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Электронный компонент: NZL9V1AXV3T1

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Semiconductor Components Industries, LLC, 2003
June, 2003 - Rev. 0
1
Publication Order Number:
NZL5V6AXV3T1/D
NZL5V6AXV3T1 Series
Preferred Devices
Zener Voltage Regulators
SC - 89 Dual Common Anode Zeners
for ESD Protection
These dual monolithic silicon zener diodes are designed for
applications requiring ESD protection capability. They are intended for
use in voltage and ESD sensitive equipment such as computers,
printers, business machines, communication systems, medical
equipment and other applications. Their dual junction common anode
design protects two separate lines using only one package. These
devices are ideal for situations where board space is at a premium.
Specification Features:
SC-89 Package Allows Either Two Separate Unidirectional
Configurations or a Single Bidirectional Configuration
Standard Zener Breakdown Voltage Ranges
ESD Rating of Class N (exceeding 16 kV) per the Human
Body Model and IEC61000-4-2
Low Leakage < 5.0
mA
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic
Epoxy Meets UL94, VO
LEAD FINISH:
100% Matte Sn (Tin)
MOUNTING POSITION:
Any
QUALIFIED MAX REFLOW TEMPERATURE:
260
C
Device Meets MSL 1 Requirements
Use the Device Number to order the 7 inch/3,000 unit reel.
Preferred devices are recommended choices for future use
and best overall value.
SC - 89
CASE 463C
STYLE 4
1
3
2
PIN 1. CATHODE
2. CATHODE
3. ANODE
Device
Package
Shipping
ORDERING INFORMATION
NZL5V6AXV3T1
SC - 89
3000/Tape & Reel
NZL6V8AXV3T1
SC - 89
3000/Tape & Reel
NZL7V5AXV3T1
SC - 89
3000/Tape & Reel
MARKING
DIAGRAM
xx
= Device Code
D
= Date Code
See specific marking information in the device marking
column of the table on page 2 of this data sheet.
DEVICE MARKING INFORMATION
http://onsemi.com
xx D
1
3
2
Uni - Directional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
NZL5V6AXV3T1 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Total Power Dissipation on FR - 5 Board (Note 1) @ T
A
= 25
C
Derate above 25
C
P
D
240
1.9
mW
mW/
C
Thermal Resistance Junction to Ambient
R
JA
525
C/W
Junction and Storage Temperature Range
T
J
, T
stg
- 55 to +150
C
Lead Solder Temperature - Maximum (10 Second Duration)
T
L
260
C
1. FR - 5 board with minimum recommended mounting pad.
*Other voltages may be available upon request
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted)
UNIDIRECTIONAL
(Circuit tied to Pins 1 and 3 or 2 and 3)
Symbol
Parameter
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
Q
V
BR
Maximum Temperature Coefficient of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
Z
ZT
Maximum Zener Impedance @ I
ZT
I
ZK
Reverse Current
Z
ZK
Maximum Zener Impedance @ I
ZK
ELECTRICAL CHARACTERISTICS
(T
A
= 25
C unless otherwise noted, V
F
= 0.9 V Max @ I
F
= 10 mA for all types)
UNIDIRECTIONAL
(Circuit tied to Pins 1 and 3 or Pins 2 and 3)
Breakdown Voltage
Zener Impedance
Device
V
RWM
I
R
@ V
RWM
V
BR
(Note 2) (V)
@ Iz
T
Z
ZT
@ I
ZT
Z
ZK
@ I
ZK
Device
Device
Marking
Volts
m
A
Min
Nom
Max
mA
W
W
mA
NZL5V6AXV3T1
L0
3.0
5.0
5.32
5.6
5.88
5.0
40
200
1.0
NZL6V8AXV3T1
L2
4.5
1.0
6.46
6.8
7.14
5.0
15
100
1.0
NZL7V5AXV3T1
L3
5.0
1.0
7.12
7.5
7.88
5.0
15
100
1.0
2. V
BR
measured at pulse test current I
T
at an ambient temperature of 25
C.
3. Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for I
Z(AC)
= 0.1 I
Z(DC)
, with the AC frequency = 1.0 kHz.
