1
Motorola Bipolar Power Transistor Device Data
Complementary Silicon
High-Power Transistors
. . . for generalpurpose power amplifier and switching applications.
25 A Collector Current
Low Leakage Current -- ICEO = 1.0 mA @ 30 and 60 V
Excellent DC Gain -- hFE = 40 Typ @ 15 A
High Current Gain Bandwidth Product --
hfe
= 3.0 min @ IC = 1.0 A,
f = 1.0 MHz
MAXIMUM RATINGS
Rating
Symbol
TIP35A
TIP36A
TIP35B
TIP36B
TIP35C
TIP36C
Unit
CollectorEmitter Voltage
VCEO
60 V
80 V
100 V
Vdc
CollectorBase Voltage
VCB
60 V
80 V
100 V
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current -- Continuous
Peak (1)
IC
25
40
Adc
Base Current -- Continuous
IB
5.0
Adc
Total Power Dissipation
@ TC = 25
_
C
Derate above 25
_
C
PD
125
1.0
Watts
W/
_
C
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to + 150
_
C
Unclamped Inductive Load
ESB
90
mJ
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.0
_
C/W
JunctionToFreeAir Thermal Resistance
R
JA
35.7
_
C/W
(1) Pulse Test: Pulse Width = 10 ms, Duty Cycle
v
10%.
Figure 1. Power Derating
TC, CASE TEMPERATURE (
C)
0
125
0
25
175
75
100
75
100
50
125
25
150
P
D
, POWER DISSIP
A
TION (W
A
TTS)
50
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TIP35A/D
Motorola, Inc. 1996
TIP35A
TIP35B
TIP35C
TIP36A
TIP36B
TIP36C
25 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60 100 VOLTS
125 WATTS
*Motorola Preferred Device
*
NPN
PNP
*
*
*
CASE 340D02
TO218AC
REV 1
TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1)
(IC = 30 mA, IB = 0)
TIP35A, TIP36A
TIP35B, TIP36B
TIP35C, TIP36C
VCEO(sus)
60
80
100
--
--
--
Vdc
CollectorEmitter Cutoff Current
(VCE = 30 V, IB = 0)
TIP35A, TIP36A
(VCE = 60 V, IB = 0)
TIP35B, TIP35C, TIP36B, TIP36C
ICEO
--
--
1.0
1.0
mA
CollectorEmitter Cutoff Current
(VCE = Rated VCEO, VEB = 0)
ICES
--
0.7
mA
EmitterBase Cutoff Current
(VEB = 5.0 V, IC = 0)
IEBO
--
1.0
mA
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 1.5 A, VCE = 4.0 V)
(IC = 15 A, VCE = 4.0 V)
hFE
25
15
--
75
--
CollectorEmitter Saturation Voltage
(IC = 15 A, IB = 1.5 A)
(IC = 25 A, IB = 5.0 A)
VCE(sat)
--
--
1.8
4.0
Vdc
BaseEmitter On Voltage
(IC = 15 A, VCE = 4.0 V)
(IC = 25 A, VCE = 4.0 V)
VBE(on)
--
--
2.0
4.0
Vdc
DYNAMIC CHARACTERISTICS
SmallSignal Current Gain
(IC = 1.0 A, VCE = 10 V, f = 1.0 kHz)
hfe
25
--
--
CurrentGain -- Bandwidth Product
(IC = 1.0 A, VCE = 10 V, f = 1.0 MHz)
fT
3.0
--
MHz
(1) Pulse Test: Pulse Width = 300
s, Duty Cycle
v
2.0%.
Figure 2. Switching Time Equivalent Test Circuits
0.3
Figure 3. TurnOn Time
IC, COLLECTOR CURRENT (AMPERES)
0.02
1.0
30
0.07
1.0
10
TJ = 25
C
IC/IB = 10
VCC = 30 V
VBE(off) = 2 V
t, TIME
(
s
)
0.5
0.3
0.1
0.05
0.5
3.0
5.0
0.03
0.7
2.0
0.7
7.0
tr
0.2
2.0
20
td
(PNP)
(NPN)
TURNON TIME
TURNOFF TIME
+ 2.0 V
0
tr
20 ns
11.0 V
10 TO 100
S
3.0
RL
30 V
VCC
DUTY CYCLE
2.0%
10
RB
TO SCOPE
tr
20 ns
VBB
+ 4.0 V
FOR CURVES OF FIGURES 3 & 4, RB & RL ARE VARIED.
