1
Motorola Bipolar Power Transistor Device Data
Plastic Medium-Power
Complementary Silicon Transistors
. . . designed for generalpurpose amplifier and lowspeed switching applications.
High DC Current Gain --
hFE = 2500 (Typ) @ IC = 1.0 Adc
CollectorEmitter Sustaining Voltage -- @ 30 mAdc
VCEO(sus) = 60 Vdc (Min) -- TIP110, TIP115
VCEO(sus)
= 80 Vdc (Min) -- TIP111, TIP116
VCEO(sus)
= 100 Vdc (Min) -- TIP112, TIP117
Low CollectorEmitter Saturation Voltage --
VCE(sat) = 2.5 Vdc (Max) @ IC = 2.0 Adc
Monolithic Construction with Builtin BaseEmitter Shunt Resistors
TO220AB Compact Package
*MAXIMUM RATINGS
Rating
Symbol
TIP110,
TIP115
TIP111,
TIP116
TIP112,
TIP117
Unit
CollectorEmitter Voltage
VCEO
60
80
100
Vdc
CollectorBase Voltage
VCB
60
80
100
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current -- Continuous
Peak
IC
2.0
4.0
Adc
Base Current
IB
50
mAdc
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
50
0.4
Watts
W/
_
C
Total Power Dissipation @ TA = 25
_
C
Derate above 25
_
C
PD
2.0
0.016
Watts
W/
_
C
Unclamped Inductive Load Energy --
Figure 13
E
25
mJ
Operating and Storage Junction
TJ, Tstg
65 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
2.5
_
C/W
Thermal Resistance, Junction to Ambient
R
JA
62.5
_
C/W
0
0
20
40
60
80
100
120
160
Figure 1. Power Derating
T, TEMPERATURE (
C)
P
D
, POWER DISSIP
A
TION (W
A
TTS)
40
20
60
140
TC
0
2.0
1.0
3.0
TA
TA
TC
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TIP110/D
Motorola, Inc. 1995
TIP110
TIP111
TIP112
TIP115
TIP116
TIP117
DARLINGTON
2 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 80 100 VOLTS
50 WATTS
*Motorola Preferred Device
*
NPN
PNP
*
*
*
CASE 221A06
TO220AB
REV 1
TIP110 TIP111 TIP112 TIP115 TIP116 TIP117
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
TIP110, TIP115
TIP111, TIP116
TIP112, TIP117
VCEO(sus)
60
80
100
--
--
--
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
TIP110, TIP115
(VCE = 40 Vdc, IB = 0)
TIP111, TIP116
(VCE = 50 Vdc, IB = 0)
TIP112 ,TIP117
ICEO
--
--
--
2.0
2.0
2.0
mAdc
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
TIP110, TIP115
(VCB = 80 Vdc, IE = 0)
TIP111, TIP116
(VCB = 100 Vdc, IE = 0)
TIP112, TIP117
ICBO
--
--
--
1.0
1.0
1.0
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
--
2.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
(IC = 2.0 Adc, VCE = 4.0 Vdc)
hFE
1000
500
--
--
--
CollectorEmitter Saturation Voltage
(IC = 2.0 Adc, IB = 8.0 mAdc)
VCE(sat)
--
2.5
Vdc
BaseEmitter On Voltage
(IC = 2.0 Adc, VCE = 4.0 Vdc)
VBE(on)
--
2.8
Vdc
DYNAMIC CHARACTERISTICS
SmallSignal Current Gain
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1.0 MHz)
hfe
25
--
--
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
TIP115, TIP116, TIP117
TIP110, TIP111, TIP112
Cob
--
--
200
100
pF
(1) Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2%.
