31
Motorola Bipolar Power Transistor Device Data
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general purpose amplifier and switching applications.
CollectorEmitter Saturation Voltage --
VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
CollectorEmitter Sustaining Voltage --
VCEO(sus) = 60 Vdc (Min) -- TIP31A, TIP32A
VCEO(sus)
= 80 Vdc (Min) -- TIP31B, TIP32B
VCEO(sus)
= 100 Vdc (Min) -- TIP31C, TIP32C
High Current Gain -- Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
Compact TO220 AB Package
*MAXIMUM RATINGS
Rating
Symbol
TIP31A
TIP32A
TIP318
TIP32B
TIP31C
TIP32C
Unit
CollectorEmitter Voltage
VCEO
60
80
100
Vdc
CollectorBase Voltage
VCB
60
80
100
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current -- Continuous
Peak
IC
3.0
5.0
Adc
Base Current
IB
1.0
Adc
Total Power Dissipation
@ TC = 25
_
C
Derate above 25
_
C
PD
40
0.32
Watts
W/
_
C
Total Power Dissipation
@ TA = 25
_
C
Derate above 25
_
C
PD
2.0
0.016
Watts
W/
_
C
Unclamped Inductive
Load Energy (1)
E
32
mJ
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
JA
62.5
_
C/W
Thermal Resistance, Junction to Case
R
JC
3.125
_
C/W
(1) IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100
..
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TIP31A/D
Motorola, Inc. 1995
TIP31A
TIP31B
TIP31C
TIP32A
TIP32B
TIP32C
3 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 80 100 VOLTS
40 WATTS
*Motorola Preferred Device
*
NPN
PNP
*
*
*
CASE 221A06
TO220AB
REV 1
TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C
32
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1)
(IC = 30 mAdc, IB = 0)
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
VCEO(sus)
60
80
100
--
--
--
Vdc
Collector Cutoff Current (VCE = 30 Vdc, IB = 0)
TIP31A, TIP32A
Collector Cutoff Current
(VCE = 60 Vdc, IB = 0)
TIP31B, TIP31C
TIP32B, TIP32C
ICEO
--
--
--
0.3
0.3
0.3
mAdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB = 0)
TIP31A, TIP32A
(VCE = 80 Vdc, VEB = 0)
TIP31B, TIP32B
(VCE = 100 Vdc, VEB = 0)
TIP31C, TIP32C
ICES
--
--
--
200
200
200
Adc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
--
1.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc)
DC Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc)
hFE
25
10
--
50
--
CollectorEmitter Saturation Voltage (IC = 3.0 Adc, IB = 375 mAdc)
VCE(sat)
--
1.2
Vdc
BaseEmitter On Voltage (IC = 3.0 Adc, VCE = 4.0 Vdc)
VBE(on)
--
1.8
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain -- Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
3.0
--
MHz
SmallSignal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
20
--
--
(1) Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2.0%.
Figure 1. Power Derating
T, TEMPERATURE (
C)
0
100
0
1.0
160
2.0
3.0
60
80
40
140
4.0
TURNON PULSE
APPROX
+11 V
Vin 0
VEB(off)
t1
APPROX
+11 V
Vin
t2
TURNOFF PULSE
t3
t1
7.0 ns
100 < t2 < 500
s
t3 < 15 ns
DUTY CYCLE
2.0%
APPROX 9.0 V
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
SCOPE
RC
RB
VCC
Vin
Cjd << Ceb
4.0 V
Figure 2. Switching Time Equivalent Circuit
0.03
Figure 3. TurnOn Time
IC, COLLECTOR CURRENT (AMP)
0.02
0.1
3.0
0.07
1.0
1.0
IC/IB = 10
TJ = 25
C
tr @ VCC = 10 V
t,
TIME (
s)
0.5
0.3
0.1
0.05
0.05
0.3
0.5
td @ VEB(off) = 2.0 V
0.03
0.7
2.0
0.07
0.7
tr @ VCC = 30 V
20
120
P
D
, POWER DISSIP
A
TION (W
A
TTS)
TC
TA
0
10
20
30
40
TC
TA
TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C
33
Motorola Bipolar Power Transistor Device Data
t, TIME (ms)
1.0
0.01
