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Электронный компонент: MUN5116DW1T1

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Semiconductor Components Industries, LLC, 2003
December, 2003 - Rev. 5
1
Publication Order Number:
MUN5111DW1T1/D
MUN5111DW1T1 Series
Preferred Devices
Dual Bias Resistor
Transistors
PNP Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base-emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the MUN5111DW1T1 series,
two BRT devices are housed in the SOT-363 package which is ideal
for low-power surface mount applications where board space is at a
premium.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel
MAXIMUM RATINGS
(T
A
= 25
C unless otherwise noted, common for Q
1
and Q
2
)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
- 50
Vdc
Collector-Emitter Voltage
V
CEO
-50
Vdc
Collector Current
I
C
-100
mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
C
Derate above 25
C
P
D
187 (Note 1.)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
mW
mW/
C
Thermal Resistance -
Junction-to-Ambient
R
JA
670 (Note 1.)
490 (Note 2.)
C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
C
Derate above 25
C
P
D
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
mW
mW/
C
Thermal Resistance -
Junction-to-Ambient
R
JA
493 (Note 1.)
325 (Note 2.)
C/W
Thermal Resistance -
Junction-to-Lead
R
JL
188 (Note 1.)
208 (Note 2.)
C/W
Junction and Storage
Temperature Range
T
J
, T
stg
- 55 to +150
C
1. FR-4 @ Minimum Pad
2. FR-4 @ 1.0 x 1.0 inch Pad
Preferred devices are recommended choices for future use
and best overall value.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Q
1
R
1
R
2
R
2
R
1
Q
2
(1)
(2)
(3)
(4)
(5)
(6)
http://onsemi.com
SOT-363
CASE 419B
STYLE 1
MARKING DIAGRAM
1
6
XX
d
XX = Specific Device Code
d
= Date Code
=
(See Page 2)
1
6
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MUN5111DW1T1 Series
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2
DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
R1 (K)
R2 (K)
Shipping
MUN5111DW1T1
SOT-363
0A
10
10
3000/Tape & Reel
MUN5112DW1T1
SOT-363
0B
22
22
3000/Tape & Reel
MUN5113DW1T1
SOT-363
0C
47
47
3000/Tape & Reel
MUN5114DW1T1
SOT-363
0D
10
47
3000/Tape & Reel
MUN5115DW1T1
SOT-363
0E
10
3000/Tape & Reel
MUN5116DW1T1
SOT-363
0F
4.7
3000/Tape & Reel
MUN5130DW1T1
SOT-363
0G
1.0
1.0
3000/Tape & Reel
MUN5131DW1T1
SOT-363
0H
2.2
2.2
3000/Tape & Reel
MUN5132DW1T1
SOT-363
0J
4.7
4.7
3000/Tape & Reel
MUN5133DW1T1
SOT-363
0K
4.7
47
3000/Tape & Reel
MUN5134DW1T1
SOT-363
0L
22
47
3000/Tape & Reel
MUN5135DW1T1
SOT-363
0M
2.2
47
3000/Tape & Reel
MUN5136DW1T1
SOT-363
0N
100
100
3000/Tape & Reel
MUN5137DW1T1
SOT-363
0P
47
22
3000/Tape & Reel
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted, common for Q
1
and Q
2
)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= -50 V, I
E
= 0)
I
CBO
-
-
-100
nAdc
Collector-Emitter Cutoff Current (V
CE
= -50 V, I
B
= 0)
I
CEO
-
-
-500
nAdc
Emitter-Base Cutoff Current
MUN5111DW1T1
(V
EB
= -6.0 V, I
C
= 0)
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5136DW1T1
MUN5137DW1T1
I
EBO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-0.5
-0.2
-0.1
-0.2
-0.9
-1.9
-4.3
-2.3
-1.5
-0.18
-0.13
-0.2
-0.05
-0.13
mAdc
Collector-Base Breakdown Voltage (I
C
= -10
A, I
E
= 0)
V
(BR)CBO
-50
-
-
Vdc
Collector-Emitter Breakdown Voltage (Note 3.) (I
C
= -2.0 mA, I
B
= 0)
V
(BR)CEO
-50
-
-
Vdc
ON CHARACTERISTICS
(Note 3.)
