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Электронный компонент: MURS120T3

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Semiconductor Components Industries, LLC, 2004
December, 2004 - Rev. 7
1
Publication Order Number:
MURS120T3/D
MURS120T3 Series
Preferred Devices
Surface Mount Ultrafast
Power Rectifiers
MURS105T3, MURS110T3, MURS115T3,
MURS120T3, MURS140T3, MURS160T3
Ideally suited for high voltage, high frequency rectification, or as
free wheeling and protection diodes in surface mount applications
where compact size and weight are critical to the system.
Features
Pb-Free Packages are Available
Small Compact Surface Mountable Package with J-Bend Leads
Rectangular Package for Automated Handling
High Temperature Glass Passivated Junction
Low Forward Voltage Drop (0.71 to 1.05 Volts Max @ 1.0 A,
T
J
= 150
C)
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 95 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260
C Max. for 10 Seconds
Polarity: Polarity Band Indicates Cathode Lead
U1 = Device Code
x
=
A, B, C, D, G or J
A
= Assembley Location
Y
= Year
W = Work Week
Preferred devices are recommended choices for future use
and best overall value.
See detailed ordering and shipping information in the table on
page 2 of this data sheet.
ORDERING INFORMATION
MARKING DIAGRAM
See general marking information in the device marking table
on page 2 of this data sheet.
DEVICE MARKING INFORMATION
ULTRAFAST RECTIFIERS
1.0 AMPERE
50-600 VOLTS
SMB
CASE 403A
AYW
U1x
http://onsemi.com
MURS120T3 Series
http://onsemi.com
2
MAXIMUM RATINGS
MURS
Rating
Symbol
105T3
110T3
115T3
120T3
140T3
160T3
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50
100
150
200
400
600
V
Average Rectified Forward Current
I
F(AV)
1.0 @ T
L
= 155
C
2.0 @ T
L
= 145
C
1.0 @ T
L
= 150
C
2.0 @ T
L
= 125
C
A
Non-Repetitive Peak Surge Current
(Surge applied at rated load conditions
halfwave, single phase, 60 Hz)
I
FSM
40
35
A
Operating Junction Temperature
T
J
*
65 to +175
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not im-
plied, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Lead
(T
L
= 25
C)
R
q
JL
13
C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
(i
F
= 1.0 A, T
J
= 25
C)
(i
F
= 1.0 A, T
J
= 150
C)
v
F
0.875
0.71
1.25
1.05
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, T
J
= 25
C)
(Rated DC Voltage, T
J
= 150
C)
i
R
2.0
50
5.0
150
m
A
Maximum Reverse Recovery Time
(i
F
= 1.0 A, di/dt = 50 A/
m
s)
(i
F
= 0.5 A, i
R
= 1.0 A, I
R
to 0.25 A)
t
rr
35
25
75
50
ns
Maximum Forward Recovery Time
(i
F
= 1.0 A, di/dt = 100 A/
m
s, Rec. to 1.0 V)
t
fr
25
50
ns
1. Pulse Test: Pulse Width = 300
m
s, Duty Cycle
v
2.0%.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Package
Shipping
MURS105T3
U1A
SMB
2500 Units/Tape & Reel
MURS110T3
U1B
SMB
2500 Units/Tape & Reel
MURS115T3
U1C
SMB
2500 Units/Tape & Reel
MURS120T3
U1D
SMB
2500 Units/Tape & Reel
MURS120T3G
U1D
SMB
(Pb-Free)
2500 Units/Tape & Reel
MURS140T3
U1G
SMB
2500 Units/Tape & Reel
MURS140T3G
U1G
SMB
(Pb-Free)
2500 Units/Tape & Reel
MURS160T3
U1J
SMB
2500 Units/Tape & Reel
MURS160T3G
U1J
SMB
(Pb-Free)
2500 Units/Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
MURS120T3 Series
http://onsemi.com
3
MURS105T3, MURS110T3, MURS115T3, MURS120T3
Figure 1. Typical Forward Voltage
v
F,
INSTANTANEOUS VOLTAGE (VOLTS)
0.3
0.6
0.4
0.8
3.0
0.01
0.03
0.02
0.2
0.1
10
2.0
0.7
0.7
0.3
0.05
0.5
5.0
, INST
ANT
ANEOUS FOR
W
ARD CURRENT
(AMPS)
F
0.9
1.3
V
R
, REVERSE VOLTAGE (VOLTS)
0
60
40
100
120
40
80
0.008
0.004
0.002
0.8
0.4
0.2
20
4.0
2.0
8.0
T
J
= 175
C
I R
20
80
200
Figure 2. Typical Reverse Current*
T
C
, CASE TEMPERATURE (
C)
80
90
1.0
2.0
3.0
4.0
5.0
I F(A
V)
0
6.0
7.0
8.0
9.0
10
100
110
120
130
140
150
160
170
180
V
R
, REVERSE VOLTAGE (VOLTS)
0
30
20
0
10
5.0
15
25
20
50
35
30
C, CAP
ACIT
ANCE (pF)
10
100
Figure 3. Typical Capacitance
Figure 4. Current Derating, Case
0
0.5
1.0
2.0
3.0
4.0
5.0
0
1.0
1.5
2.0
2.5
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
P
F(A
V)
Figure 5. Power Dissipation
0.5
0.07
1.0
7.0
1.0
1.1
1.2
100
C
T
C
= 25
C
175
C
160
180
140
0.08
0.04
0.02
, REVERSE CURRENT
(
A)
m
T
J
= 100
C
T
J
= 25
C
60
50
40
90
80
70
45
40
NOTE: TYPICAL
CAPACITANCE AT
0 V = 45 pF
* The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these same curves if applied V
R
is sufficiently
below rated V
R
.
