ChipFind - документация

Электронный компонент: MMT10B260T3

Скачать:  PDF   ZIP
Semiconductor Components Industries, LLC, 2004
March, 2004 - Rev. 7
1
Publication Order Number:
MMT10B230T3/D
MMT10B230T3,
MMT10B260T3,
MMT10B310T3
Preferred Device
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover-triggered crowbar
protectors. Turn-off occurs when the surge current falls below the
holding current value.
Secondary protection applications for electronic telecom equipment
at customer premises.
Outstanding High Surge Current Capability: 100 Amps 10x1000
sec
Guaranteed at the extended temp range of -20
C to 65
C
The MMT10B230T3 Series is used to help equipment meet various
regulatory requirements including: Bellcore 1089, ITU K.20 & K.21,
IEC 950, UL 1459 & 1950 and FCC Part 68.
Bidirectional Protection in a Single Device
Little Change of Voltage Limit with Transient Amplitude or Rate
Freedom from Wearout Mechanisms Present in Non-Semiconductor
Devices
Fail-Safe, Shorts When Overstressed, Preventing Continued
Unprotected Operation.
Surface Mount Technology (SMT)
Complies with GR1089 Second Level Surge Spec at 500 Amps
2x10
sec Waveforms
Indicates UL Registered - File #E210057
Device Marking: MMT10B230T3: RPDF; MMT10B260T3: RPDG;
MMT10B310T3: RPDJ, and Date Code
MAXIMUM RATINGS
(T
J
= 25
C unless otherwise noted)
Rating
Symbol
Value
Unit
Off-State Voltage - Maximum
MMT10B230T3
MMT10B260T3
MMT10B310T3
V
DM
"
170
"
200
"
270
Volts
Maximum Pulse Surge Short Circuit
Current Non-Repetitive
Double Exponential Decay Waveform
(Notes 1. and 2.) (-20
C to +65
C)
2 x 10
sec
10 x 700
sec
10 x 1000
sec
I
PPS1
I
PPS2
I
PPS3
"
500
"
180
"
100
A(pk)
Maximum Non-Repetitive Rate of
Change of On-State Current
Double Exponential Waveform,
R = 2.0, L = 1.5
H, C = 1.67
F,
I
pk
= 110A
di/dt
"
100
A/
s
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
BIDIRECTIONAL TSPD
100 AMP SURGE
265 thru 365 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
Device
Package
Shipping
ORDERING INFORMATION
MMT10B230T3
SMB
12mm Tape and Reel
(2.5K/Reel)
MMT10B260T3
SMB
12mm Tape and Reel
(2.5K/Reel)
MMT10B310T3
SMB
12mm Tape and Reel
(2.5K/Reel)
MT1
MT2
SMB
(No Polarity)
(Essentially JEDEC DO-214AA)
CASE 403C
(
)
RPDx
= Specific Device Code
x
= F, G or J
Y
= Year
WW
= Work Week
MARKING DIAGRAMS
YWW
RPDx
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
MMT10B230T3, MMT10B260T3, MMT10B310T3
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Operating Temperature Range
Blocking or Conducting State
T
J1
- 40 to + 125
C
Overload Junction Temperature - Maximum Conducting State Only
T
J2
+ 175
C
Instantaneous Peak Power Dissipation (I
pk
= 100 A, 10x1000
sec @ 25
C)
P
PK
4000
W
Maximum Lead Temperature for Soldering Purposes 1/8
from Case for 10 Seconds
T
L
260
C
ELECTRICAL CHARACTERISTICS
(T
J
= 25
C unless otherwise noted)
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Characteristic
Symbol
Min
Typ
Max
Unit
Breakover Voltage (Both polarities)
(dv/dt = 100 V/
s, I
SC
= 1.0 A, Vdc = 1000 V)
MMT10B230T3
MMT10B260T3
MMT10B310T3
(+65
C)
MMT10B230T3
MMT10B260T3
MMT10B310T3
V
(BO)
-
-
-
-
-
-
-
-
-
-
-
-
265
320
365
290
340
400
Volts
Breakover Voltage (Both polarities)
(f = 60 Hz, I
SC
= 1.0 A(rms), V
OC
= 1000 V(rms),
MMT10B230T3
R
I
= 1.0 k
, t = 0.5 cycle) (Note 3.)