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN, REVERSE ALL POLARITIES.
0
+ 9.0 V
11.0 V
10 to 100
s
tr
20 ns
DUTY CYCLE
2.0%
3.0
RL
30 V
VCC
10
RB
TO SCOPE
tr
20 ns
TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C
3
Motorola Bipolar Power Transistor Device Data
0.5
1.0
2.0
7.0
0.3
3.0
5.0
0.7
IC, COLLECTOR CURRENT (AMPERES)
Figure 4. TurnOff Time
10
t, TIME
(
s
)
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10
20
30
TJ = 25
C
VCC = 30 V
IC/IB = 10
IB1 = IB2
ts
tf
(PNP)
(NPN)
ts
tf
IC, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT
GAIN
Figure 5. DC Current Gain
200
500
0.2
0.5
2.0
100
0.1
100
50
20
10
1.0
VCE = 4.0 V
TJ = 25
C
5.0
10
20
5.0
50
PNP
NPN
1000
2.0
1.0
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 6 is based on TC = 25
_
C; TJ(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC
w
25
_
C. Second breakdown limitations do not der-
ate the same as thermal limitations.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turnoff, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltagecurrent conditions during re-
verse biased turnoff. This rating is verified under clamped
conditions so that the device is never subjected to an ava-
lanche mode. Figure 7 gives RBSOA characteristics.
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
7.0
20
1.0
50
100
0.2
0
0.5
SECONDARY BREAKDOWN
THERMAL LIMIT
BONDING WIRE LIMIT
1.0 ms
dc
300
s
2.0
1.0
100
30
I C
, COLLECT
OR
CURRENT
(AMPS)
10 ms
Figure 6. Maximum Rated Forward Bias
Safe Operating Area
50
20
10
5.0
0.3
2.0
3.0
5.0
10
30
70
TC = 25
C
TIP35A, 36A
TIP35B, 36B
TIP35C, 36C
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
40
60
0
80
100
5.0
0
15
20
40
30
I C
, COLLECT
OR
CURRENT
(AMPS)
Figure 7. Maximum Rated Forward Bias
Safe Operating Area
25
10
10
20
30
50
70
90
TJ
100
C
TIP35A
TIP36A
TIP35B
TIP36B
TIP35C
TIP36C
TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C
4
Motorola Bipolar Power Transistor Device Data
Figure 8. Inductive Load Switching
TEST CIRCUIT
VOLTAGE AND CURRENT WAVEFORMS
NOTES:
A. L1 and L2 are 10 mH, 0.11
, Chicago Standard Transformer Corporation C2688, or equivalent.
B. Input pulse width is increased until ICM = 3.0 A.
C. For NPN, reverse all polarities.
INPUT
50
MJE180
RBB1
20
RBB2 = 100
VBB2 = 0
VBB1 = 10 V
VCE MONITOR
L1
(SEE NOTE A)
L2
(SEE NOTE A)
TUT
VCC = 10 V
IC MONITOR
+
RS = 0.1
50
+
5.0 V
0
3.0 A
10 V
tw = 6.0 ms
(SEE NOTE B)
INPUT
VOLTAGE
COLLECTOR
CURRENT
COLLECTOR
VOLTAGE
V(BR)CER
0
0
100 ms
TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C
5
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 340D02
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
A
D
V
G
K
S
L
U
B
Q
E
C
J
H
DIM
MIN
MAX
MIN
MAX
INCHES
MILLIMETERS
A
20.35
0.801
B
14.70
15.20
0.579
0.598
C
4.70
4.90
0.185
0.193
D
1.10
1.30
0.043
0.051
E
1.17
1.37
0.046
0.054
G
5.40
5.55
0.213
0.219
H
2.00
3.00
0.079
0.118
J
0.50
0.78
0.020
0.031
K
31.00 REF
1.220 REF
L
16.20
0.638
Q
4.00
4.10
0.158
0.161
S
17.80
18.20
0.701
0.717
U
4.00 REF
0.157 REF
V
1.75 REF
0.069
1
2
3
4
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
TIP35A TIP35B TIP35C TIP36A TIP36B TIP36C
6
Motorola Bipolar Power Transistor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola
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