Collector-Emitter Saturation Voltage (I
C
= -10 mA, I
E
= -0.3 mA)
(I
C
= -10 mA, I
B
= -5 mA) MUN5130DW1T1/MUN5131DW1T1
(I
C
= -10 mA, I
B
= -1 mA) MUN5115DW1T1/MUN5116DW1T1
MUN5132DW1T1/MUN5133DW1T1/MUN5134DW1T1
V
CE(sat)
-
-
-0.25
Vdc
3. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
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3
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted, common for Q
1
and Q
2
) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(Note 4.) (Continued)
DC Current Gain
MUN5111DW1T1
(V
CE
= -10 V, I
C
= -5.0 mA)
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5136DW1T1
MUN5137DW1T1
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
250
250
5.0
15
27
140
130
140
130
140
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Output Voltage (on)
(V
CC
= -5.0 V, V
B
= -2.5 V, R
L
= 1.0 k
)
MUN5111DW1T1
MUN5112DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
(V
CC
= -5.0 V, V
B
= -3.5 V, R
L
= 1.0 k
)
MUN5113DW1T1
(V
CC
= -5.0 V, V
B
= -5.5 V, R
L
= 1.0 k
)
MUN5136DW1T1
(V
CC
= -5.0 V, V
B
= -4.0 V, R
L
= 1.0 k
)
MUN5137DW1T1
V
OL
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
Vdc
Output Voltage (off) (V
CC
= -5.0 V, V
B
= -0.5 V, R
L
= 1.0 k
)
(V
CC
= -5.0 V, V
B
= -0.05 V, R
L
= 1.0 k
) MUN5130DW1T1
(V
CC
= -5.0 V, V
B
= - 0.25 V, R
L
= 1.0 k
) MUN5115DW1T1
MUN5116DW1T1
MUN5131DW1T1
MUN5133DW1T1
V
OH
-4.9
-
-
Vdc
Input Resistor
MUN5111DW1T1
MUN5112DW1T1
MUN5113DW1T1
MUN5114DW1T1
MUN5115DW1T1
MUN5116DW1T1
MUN5130DW1T1
MUN5131DW1T1
MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5136DW1T1
MUN5137DW1T1
R
1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
k
Resistor Ratio MUN5111DW1T1/MUN5112DW1T1/
MUN5113DW1T1/MUN5136DW1T1
MUN5114DW1T1
MUN5115DW1T1/MUN5116DW1T1
MUN5130DW1T1/MUN5131DW1T1/MUN5132DW1T1
MUN5133DW1T1
MUN5134DW1T1
MUN5135DW1T1
MUN5137DW1T1
R
1
/R
2
0.8
0.17
-
0.8
0.055
0.38
0.038
1.7
1.0
0.21
-
1.0
0.1
0.47
0.047
2.1
1.2
0.25
-
1.2
0.185
0.56
0.056
2.6
4. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
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MUN5111DW1T1 Series
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4
Figure 1. Derating Curve - ALL DEVICES
300
200
150
100
50
0
- 50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (
C)
R
JA
= 490
C/W
250
P
D
, POWER DISSIP
A
TION (mW)
ALL MUN5111DW1T1 SERIES DEVICES
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MUN5111DW1T1 Series
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5
TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5111DW1T1
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 2. V
CE(sat)
versus I
C
100
10
1
0.1
0.01
0.001
0
V
in
, INPUT VOLTAGE (VOLTS)
T
A
= -25
C
25
C
1
2
3
4
5
6
7
8
9
10
Figure 3. DC Current Gain
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
Figure 6. Input Voltage versus Output Current
0.01
20
I
C
, COLLECTOR CURRENT (mA)
V CE(sat)
, COLLECT
OR VOL
T
AGE (VOL
TS)
0.1
1
0
40
50
1000
1
10
100
I
C
, COLLECTOR CURRENT (mA)
T
A
= 75
C
-25
C
100
10
0
I
C
, COLLECTOR CURRENT (mA)
0.1
1
10
100
10
20
30
40
50
T
A
= -25
C
25
C
75
C
75
C
I
C
/I
B
= 10
50
0
10
20
30
40
4
3
1
2
