Semiconductor Components Industries, LLC, 2003
December, 2003 - Rev. 5
1
Publication Order Number:
MUN5211DW1T1/D
MUN5211DW1T1 Series
Preferred Devices
Dual Bias Resistor
Transistors
NPN Silicon Surface Mount Transistors
with Monolithic Bias Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base-emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the MUN5211DW1T1 series,
two BRT devices are housed in the SOT-363 package which is ideal
for low power surface mount applications where board space is at a
premium.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel
MAXIMUM RATINGS
(T
A
= 25
C unless otherwise noted, common for Q
1
and Q
2
)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
C
Derate above 25
C
P
D
187 (Note 1.)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
mW
mW/
C
Thermal Resistance -
Junction-to-Ambient
R
JA
670 (Note 1.)
490 (Note 2.)
C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation
T
A
= 25
C
Derate above 25
C
P
D
250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
mW
mW/
C
Thermal Resistance -
Junction-to-Ambient
R
JA
493 (Note 1.)
325 (Note 2.)
C/W
Thermal Resistance -
Junction-to-Lead
R
JL
188 (Note 1.)
208 (Note 2.)
C/W
Junction and Storage Temperature
T
J
, T
stg
- 55 to +150
C
1. FR-4 @ Minimum Pad
2. FR-4 @ 1.0 x 1.0 inch Pad
Preferred devices are recommended choices for future use
and best overall value.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Q
1
R
1
R
2
R
2
R
1
Q
2
(1)
(2)
(3)
(4)
(5)
(6)
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SOT-363
CASE 419B
STYLE 1
MARKING DIAGRAM
1
6
XX
d
XX = Specific Device Code
d
= Date Code
=
(See Page 2)
1
6
MUN5211DW1T1 Series
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2
DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
R1 (K)
R2 (K)
Shipping
MUN5211DW1T1
SOT-363
7A
10
10
3000/Tape & Reel
MUN5212DW1T1
SOT-363
7B
22
22
3000/Tape & Reel
MUN5213DW1T1
SOT-363
7C
47
47
3000/Tape & Reel
MUN5214DW1T1
SOT-363
7D
10
47
3000/Tape & Reel
MUN5215DW1T1
SOT-363
7E
10
3000/Tape & Reel
MUN5216DW1T1
SOT-363
7F
4.7
3000/Tape & Reel
MUN5230DW1T1
SOT-363
7G
1.0
1.0
3000/Tape & Reel
MUN5231DW1T1
SOT-363
7H
2.2
2.2
3000/Tape & Reel
MUN5232DW1T1
SOT-363
7J
4.7
4.7
3000/Tape & Reel
MUN5233DW1T1
SOT-363
7K
4.7
47
3000/Tape & Reel
MUN5234DW1T1
SOT-363
7L
22
47
3000/Tape & Reel
MUN5235DW1T1
SOT-363
7M
2.2
47
3000/Tape & Reel
MUN5236DW1T1
SOT-363
7N
100
100
3000/Tape & Reel
MUN5237DW1T1
SOT-363
7P
47
22
3000/Tape & Reel
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted, common for Q
1
and Q
2
)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
I
CBO
-
-
100
nAdc
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
I
CEO
-
-
500
nAdc
Emitter-Base Cutoff Current
MUN5211DW1T1
(V
EB
= 6.0 V, I
C
= 0)
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5236DW1T1
MUN5237DW1T1
I
EBO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector-Base Breakdown Voltage (I
C
= 10
A, I
E
= 0)
V
(BR)CBO
50
-
-
Vdc
Collector-Emitter Breakdown Voltage (Note 3.) (I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50
-
-
Vdc
3. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
MUN5211DW1T1 Series
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3
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted, common for Q
1
and Q
2
) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(Note 4.)
DC Current Gain
MUN5211DW1T1
(V
CE
= 10 V, I
C
= 5.0 mA)
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5236DW1T1
MUN5237DW1T1
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
150
140
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Collector-Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) MUN5230DW1T1/MUN5231DW1T1
(I
C
= 10 mA, I
B
= 1 mA) MUN5215DW1T1/MUN5216DW1T1
MUN5232DW1T1/MUN5233DW1T1/MUN5234DW1T1
V
CE(sat)
-
-
0.25
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 k
)
MUN5211DW1T1
MUN5212DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 k
)
MUN5213DW1T1
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 k
)
MUN5236DW1T1
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 k
)
MUN5237DW1T1
V
OL
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 k
)
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 k
)
MUN5230DW1T1
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 k
)
MUN5215DW1T1
MUN5216DW1T1
MUN5233DW1T1
V
OH
4.9
-
-
Vdc
4. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
MUN5211DW1T1 Series
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4
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted, common for Q
1
and Q
2
) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS
(Note 5.) (Continued)
Input Resistor
MUN5211DW1T1
MUN5212DW1T1
MUN5213DW1T1
MUN5214DW1T1
MUN5215DW1T1
MUN5216DW1T1
MUN5230DW1T1
MUN5231DW1T1
MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5236DW1T1
MUN5237DW1T1
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
k
Resistor Ratio MUN5211DW1T1/MUN5212DW1T1/
MUN5213DW1T1/MUN5236DW1T1
MUN5214DW1T1
MUN5215DW1T1/MUN5216DW1T1
MUN5230DW1T1/MUN5231DW1T1/MUN5232DW1T1
MUN5233DW1T1
MUN5234DW1T1
MUN5235DW1T1
MUN5237DW1T1
R1/R2
0.8
0.17
-
0.8
0.055
0.38
0.038
1.7
1.0
0.21
-
1.0
0.1
0.47
0.047
2.1
1.2
0.25
-
1.2
0.185
0.56
0.056
2.6
5. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
Figure 1. Derating Curve
300
200
150
100
50
0
- 50
0
50
100
150
T
A
, AMBIENT TEMPERATURE (
C)
R
JA
= 833
C/W
250
P
D
, POWER DISSIP
A
TION (mW)
ALL MUN5211DW1T1 SERIES DEVICES
MUN5211DW1T1 Series
http://onsemi.com
5
TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5211DW1T1
V in
, INPUT
VOL
T
AGE (VOL
TS)
I C
, COLLECT
OR CURRENT
(mA)
h FE
, DC CURRENT
GAIN (NORMALIZED)
Figure 2. V
CE(sat)
versus I
C
10
0
20
30
I
C
, COLLECTOR CURRENT (mA)
10
1
0.1
T
A
= -25
C
75
C
25
C
40
50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
1
0.1
0.01
0.001
0
20
40
50
I
C
, COLLECTOR CURRENT (mA)
1000
100
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
T
A
= 75
C
25
C
-25
C
T
A
= -25
C
25
C
Figure 5. Output Current versus Input Voltage
75
C
25
C
T
A
= -25
C
100
10
1
0.1
0.01
0.001
0
1
2
3
4
V
in
, INPUT VOLTAGE (VOLTS)
5
6
7
8
9
10
Figure 6. Input Voltage versus Output Current
50
0
10
20
30
40
4
3
1
2
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C ob
, CAP
ACIT
ANCE (pF)
75
C
V
CE
= 10 V
f = 1 MHz
I
E
= 0 V
T
A
= 25
C
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
V CE(sat)
, COLLECT
OR VOL
T
AGE (VOL
TS)
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