RATED VOLTAGE APPLIED
R
qJC
= 13
C/W
T
J
= 175
C
,
A
VERAGE POWER DISSIP
A
TION (W
A
TTS)
SQUARE WAVE
DC
,
A
VERAGE FOR
W
ARD CURRENT
(AMPS)
T
J
= 175
C
DC
SQUARE WAVE
(CAPACITANCE LOAD)
I
PK
I
AV
+ 20
10
5.0
i
MURS120T3 Series
http://onsemi.com
4
MURS140T3, MURS160T3
Figure 6. Typical Forward Voltage
v
F,
INSTANTANEOUS VOLTAGE (VOLTS)
0.3
0.9
0.5
1.3
3.0
0.01
0.03
0.02
0.2
0.1
10
2.0
0.7
1.1
0.3
0.05
0.5
5.0
i , INST
ANT
ANEOUS FOR
W
ARD CURRENT
(AMPS)
F
1.5
2.3
V
R
, REVERSE VOLTAGE (VOLTS)
0
100
300
400
40
80
0.008
0.004
0.8
0.4
0.2
20
4.0
2.0
8.0
T
J
= 175
C
I R
200
700
Figure 7. Typical Reverse Current*
T
C
, CASE TEMPERATURE (
C)
0
20
1.0
2.0
3.0
4.0
5.0
I F(A
V)
0
6.0
7.0
8.0
9.0
10
40
60
80
100
120
140
160
180
200
V
R
, REVERSE VOLTAGE (VOLTS)
0
12
8.0
0
5.0
10
25
15
C, CAP
ACIT
ANCE (pF)
4.0
40
Figure 8. Typical Capacitance
Figure 9. Current Derating, Case
0
0.5
1.0
2.0
3.0
4.0
5.0
0
1.0
1.5
2.0
2.5
I
F(AV)
, AVERAGE FORWARD CURRENT (AMPS)
P
F(A
V)
Figure 10. Power Dissipation
0.7
0.07
1.0
7.0
1.7
1.9
2.1
100
C
T
C
= 25
C
175
C
600
500
0.08
0.04
0.02
, REVERSE CURRENT
(
A)
m
T
J
= 100
C
T
J
= 25
C
24
20
16
36
32
28
20
NOTE: TYPICAL
CAPACITANCE AT
0 V = 24 pF
* The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these same curves if applied V
R
is sufficiently
below rated V
R
.
RATED VOLTAGE APPLIED
R
qJC
= 13
C/W
T
J
= 175
C
,
A
VERAGE POWER DISSIP
A
TION (W
A
TTS)
SQUARE WAVE
DC
,
A
VERAGE FOR
W
ARD CURRENT
(AMPS)
T
J
= 175
C
DC
SQUARE WAVE
10
5.0
400
200
(CAPACITANCE LOAD)
I
PK
I
AV
+ 20
MURS120T3 Series
http://onsemi.com
5
PACKAGE DIMENSIONS
A
S
D
B
J
P
K
C
H
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.160
0.180
4.06
4.57
B
0.130
0.150
3.30
3.81
C
0.075
0.095
1.90
2.41
D
0.077
0.083
1.96
2.11
H 0.0020 0.0060
0.051
0.152
J
0.006
0.012
0.15
0.30
K
0.030
0.050
0.76
1.27
P
0.020 REF
0.51 REF
S
0.205
0.220
5.21
5.59
SMB
DO-214AA
CASE 403A-03
ISSUE D
mm
inches
SCALE 8:1
2.743
0.108
2.159
0.085
2.261
0.089
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*