0.01
0.1
r(t)
,
TRANSIENT
THERMAL
RESIST
ANCE (NORMALIZED)
1.0
1.0
100
Z
JC(t) = r(t) R
JC
R
JC(t) = 3.125
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) Z
JC(t)
P(pk)
t1
t2
SINGLE PULSE
1.0 k
D = 0.5
0.05
DUTY CYCLE, D = t1/t2
Figure 4. Thermal Response
0.1
0.05
0.03
0.02
0.07
0.5
0.3
0.2
0.7
0.02
0.05
0.2
0.5
2.0
5.0
200
500
10
20
50
0.2
0.02
0.01
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
10
20
5.0
50
100
Figure 5. Active Region Safe Operating Area
0.2
0.1
0.5
SECONDARY BREAKDOWN
LIMITED @ TJ
150
C
THERMAL LIMIT @ TC = 25
C
(SINGLE PULSE)
BONDING WIRE LIMIT
1.0 ms
100
s
2.0
1.0
10
5.0
I C
, COLLECT
OR CURRENT
(AMP)
5.0 ms
CURVES APPLY
BELOW RATED VCEO
TIP31A, TIP32A
TIP31B, TIP32B
TIP31C, TIP32C
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150
_
C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v
150
_
C. TJ(pk) may be calculated from the data in Fig-
ure 4. At high case temperatures, thermal limitations will re-
duce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.05
0.1
0.2
0.7
0.03
0.3
0.5
0.07
IC, COLLECTOR CURRENT (AMP)
Figure 6. TurnOff Time
3.0
t,
TIME (
s)
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.03
1.0
2.0
3.0
0.2
0.5
1.0
5.0
0.1
2.0 3.0
0.3
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
300
CAP
ACIT
ANCE (pF)
200
100
70
50
30
10
20
40
30
tf @ VCC = 30 V
tf @ VCC = 10 V
ts
IB1 = IB2
IC/IB = 10
ts
= ts 1/8 tf
TJ = 25
C
TJ = + 25
C
Ceb
Ccb
TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C
34
Motorola Bipolar Power Transistor Device Data
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
TJ, JUNCTION TEMPERATURE (
C)
103
0.4
101
100
102
102
101
103
107
105
104
102
106
103
IB, BASE CURRENT (mA)
IC, COLLECTOR CURRENT (AMP)
h
FE
, DC CURRENT
GAIN
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
IC, COLLECTOR CURRENT (AMP)
300
500
0.05 0.07
0.3
3.0
0.03
100
70
50
30
10
7.0
0.1
VBE, BASEEMITTER VOLTAGE (VOLTS)
Figure 10. "On" Voltages
VCE = 2.0 V
5.0
0.7 1.0
0.5
1.6
2.0
2.0
5.0
20
1000
1.0
0.8
0.4
10
0
100
200
500
50
25
C
TJ = 150
C
55
C
1.2
1.4
0.003
IC, COLLECTOR CURRENT (AMPS)
1.0
0.8
0.4
1.2
0.6
0.2
0
0.005 0.01 0.02 0.03 0.05
0.1
+ 2.5
IC = 0.3 A
20
60
80
100
120
160
140
40
V
, VOL
T
AGE (VOL
TS)
TJ = 25
C
1.0 A
3.0 A
0.2 0.3 0.5
1.0
2.0 3.0
TJ = 25
C
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
VCE(sat) @ IC/IB = 10
V
,
TEMPERA
TURE COEFFICIENTS (mV/
C)
+ 2.0
+ 1.5
+ 1.0
+ 0.5
0
0.5
1.0
1.5
2.0
2.5
0.003 0.005 0.01
0.02
0.05
0.1
0.2 0.3 0.5
1.0
2.0 3.0
*APPLIES FOR IC/IB
hFE/2
TJ = 65
C TO + 150
C
*
VC FOR VCE(sat)
VB FOR VBE
Figure 11. Temperature Coefficients
, COLLECT
OR CURRENT
(
A)
I C
0.3 0.2 0.1
0
+ 0.1 + 0.2 + 0.3 + 0.4 + 0.5
+ 0.6
Figure 12. Collector CutOff Region
Figure 13. Effects of BaseEmitter Resistance
VCE = 30 V
TJ = 150
C
100
C
25
C
REVERSE
FORWARD
ICES
R
BE
, EXTERNAL
BASEEMITTER RESIST
ANCE (OHMS)
VCE = 30 V
IC = 10 x ICES
IC
ICES
IC = 2 x ICES
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C
35
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 221A06
TO220AB
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.018
0.025
0.46
0.64
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
1.15
Z
0.080
2.04
B
Q
H
Z
L
V
G
N
A
K
F
1
2 3
4
D
SEATING
PLANE
T
C
S
T
U
R
J
TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C
36
Motorola Bipolar Power Transistor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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