
V
, VOL
T
AGE (VOL
TS)
VBE(sat) @ IC/IB = 10
VBE @ VCE = 10 V
0.6
0.4
VCE(sat)
7.0
20
5.0
10
50
100
30
200
500
300
70
IC/IB = 10
IC/IB = 5.0
1000
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
70
300
10
50
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25
C
SECOND BREAKDOWN LIMITED
Figure 3. ActiveRegion Safe Operating Area
1.0 ms
dc
700
200
100
50
20
TJ = 150
C
I C
, COLLECT
OR CURRENT
(mA)
100
300
500
30
100
s
400
30
70
200
20
500
s
+ 1.2
IC, COLLECTOR CURRENT (mA)
70
Figure 4. Temperature Coefficients
50
30
10
5.0
500
7.0
20
+ 0.8
+ 0.4
0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
100
200 300
*APPLIES FOR IC/IB < hFE/4
*
VC for VCE(sat)
VB for VBE
+ 100
C to + 150
C
+ 25
C to + 100
C
55
C to + 25
C
+ 25
C to + 150
C
55
C to + 25
C
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 3 is based on TJ(pk) = 150
_
C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v
150
_
C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
20
TC, CASE TEMPERATURE (
C)
Figure 5. Power Derating
100
80
40
0
160
20
60
16
12
8.0
4.0
0
120
140
P
D
, POWER DISSIP
A
TION (W
A
TTS)
MJE350
3
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 7708
TO225AA TYPE
ISSUE V
STYLE 1:
PIN 1.
EMITTER
2.
COLLECTOR
3.
BASE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
B
A
M
K
F
C
Q
H
V
G
S
D
J
R
U
1
3
2
2 PL
M
A
M
0.25 (0.010)
B
M
M
A
M
0.25 (0.010)
B
M
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.425
0.435
10.80
11.04
B
0.295
0.305
7.50
7.74
C
0.095
0.105
2.42
2.66
D
0.020
0.026
0.51
0.66
F
0.115
0.130
2.93
3.30
G
0.094 BSC
2.39 BSC
H
0.050
0.095
1.27
2.41
J
0.015
0.025
0.39
0.63
K
0.575
0.655
14.61
16.63
M
5 TYP
5 TYP
Q
0.148
0.158
3.76
4.01
R
0.045
0.055
1.15
1.39
S
0.025
0.035
0.64
0.88
U
0.145
0.155
3.69
3.93
V
0.040
1.02
_
_
MJE350
4
Motorola Bipolar Power Transistor Device Data
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MJE350/D
*MJE350/D*
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