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
0
T
A
= -25
C
25
C
75
C
25
C
V
CE
= 10 V
f = 1 MHz
l
E
= 0 V
T
A
= 25
C
V
O
= 5 V
V
O
= 0.2 V
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MUN5111DW1T1 Series
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6
TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5112DW1T1
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 7. V
CE(sat)
versus I
C
Figure 8. DC Current Gain
1000
10
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
Figure 9. Output Capacitance
I
C
, COLLECTOR CURRENT (mA)
0
10
20
30
V
O
= 0.2 V
T
A
= -25
C
75
C
100
10
1
0.1
40
50
Figure 10. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001 0 1
2
3
4
V
in
, INPUT VOLTAGE (VOLTS)
5
6
7
8
9
10
Figure 11. Input Voltage versus Output Current
0.01
0.1
1
10
40
I
C
, COLLECTOR CURRENT (mA)
0
20
50
75
C
25
C
T
A
= -25
C
50
0
10
20
30
40
4
3
2
1
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
25
C
I
C
/I
B
= 10
25
C
-25
C
V
CE
= 10 V
T
A
= 75
C
f = 1 MHz
l
E
= 0 V
T
A
= 25
C
75
C
25
C
T
A
= -25
C
V
O
= 5 V
V CE(sat)
, COLLECT
OR VOL
T
AGE (VOL
TS)
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MUN5111DW1T1 Series
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7
TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5113DW1T1
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 12. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
1
0.1
0.01
0
10
20
30
40
75
C
25
C
Figure 13. DC Current Gain
1000
100
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
-25
C
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001
0
10
25
C
V
in
, INPUT VOLTAGE (VOLTS)
-25
C
50
0
10
20
30
40
1
0.8
0.6
0.4
0.2
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
1
2
3
4
5
6
7
8
9
Figure 16. Input Voltage versus Output Current
100
10
1
0.1
0
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
T
A
= -25
C
25
C
75
C
50
I
C
/I
B
= 10
T
A
= -25
C
25
C
T
A
= 75
C
f = 1 MHz
l
E
= 0 V
T
A
= 25
C
V
O
= 5 V
T
A
= 75
C
V
O
= 0.2 V
V CE(sat)
, COLLECT
OR VOL
T
AGE (VOL
TS)
V
CE
= 10 V
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8
TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5114DW1T1
10
1
0.1
0
10
20
30
40
50
100
10
1
0
2
4
6
8
10
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
2
4
6
8 10 15 20 25 30 35 40 45 50
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 17. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
0
20
40
60
80
Figure 18. DC Current Gain
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
Figure 21. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
-25
C
25
C
T
A
= 75
C
V
CE
= 10 V
180
160
140
120
100
80
60
40
20
0
2
4 6
8
15 20 40 50 60 70 80 90
f = 1 MHz
l
E
= 0 V
T
A
= 25
C
25
C
I
C
/I
B
= 10
T
A
= -25
C
T
A
= 75
C
25
C
-25
C
V
O
= 5 V
V
O
= 0.2 V
25
C
T
A
= -25
C
75
C
75
C
V CE(sat)
, COLLECT
OR VOL
T
AGE (VOL
TS)
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TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5115DW1T1
75
C
25
C
-25
C
Figure 22. V
CE(sat)
versus I
C
Figure 23. DC Current Gain
Figure 24. Output Capacitance
Figure 25. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 26. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
