1
Motorola Bipolar Power Transistor Device Data
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general purpose amplifier and switching applications.
Compact TO220 AB package.
MAXIMUM RATINGS
Rating
Symbol
TIP29B
TIP30B
TIP29C
TIP30C
Unit
Rating
Symbol
TIP30B
TIP30C
Unit
CollectorEmitter Voltage
VCEO
80
100
Vdc
CollectorBase Voltage
VCB
80
100
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current -- Continuous
Peak
IC
1.0
3.0
Adc
Base Current
IB
0.4
Adc
Total Power Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
30
0.24
Watts
W/
_
C
Total Power Dissipation @ TA = 25
_
C
Derate above 25
_
C
PD
2.0
0.016
Watts
W/
_
C
Unclamped Inductive Load Energy
(See Note 3)
E
32
mJ
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
JA
62.5
_
C/W
Thermal Resistance, Junction to Case
R
JC
4.167
_
C/W
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1)
TIP29B, TIP30B
(IC = 30 mAdc, IB = 0)
TIP29C, TIP30C
VCEO(sus)
80
100
--
--
Vdc
Collector Cutoff Current (VCE = 60 Vdc, IB = 0)
ICEO
--
0.3
mAdc
Collector Cutoff Current
(VCE = 80 Vdc, VEB = 0)
TIP29B, TIP30B
(VCE = 100 Vdc, VEB = 0)
TIP29C, TIP30C
ICES
--
--
200
200
Adc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
--
1.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain (IC = 0.2 Adc, VCE = 4.0 Vdc)
DC Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc)
hFE
40
15
--
75
--
CollectorEmitter Saturation Voltage (IC = 1.0 Adc, IB = 125 mAdc)
VCE(sat)
--
0.7
Vdc
BaseEmitter On Voltage (IC = 1.0 Adc, VCE = 4.0 Vdc)
VBE(on)
--
1.3
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain -- Bandwidth Product (2)
(IC = 200 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
3.0
--
MHz
SmallSignal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
20
--
--
(1) Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2.0%.
(2) fT =
hfe
ftest.
(3) This rating based on testing with LC = 20 mH, RBE = 100
, VCC = 10 V, IC = 1.8 A, P.R.F = 10 Hz.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TIP29B/D
Motorola, Inc. 1995
TIP29B
TIP29C
TIP30B
TIP30C
1 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
80 100 VOLTS
30 WATTS
NPN
PNP
CASE 221A06
TO220AB
REV 1
TIP29B TIP29C TIP30B TIP30C
2
Motorola Bipolar Power Transistor Device Data
0.03
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.03
h
FE
, DC CURRENT
GAIN
0.5
5.0
70
3.0
100
7.0
300
30
0.1
0.3
0.07
1.0
TJ = 150
C
25
C
55
C
VCE = 2.0 V
500
10
50
3.0
t,
TIME (
s)
Figure 2. TurnOff Time
IC, COLLECTOR CURRENT (AMP)
IB1 = IB2
IC/IB = 10
ts
= ts 1/8 tf
TJ = 25
C
ts
TURNON PULSE
APPROX
+11 V
Vin 0
VEB(off)
t1
APPROX
+11 V
Vin
t2
TURNOFF PULSE
t3
t1
7.0 ns
100 < t2 < 500
s
t3 < 15 ns
DUTY CYCLE
2.0%
APPROX 9.0 V
RB and RC VARIED TO OBTAIN
DESIRED CURRENT LEVELS.
SCOPE
RC
RB
VCC
Vin
Cjd << Ceb
4.0 V
Figure 3. Switching Time Equivalent Circuit
0.03
Figure 4. TurnOn Time
IC, COLLECTOR CURRENT (AMP)
0.02
0.1
3.0
0.07
1.0
1.0
IC/IB = 10
TJ = 25
C
tr @ VCC = 10 V
t,
TIME (
s)
0.5
0.3
0.1
0.05
0.05
0.3
0.5
td @ VEB(off) = 2.0 V
0.03
0.7
2.0
0.07
0.7
tr @ VCC = 30 V
0.05
0.7
tf @ VCC = 10 V
tf @ VCC = 30 V
0.07
1.0
0.5
0.3
0.1
0.05
0.03
0.7
2.0
0.2
0.1
3.0
1.0
0.05
0.3
0.5
0.07
0.7
2.0
0.2
Figure 5. Active Region Safe Operating Area
VCE, COLLECTOREMITTER VOLTAGE, (VOLTS)
10
0.1
10
SECOND BREAKDOWN LIMITED
THERMALLY LIMITED @ TC = 25
C
BONDING WIRE LIMITED
I C
, COLLECT
OR CURRENT
(AMPS)
1.0
20
100
40
3.0
4.0
0.1
TIP29B, 30B
TIP29C, 30C
TJ = 150
C
CURVES APPLY BELOW
RATED VCEO
1 ms
dc
5 ms
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE opera-
tion; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150
_
C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v
150
_
C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
TIP29B TIP29C TIP30B TIP30C
3
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 221A06
TO220AB
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.018
0.025
0.46
0.64
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
1.15
Z
0.080
2.04
B
Q
H
Z
L
V
G
N
A
K
F
1
2 3
4
D
SEATING
PLANE
T
C
S
T
U
R
J
TIP29B TIP29C TIP30B TIP30C
4
Motorola Bipolar Power Transistor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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TIP29B/D
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