Figure 2. Switching Times Test Circuit
4.0
0.04
Figure 3. Switching Times
IC, COLLECTOR CURRENT (AMP)
t,
TIME (
s)
2.0
1.0
0.8
0.2
0.06
0.1
0.2
0.4
0.6
1.0
2.0
4.0
0.6
PNP
NPN
tf
tr
ts
td @ VBE(off) = 0
V2
approx
+ 8.0 V
V1
approx
12 V
tr, tf
10 ns
DUTY CYCLE = 1.0%
25
s
0
RB
51
D1
+ 4.0 V
VCC
30 V
RC
TUT
8.0 k
60
SCOPE
for td and tr, D1 is disconnected
and V2 = 0, RB and RC are varied
to obtain desired test currents.
For NPN test circuit, reverse diode,
polarities and input pulses.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB
100 mA
MSD6100 USED BELOW IB
100 mA
VCC = 30 V
IC/IB = 250
0.4
IB1 = IB2
TJ = 25
C
TIP110 TIP111 TIP112 TIP115 TIP116 TIP117
3
Motorola Bipolar Power Transistor Device Data
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.5
0.2
0.1
0.05
0.02
r(t)
,
TRANSIENT
THERMAL
RESIST
ANCE
(NORMALIZED)
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1.0 k
500
Z
JC(t) = r(t) R
JC
R
JC = 2.5
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) Z
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE PULSE
0.1
0.7
0.3
0.07
0.03
0.02
1.0
Figure 5. TIP115, 116, 117
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
10
4.0
2.0
1.0
0.1
10
60 80 100
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25
C (SINGLE PULSE)
I C
, COLLECT
OR CURRENT
(AMPS)
TJ = 150
C
dc
1 ms
40
TIP115
TIP116
TIP117
SECONDARY BREAKDOWN LIMITED
5 ms
CURVES APPLY BELOW
RATED VCEO
1.0
Figure 6. TIP110, 111, 112
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
10
4.0
2.0
1.0
0.1
10
80 100
I C
, COLLECT
OR CURRENT
(AMPS)
60
TIP110
TIP111
TIP112
BONDING WIRE LIMITED
THERMALLY LIMITED
@ TC = 25
C (SINGLE PULSE)
TJ = 150
C
SECONDARY BREAKDOWN LIMITED
CURVES APPLY BELOW
RATED VCEO
dc
ACTIVEREGION SAFEOPERATING AREA
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figures 5 and 6 is based on TJ(pk) = 150
_
C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150
_
C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations
imposed by second breakdown.
200
0.04
VR, REVERSE VOLTAGE (VOLTS)
10
0.4 0.6 1.0
2.0
40
4.0
0.06 0.1
0.2
C, CAP
ACIT
ANCE (pF)
70
30
TC = 25
C
Cib
50
Cob
PNP
NPN
Figure 7. Capacitance
100
20
6.0 10
20
TIP110 TIP111 TIP112 TIP115 TIP116 TIP117
4
Motorola Bipolar Power Transistor Device Data
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
6.0 k
0.04
Figure 8. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
300
0.06
0.1
0.2
0.6
1.0
4.0
600
800
400
h
FE
, DC CURRENT
GAIN
1.0 k
2.0 k
VCE = 3.0 V
0.4
NPN
TIP110, 111, 112
PNP
TIP115, 116, 117
Figure 9. Collector Saturation Region
3.4
0.1
IB, BASE CURRENT (mA)
0.6
0.2
1.0
2.0
20
100
1.8
IC =
0.5 A
TJ = 25
C
1.0 A
2.6
3.0
0.5
5.0
2.2
0.04
IC, COLLECTOR CURRENT (AMP)
0.06
0.1
0.2
0.6
1.0
2.0
4.0
1.8
1.4
1.0