50
40
20
10
0
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
10
1
0.001
1000
V
CE(sat)
, COLLECT
OR VOL
T
AGE (VOL
TS)
h
FE
, DC CURRENT GAIN
6
45
50
40
30
20
10
0
0
C
ob
, CAP
ACIT
ANCE (pF)
2
4
8
100
6
5
4
3
2
1
0
0.001
1
10
I
C
, COLLECT
OR CURRENT (mA)
10
9
8
7
10
30
20
10
0
0.1
1
40
50
V
in
, INPUT VOL
T
AGE (VOL
TS)
75
C
25
C
T
A
= -25
C
75
C
25
C
T
A
= -25
C
75
C
25
C
T
A
= -25
C
0.01
35
25
15
5
0.01
0.1
30
10
12
I
C
/I
B
= 10
V
CE
= 10 V
f = 1 MHz
l
E
= 0 V
T
A
= 25
C
V
O
= 5 V
V
O
= 0.2 V
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TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5116DW1T1
75
C
25
C
-25
C
Figure 27. V
CE(sat)
versus I
C
Figure 28. DC Current Gain
Figure 29. Output Capacitance
Figure 30. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 31. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
50
40
20
10
0
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
10
1
0.001
1000
V
CE(sat)
, COLLECT
OR VOL
T
AGE (VOL
TS)
h
FE
, DC CURRENT GAIN
6
45
50
40
30
20
10
0
0
C
ob
, CAP
ACIT
ANCE (pF)
2
4
8
100
6
5
4
3
2
1
0
0.001
1
10
I
C
, COLLECT
OR CURRENT (mA)
10
9
8
7
10
30
20
10
0
0.1
1
40
50
V
in
, INPUT VOL
T
AGE (VOL
TS)
75
C
25
C
T
A
= -25
C
75
C
25
C
T
A
= -25
C
75
C
25
C
T
A
= -25
C
0.01
35
25
15
5
0.01
0.1
30
10
12
I
C
/I
B
= 10
V
CE
= 10 V
f = 1 MHz
l
E
= 0 V
T
A
= 25
C
V
O
= 5 V
V
O
= 0.2 V
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11
TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5130DW1T1
75
C
25
C
-25
C
Figure 32. V
CE(sat)
versus I
C
Figure 33. DC Current Gain
Figure 34. Output Capacitance
Figure 35. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 36. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
30
25
20
15
10
5
0
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
10
1
0.001
1000
V
CE(sat)
, COLLECT
OR VOL
T
AGE (VOL
TS)
h
FE
, DC CURRENT GAIN
C
ob
, CAP
ACIT
ANCE (pF)
100
6
5
4
3
2
1
0
0.001
1
10
I
C
, COLLECT
OR CURRENT (mA)
10
9
8
7
10
15
10
5
0
0.1
1
20
25
V
in
, INPUT VOL
T
AGE (VOL
TS)
75
C
25
C
T
A
= -25
C
75
C
25
C
T
A
= -25
C
75
C
25
C
T
A
= -25
C
0.01
0.01
0.1
TBD
I
C
/I
B
= 10
V
CE
= 10 V
V
O
= 5 V
V
O
= 0.2 V
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12
TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5131DW1T1
75
C
25
C
-25
C
Figure 37. V
CE(sat)
versus I
C
Figure 38. DC Current Gain
Figure 39. Output Capacitance
Figure 40. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 41. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
30
25
20
15
10
5
0
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
10
1
0.001
1000
V
CE(sat)
, COLLECT
OR VOL
T
AGE (VOL
TS)
h
FE
, DC CURRENT GAIN
12
6
45
50
40
30
20
10
0
0
C
ob
, CAP
ACIT
ANCE (pF)
2
4
8
10
100
6
5
4
3
2
1
0
0.001
1
10
I
C
, COLLECT
OR CURRENT (mA)
10
9
8
7
10
15
10
5
0
0.1
1
20
25
V
in
, INPUT VOL
T
AGE (VOL
TS)
75
C
25
C
T
A
= -25
C
75
C
25
C
T
A
= -25
C
75
C
25
C
T
A
= -25
C
0.01
35
25
15
5
0.01
0.1
I
C
/I
B
= 10
V
CE
= 10 V
f = 1 MHz
l
E
= 0 V
T
A
= 25
C
V
O
= 5 V
V
O
= 0.2 V
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13
TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5132DW1T1
75
C
