Darlington Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
CollectorEmitter Voltage
V
CES
30
Vdc
CollectorBase Voltage
V
CBO
30
Vdc
EmitterBase Voltage
V
EBO
10
Vdc
Collector Current -- Continuous
I
C
500
mAdc
Total Device Dissipation @ T
A
= 25
C
Derate above 25
C
P
D
625
5.0
mW
mW/
C
Total Device Dissipation @ T
C
= 25
C
Derate above 25
C
P
D
1.5
12
Watts
mW/
C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
55 to +150
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
q
JA
200
C/W
Thermal Resistance, Junction to Case
R
q
JC
83.3
C/W
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(I
C
= 100
Adc, I
B
= 0)
V
(BR)CES
30
--
Vdc
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
I
CBO
--
100
nAdc
Emitter Cutoff Current
(V
EB
= 10 Vdc, I
C
= 0)
I
EBO
--
100
nAdc
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
Semiconductor Components Industries, LLC, 2001
March, 2001 Rev. 1
1
Publication Order Number:
MPSA13/D
MPSA13
MPSA14
*ON Semiconductor Preferred Device
CASE 2904, STYLE 1
TO92 (TO226AA)
*
1
2
3
COLLECTOR 3
BASE
2
EMITTER 1
MPSA13 MPSA14
http://onsemi.com
4
SMALLSIGNAL CHARACTERISTICS
Figure 6. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
5.0
7.0
10
20
3.0
Figure 7. High Frequency Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
I
B
, BASE CURRENT (
A)
2.0
200 k
5.0
0.04
4.0
2.0
1.0
0.8
0.6
0.4
0.2
T
J
= 25
C
C, CAP
ACIT
ANCE (pF)
1.5
2.0
2.5
3.0
1.0
0.5
|h
fe
|, SMALL-SIGNAL
CURRENT
GAIN
h FE
, DC CURRENT
GAIN
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
0.1
0.2
0.4
1.0 2.0
4.0
10
20
40
C
ibo
C
obo
0.5
1.0
2.0
0.5
10
20
50
100 200
500
V
CE
= 5.0 V
f = 100 MHz
T
J
= 25
C
100 k
70 k
50 k
30 k
20 k
10 k
7.0 k
5.0 k
3.0 k
2.0 k
7.0 10
20
30
50 70 100
200 300
500
T
J
= 125
C
25
C
-55
C
V
CE
= 5.0 V
0.1 0.2 0.5 1.0 2.0
5.0 10 20 50 100 200 500 1000
T
J
= 25
C
I
C
= 10 mA 50 mA
250 mA 500 mA
Figure 10. "On" Voltages
I
C
, COLLECTOR CURRENT (mA)
Figure 11. Temperature Coefficients
I
C
, COLLECTOR CURRENT (mA)
1.6
5.0
-1.0
V
,
VOL
T
AGE (VOL
TS)
1.4
1.2
1.0
0.8
0.6
7.0
10
20 30
50 70 100 200 300
500
V
BE(sat)
@ I
C
/I
B
= 1000
R
V,
TEMPERA
TURE COEFFICIENTS (mV/
C)
T
J
= 25
C
V
BE(on)
@ V
CE
= 5.0 V
V
CE(sat)
@ I
C
/I
B
= 1000
-2.0
-3.0
-4.0
-5.0
-6.0
5.0 7.0 10
20 30
50 70 100
200 300
500
25
C TO 125
C
-55
C TO 25
C
*R
qVC
FOR V
CE(sat)
q
VB
FOR V
BE
25
C TO 125
C
-55
C TO 25
C
*APPLIES FOR I
C
/I
B
h
FE
/3.0
MPSA13 MPSA14
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6
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
H
SECTION XX
C
V
D
N
N
X X
SEATING
PLANE
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.175
0.205
4.45
5.20
B
0.170
0.210
4.32
5.33
C
0.125
0.165
3.18
4.19
D
0.016
0.022
0.41
0.55
F
0.016
0.019
0.41
0.48
G
0.045
0.055
1.15
1.39
H
0.095
0.105
2.42
2.66
J
0.015
0.020
0.39
0.50
K
0.500
---
12.70
---
L
0.250
---
6.35
---
N
0.080
0.105
2.04
2.66
P
---
0.100
---
2.54
R
0.115
---
2.93
---
V
0.135
---
3.43
---
1
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
CASE 02904
(TO226AA)
ISSUE AD
MPSA13 MPSA14
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8
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