NZL5V6AXV3T1 Series
http://onsemi.com
3
TYPICAL CHARACTERISTICS
- 55
+ 45
8.0
Figure 1. Typical Breakdown Voltage
versus Temperature
(Upper curve for each voltage is bidirectional mode,
lower curve is unidirectional mode)
- 5
TEMPERATURE (
C)
+ 95
+ 145
7.0
6.5
6.0
5.5
5.0
4.5
- 55
- 5
250
Figure 2. Typical Leakage Current
versus Temperature
TEMPERATURE (
C)
+ 45
+ 95
200
150
100
50
0
BREAKDOWN VOL
T
AGE (VOL
TS) (V
BR
@ I
T
)
I
R
(nA)
7.5
NZL5V6AXV3T1
NZL6V8AXV3T1
+ 145
NZL5V6AXV3T1
NZL6V8AXV3T1
Figure 3. Typical Capacitance versus Bias Voltage
0
25
50
75
100
125
150
175
300
250
200
150
100
50
0
Figure 4. Steady State Power Derating Curve
TEMPERATURE (
C)
FR - 5 BOARD
P
D
, POWER DISSIP
A
TION (mW)
0
5
10
15
20
25
30
35
40
45
50
0
0.4
0.8
1.2
1.6
2.0
5.6 V
6.8 V
TEMPERATURE (
C)
CAP
ACIT
ANCE (pF)
NZL5V6AXV3T1 Series
http://onsemi.com
4
TYPICAL COMMON ANODE APPLICATIONS
A dual junction common anode design in an SC-89
package protects two separate lines using only one package.
This adds flexibility and creativity to PCB design especially
when board space is at a premium. Two simplified examples
of TVS applications are illustrated below.
KEYBOARD
TERMINAL
PRINTER
ETC.
FUNCTIONAL
DECODER
I/O
A
NZLxxxAXV3T1
GND
Computer Interface Protection
B
C
D
Microprocessor Protection
I/O
RAM
ROM
CLOCK
CPU
CONTROL BUS
ADDRESS BUS
DATA BUS
GND
V
GG
V
DD
NZLxxxAXV3T1
NZLxxxAXV3T1
NZL5V6AXV3T1 Series
http://onsemi.com
5
INFORMATION FOR USING THE SC - 89 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SC - 89
0.53
1.10
0.50
0.53
Dimensions in Millimeters
SC - 89 POWER DISSIPATION
The power dissipation of the SC-89 is a function of the
drain pad size. This can vary from the minimum pad size
for soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by T
J(max)
, the maximum rated junction
temperature of the die, R
JA
, the thermal resistance from
the device junction to ambient, and the operating
temperature, T
A
. Using the values provided on the data
sheet for the SC-89 package, P
D
can be calculated as
follows:
P
D
=
T
J(max)
- T
A
R
JA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature T
A
of 25
C,
one can calculate the power dissipation of the device which
in this case is 240 milliwatts.
P
D
= 150
C - 25
C
= 240 milliwatts
525
C/W
The 525
C/W for the SC-89 package assumes the use of
the recommended footprint on a glass epoxy printed circuit
board to achieve a power dissipation of TBD milliwatts.
There are other alternatives to achieving higher power
dissipation from the SC-89 package. Another alternative
would be to use a ceramic substrate or an aluminum core
board such as Thermal Clad
. Using a board material such
as Thermal Clad, an aluminum core board, the power
dissipation can be doubled using the same footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
Always preheat the device.
The delta temperature between the preheat and
soldering should be 100
C or less.*
When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10
C.
The soldering temperature and time shall not exceed
260
C for more than 10 seconds.
When shifting from preheating to soldering, the
maximum temperature gradient shall be 5
C or less.
After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause excessive
thermal shock and stress which can result in damage to the
device.
NZL5V6AXV3T1 Series
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6
SC - 89, 3 - LEAD
CASE 463C - 02
ISSUE B
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
G
M
0.08 (0.003)
X
D
3 PL
J
- X -
- Y -
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 463C - 01 OBSOLETE, NEW STANDARD 463C - 02.
A
B
Y
1
2
3
N
2 PL
K
C
- T -
SEATING
PLANE
DIM
A
MIN
NOM
MIN
NOM
INCHES
1.50
1.60
1.70
0.059
MILLIMETERS
B
0.75
0.85
0.95
0.030
C
0.60
0.70
0.80
0.024
D
0.23
0.28
0.33
0.009
G
0.50 BSC
H
0.53 REF
J
0.10
0.15
0.20
0.004
K
0.30
0.40
0.50
0.012
L
1.10 REF
M
---
---
10
---
N
---
---
10
---
S
1.50
1.60
1.70
0.059
0.063
0.067
0.034
0.040
0.028
0.031
0.011
0.013
0.020 BSC
0.021 REF
0.006
0.008
0.016
0.020
0.043 REF
---
10
---
10
0.063
0.067
MIN
MAX
_
_
_
_
M
S
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be
validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
JAPAN: ON Semiconductor, Japan Customer Focus Center
2 - 9 - 1 Kamimeguro, Meguro - ku, Tokyo, Japan 153 - 0051
Phone: 81 - 3 - 5773- 3850
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
NZL5V6AXV3T1/D
Thermal Clad is a registered trademark of the Bergquist Company.
Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303 - 675- 2175 or 800 - 344- 3860 Toll Free USA/Canada
Fax: 303 - 675- 2176 or 800 - 344- 3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
N. American Technical Support: 800 - 282- 9855 Toll Free USA/Canada