25
C
-25
C
Figure 42. V
CE(sat)
versus I
C
Figure 43. DC Current Gain
Figure 44. Output Capacitance
Figure 45. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 46. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
50
40
20
10
0
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
10
1
0.001
1000
V
CE(sat)
, COLLECT
OR VOL
T
AGE (VOL
TS)
h
FE
, DC CURRENT GAIN
6
45
50
40
30
20
10
0
0
C
ob
, CAP
ACIT
ANCE (pF)
2
4
8
100
6
5
4
3
2
1
0
0.001
1
10
I
C
, COLLECT
OR CURRENT (mA)
10
9
8
7
10
30
20
10
0
0.1
1
40
50
V
in
, INPUT VOL
T
AGE (VOL
TS)
75
C
25
C
T
A
= -25
C
75
C
25
C
T
A
= -25
C
75
C
25
C
T
A
= -25
C
0.01
35
25
15
5
0.01
0.1
30
10
12
I
C
/I
B
= 10
V
CE
= 10 V
f = 1 MHz
l
E
= 0 V
T
A
= 25
C
V
O
= 5 V
V
O
= 0.2 V
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MUN5111DW1T1 Series
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14
TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5133DW1T1
75
C
25
C
-25
C
Figure 47. V
CE(sat)
versus I
C
Figure 48. DC Current Gain
Figure 49. Output Capacitance
Figure 50. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 51. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
50
40
20
10
0
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
10
1
0.001
1000
V
CE(sat)
, COLLECT
OR VOL
T
AGE (VOL
TS)
h
FE
, DC CURRENT GAIN
6
45
50
40
30
20
10
0
0
C
ob
, CAP
ACIT
ANCE (pF)
2
4
8
100
6
5
4
3
2
1
0
0.001
1
10
I
C
, COLLECT
OR CURRENT (mA)
10
9
8
7
10
30
20
10
0
0.1
1
40
50
V
in
, INPUT VOL
T
AGE (VOL
TS)
75
C
25
C
T
A
= -25
C
75
C
25
C
T
A
= -25
C
75
C
25
C
T
A
= -25
C
0.01
35
25
15
5
0.01
0.1
30
5
1
3
7
I
C
/I
B
= 10
V
CE
= 10 V
f = 1 MHz
l
E
= 0 V
T
A
= 25
C
V
O
= 5 V
V
O
= 0.2 V
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MUN5111DW1T1 Series
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15
TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5134DW1T1
75
C
25
C
-25
C
Figure 52. V
CE(sat)
versus I
C
Figure 53. DC Current Gain
Figure 54. Output Capacitance
Figure 55. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 56. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
50
40
20
10
0
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
10
1
0.001
1000
V
CE(sat)
, COLLECT
OR VOL
T
AGE (VOL
TS)
h
FE
, DC CURRENT GAIN
3
45
50
40
30
20
10
0
0
C
ob
, CAP
ACIT
ANCE (pF)
1
2
100
6
5
4
3
2
1
0
0.001
1
10
I
C
, COLLECT
OR CURRENT (mA)
10
9
8
7
100
30
20
10
0
0.1
1
40
50
V
in
, INPUT VOL
T
AGE (VOL
TS)
75
C
25
C
T
A
= -25
C
75
C
25
C
T
A
= -25
C
75
C
25
C
T
A
= -25
C
0.01
35
25
15
5
0.01
0.1
30
2.5
0.5
1.5
3.5
10
I
C
/I
B
= 10
V
CE
= 10 V
f = 1 MHz
l
E
= 0 V
T
A
= 25
C
V
O
= 5 V
V
O
= 0.2 V
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MUN5111DW1T1 Series
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16
TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5135DW1T1
75
C
25
C
-25
C
Figure 57. V
CE(sat)
versus I
C
Figure 58. DC Current Gain
Figure 59. Output Capacitance
Figure 60. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 61. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
50
40
20
10
0
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
10
1
0.001
1000
V
CE(sat)
, COLLECT
OR VOL
T
AGE (VOL
TS)
h