0.6
0.2
TJ = 25
C
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
V
, VOL
T
AGE (VOL
TS)
Figure 10. "On" Voltages
VBE @ VCE = 3.0 V
4.0 k
3.0 k
TJ = 125
C
25
C
55
C
50
IC, COLLECTOR CURRENT (AMP)
h
FE
, DC CURRENT
GAIN
VCE = 3.0 V
TJ = 125
C
25
C
55
C
1.4
2.0 A
IB, BASE CURRENT (mA)
TJ = 25
C
IC, COLLECTOR CURRENT (AMP)
V
, VOL
T
AGE (VOL
TS)
TJ = 25
C
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
VBE @ VCE = 3.0 V
2.0
10
0.4
6.0 k
0.04
300
0.06
0.1
0.2
0.6
1.0
4.0
600
800
400
1.0 k
2.0 k
0.4
4.0 k
3.0 k
2.0
2.2
1.0
4.0 A
3.4
0.1
0.6
0.2
1.0
2.0
20
100
1.8
2.6
3.0
0.5
5.0
50
1.4
10
2.2
1.0
IC =
0.5 A
1.0 A
2.0 A
4.0 A
2.2
0.04 0.06
0.1
0.2
0.6
1.0
2.0
4.0
1.8
1.4
1.0
0.6
0.2
0.4
TIP110 TIP111 TIP112 TIP115 TIP116 TIP117
5
Motorola Bipolar Power Transistor Device Data
Figure 11. Temperature Coefficients
NPN
TIP110, 111, 112
PNP
TIP115, 116, 117
Figure 12. Collector Cut-Off Region
IC, COLLECTOR CURRENT (AMP)
+ 0.8
V
,
TEMPERA
TURE COEFFICIENTS (mV/
C)
0
0.8
1.6
2.4
3.2
4.0
4.8
*APPLIES FOR IC/IB
hFE/3
*
VC for VCE(sat)
VC for VBE
0.04 0.06
0.2
0.4 0.6
1.0
2.0
4.0
25
C to 150
C
55
C to 25
C
0.1
25
C to 150
C
55
C to 25
C
IC, COLLECTOR CURRENT (AMP)
+ 0.8
V
,
TEMPERA
TURE COEFFICIENTS (mV/
C)
0
0.8
1.6
2.4
3.2
4.0
4.8
*APPLIES FOR IC/IB
hFE/3
*
VC for VCE(sat)
VC for VBE
0.04 0.06
0.2
0.4 0.6
1.0
2.0
4.0
25
C to 150
C
55
C to 25
C
0.1
25
C to 150
C
55
C to 25
C
105
0.6
103
102
100
104
101
101
VBE, BASE-EMITTER VOLTAGE (VOLTS)
0.4 0.2
0
+ 0.2 + 0.4 + 0.6 + 0.8 + 1.0 + 1.2
VCE = 30 V
TJ = 150
C
100
C
25
C
REVERSE
FORWARD
+ 1.4
, COLLECT
OR CURRENT
(
A)
I C
105
0.6
103
102
100
104
101
101
VBE, BASE-EMITTER VOLTAGE (VOLTS)
0.4 0.2
0
+ 0.2 + 0.4 + 0.6 + 0.8 + 1.0 + 1.2
VCE = 30 V
TJ = 150
C
100
C
25
C
REVERSE
FORWARD
+ 1.4
, COLLECT
OR CURRENT
(
A)
I C
Figure 13. Inductive Load Switching
Note A: Input pulse width is increased until ICM = 0.71 A,
NPN test shown; for PNP test
reverse all polarity and use MJE224 driver.
0.71 A
0 V
5 V
tw
3.5 ms (SEE NOTE A)
INPUT
VOLTAGE
COLLECTOR
CURRENT
COLLECTOR
VOLTAGE
VCER
0 V
20 V
100 ms
VCE(sat)
INPUT
MJE254
50
50
RBB1
2 k
RBB2
100
VBB2 = 0
TUT
VCE MONITOR
100 mH
VCC = 20 V
IC
MONITOR
RS =
0.1
TEST CIRCUIT
VOLTAGE AND CURRENT WAVEFORMS
+
VBB1 = 10 V
+
TIP110 TIP111 TIP112 TIP115 TIP116 TIP117
6
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 221A06
TO220AB
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.018
0.025
0.46
0.64
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
1.15
Z
0.080
2.04
B
Q
H
Z
L
V
G
N
A
K
F
1
2 3
4
D
SEATING
PLANE
T
C
S
T
U
R
J
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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TIP110/D
*TIP110/D*
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