MMT10B260T3
MMT10B310T3
(+65
C)
MMT10B230T3
MMT10B260T3
MMT10B310T3
V
(BO)
-
-
-
-
-
-
-
-
-
-
-
-
265
320
365
290
340
400
Volts
Breakover Voltage Temperature Coefficient
dV
(BO)
/dT
J
-
0.08
-
%/
C
Breakdown Voltage (I
(BR)
= 1.0 mA) Both polarities
MMT10B230T3
MMT10B260T3
MMT10B310T3
V
(BR)
-
-
-
190
240
280
-
-
-
Volts
Off State Current (V
D1
= 50 V) Both polarities
Off State Current
(V
D2
= V
DM
) Both polarities
I
D1
I
D2
-
-
-
-
2.0
5.0
A
On-State Voltage (I
T
= 1.0 A)
(PW
300
s, Duty Cycle
2%) (Note 3.)
V
T
-
1.53
5.0
Volts
Breakover Current (f = 60 Hz, V
DM
= 1000 V(rms), R
S
= 1.0 k
)
Both polarities
I
BO
-
260
-
mA
Holding Current (Both polarities)
(Note 3.)
V
S
= 500 Volts; I
T
(Initiating Current) =
"
1.0 A
I
H
150
270
-
mA
Critical Rate of Rise of Off-State Voltage
(Linear waveform, V
D
= Rated V
BR
, T
J
= 25
C)
dv/dt
2000
-
-
V/
s
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance
(f = 1.0 MHz, 2.0 Vdc, 15 mV rms Signal)
C
O
-
-
65
160
-
200
pF
3. Measured under pulse conditions to reduce heating.
MMT10B230T3, MMT10B260T3, MMT10B310T3
http://onsemi.com
3
+ Current
+ Voltage
V
TM
V
(BO)
I
(BO)
I
D2
I
D1
V
D1
V
D2
V
(BR)
I
H
Symbol
Parameter
I
D1
, I
D2
Off State Leakage Current
V
D1
, V
D2
Off State Blocking Voltage
V
BR
Breakdown Voltage
V
BO
Breakover Voltage
I
BO
Breakover Current
I
H
Holding Current
V
TM
On State Voltage
Voltage Current Characteristic of TSPD
(Bidirectional Device)
MMT10B230T3, MMT10B260T3, MMT10B310T3
http://onsemi.com
4
Figure 1. Off-State Current versus Temperature
TEMPERATURE (
C)
140
120
100
80
60
40
20
0
100
10
1
0.1
0.01
I D1
, OFF-ST
A
TE CURRENT
(
A)
Figure 2. Breakdown Voltage versus Temperature
TEMPERATURE (
C)
V
BR
, BREAKDOWN VOL
T
AGE (VOL
TS)
Figure 3. Breakover Voltage versus Temperature
Figure 4. Holding Current versus Temperature
TEMPERATURE (
C)
1000
100
50
0
- 50
125
V
D1
= 50V
100
200
300
400
500
600
700
800
900
I H
, HOLDING CURRENT
(mA)
V
BO
, BREAKOVER VOL
T
AGE (VOL
TS)
100
50
0
- 50
125
340
320
300
280
260
240
220
200
180
160
MMT10B230T3
MMT10B260T3
MMT10B310T3
TEMPERATURE (
C)
100
50
0
- 50
125
360
340
320
300
280
260
240
220
200
180
MMT10B230T3
MMT10B260T3
MMT10B310T3
Figure 5. Exponential Decay Pulse Waveform
TIME (ms)
0
50
0
Ipp - PEAK PULSE CURRENT
- %Ipp
100
t
r
= rise time to peak value
t
f
= decay time to half value
t
r
t
f
Peak
Value
Half Value
- 25
25
75
- 25
25
75
- 25
25
75
TIME (sec)
100
10
0.1
0.01
100
10
1
CURRENT
(A)
Figure 6. Peak Surge On-State Current versus
Surge Current Duration, Sinusoidal Waveform
1
MMT10B230T3, MMT10B260T3, MMT10B310T3
http://onsemi.com
5
TELECOM
EQUIPMENT
OUTSIDE
PLANT
TIP
RING
GND
TELECOM
EQUIPMENT
OUTSIDE
PLANT
TIP
RING
GND
TELECOM
EQUIPMENT
OUTSIDE
PLANT
TIP
RING
GND
PPTC*
PPTC*
HEAT COIL
HEAT COIL
*Polymeric PTC (positive temperature coefficient) overcurrent protection device