FE
, DC CURRENT GAIN
6
45
50
40
30
20
10
0
0
C
ob
, CAP
ACIT
ANCE (pF)
2
4
8
100
6
5
4
3
2
1
0
0.001
1
10
I
C
, COLLECT
OR CURRENT (mA)
10
9
8
7
10
30
20
10
0
0.1
1
40
50
V
in
, INPUT VOL
T
AGE (VOL
TS)
75
C
25
C
T
A
= -25
C
75
C
25
C
T
A
= -25
C
75
C
25
C
T
A
= -25
C
0.01
35
25
15
5
0.01
0.1
30
10
12
I
C
/I
B
= 10
V
CE
= 10 V
f = 1 MHz
l
E
= 0 V
T
A
= 25
C
V
O
= 5 V
V
O
= 0.2 V
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MUN5111DW1T1 Series
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17
TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5136DW1T1
75
C
25
C
-25
C
Figure 62. V
CE(sat)
versus I
C
Figure 63. DC Current Gain
Figure 64. Output Capacitance
Figure 65. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 66. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
7
6
5
4
3
2
1
0
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
10
1
0.01
1000
V
CE(sat)
, COLLECT
OR VOL
T
AGE (VOL
TS)
h
FE
, DC CURRENT GAIN (NORMALIZED)
1.2
0.6
60
50
40
30
20
10
0
0
C
ob
, CAP
ACIT
ANCE (pF)
0.2
0.4
0.8
1.0
100
6
5
4
3
2
1
0
0.1
1
10
I
C
, COLLECT
OR CURRENT (mA)
10
9
8
7
100
12
10
8
6
4
2
0
1
10
18
16
14
20
V
in
, INPUT VOL
T
AGE (VOL
TS)
I
C
/I
B
= 10
75
C
25
C
T
A
= -25
C
V
CE
= 10 V
75
C
25
C
T
A
= -25
C
V
O
= 5 V
V
O
= 0.2 V
75
C
25
C
T
A
= -25
C
f = 1 MHz
I
E
= 0 V
T
A
= 25
C
V
O
= 5 V
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TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5137DW1T1
Figure 67. V
CE(sat)
versus I
C
Figure 68. DC Current Gain
Figure 69. Output Capacitance
Figure 70. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 71. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
35
30
25
20
15
10
5
0
I
C
, COLLECTOR CURRENT (mA)
100
10
1
100
10
0.01
1000
h
FE
, DC CURRENT GAIN (NORMALIZED)
1.4
0.6
60
50
40
30
20
10
0
0
C
ob
, CAP
ACIT
ANCE (pF)
0.2
0.4
0.8
1.0
100
6
5
4
3
2
1
0
0.001
1
10
I
C
, COLLECT
OR CURRENT (mA)
11
9
8
7
100
15
10
5
0
1
10
20
25
V
in
, INPUT VOL
T
AGE (VOL
TS)
50
45
40
0.1
0.01
10
1.2
f = 1 MHz
I
E
= 0 V
T
A
= 25
C
75
C
25
C
T
A
= -25
C
V
O
= 5 V
75
C
25
C
T
A
= -25
C
V
O
= 0.2 V
75
C
25
C
T
A
= -25
C
I
C
/I
B
= 10
V
CE
= 10 V
75
C
25
C
T
A
= -25
C
V
CE(sat)
, COLLECT
OR VOL
T
AGE (VOL
TS)
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19
PACKAGE DIMENSIONS
SC-88 (SOT-363)
CASE 419B-02
ISSUE T
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B-01 OBSOLETE, NEW STANDARD 419B-02.
DIM
A
MIN
MAX
MIN
MAX
MILLIMETERS
1.80
2.20
0.071
0.087
INCHES
B
1.15
1.35
0.045
0.053
C
0.80
1.10
0.031
0.043
D
0.10
0.30
0.004
0.012
G
0.65 BSC
0.026 BSC
H
---
0.10
---
0.004
J
0.10
0.25
0.004
0.010
K
0.10
0.30
0.004
0.012
N
0.20 REF
0.008 REF
S
2.00
2.20
0.079
0.087
B
0.2 (0.008)
M
M
1
2
3
A
G
S
H
C
N
J
K
6
5
4
-B-
D
6 PL
mm
inches
SCALE 20:1
0.65
0.025
0.65
0.025
0.50
0.0197
0.40
0.0157
1.9
0.0748
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
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MUN5111DW1T1 Series
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20
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
"Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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