1
Motorola Bipolar Power Transistor Device Data
Complementary Silicon Plastic
Power Transistors
. . . designed for use in general purpose amplifier and switching applications.
CollectorEmitter Saturation Voltage --
VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc
CollectorEmitter Sustaining Voltage --
VCEO(sus) = 60 Vdc (Min) -- TIP41A, TIP42A
VCEO(sus)
= 80 Vdc (Min) -- TIP41B, TIP42B
VCEO(sus)
= 100 Vdc (Min) -- TIP41C, TIP42C
High Current Gain -- Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
Compact TO220 AB Package
*MAXIMUM RATINGS
Rating
Symbol
TIP41A
TIP42A
TIP41B
TIP42B
TIP41C
TIP42C
Unit
CollectorEmitter Voltage
VCEO
60
80
100
Vdc
CollectorBase Voltage
VCB
60
80
100
Vdc
EmitterBase Voltage
VEB
5.0
Vdc
Collector Current -- Continuous
Peak
IC
6
10
Adc
Base Current
IB
2.0
Adc
Total Power Dissipation
@ TC = 25
_
C
Derate above 25
_
C
PD
65
0.52
Watts
W/
_
C
Total Power Dissipation
@ TA = 25
_
C
Derate above 25
_
C
PD
2.0
0.016
Watts
W/
_
C
Unclamped Inductive Load Energy (1)
E
62.5
mJ
Operating and Storage Junction
Temperature Range
TJ, Tstg
65 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
R
JA
62.5
_
C/W
Thermal Resistance, Junction to Case
R
JC
1.92
_
C/W
(1) IC = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100
.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by TIP41A/D
Motorola, Inc. 1995
TIP41A
TIP41B
TIP41C
TIP42A
TIP42B
TIP42C
6 AMPERE
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 80 100 VOLTS
65 WATTS
*Motorola Preferred Device
*
NPN
PNP
*
*
*
CASE 221A06
TO220AB
REV 1
TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (1)
TIP41A, TIP42A
(IC = 30 mAdc, IB = 0)
TIP41B, TIP42B
TIP41C, TIP42C
VCEO(sus)
60
80
100
--
--
--
Vdc
Collector Cutoff Current
TIP41A, TIP42A
(VCE = 30 Vdc, IB = 0)
TIP41B, TIP41C
(VCE = 60 Vdc, IB = 0)
TIP42B, TIP42C
ICEO
--
--
--
0.7
0.7
0.7
mAdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB = 0)
TIP41A, TIP42A
(VCE = 80 Vdc, VEB = 0)
TIP41B, TIP42B
(VCE = 100 Vdc, VEB = 0)
TIP41C, TIP42C
ICES
--
--
--
400
400
400
Adc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
--
1.0
mAdc
ON CHARACTERISTICS (1)
DC Current Gain (IC = 0.3 Adc, VCE = 4.0 Vdc)
DC Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc)
hFE
30
15
--
75
--
CollectorEmitter Saturation Voltage (IC = 6.0 Adc, IB = 600 mAdc)
VCE(sat)
--
1.5
Vdc
BaseEmitter On Voltage (IC = 6.0 Adc, VCE = 4.0 Vdc)
VBE(on)
--
2.0
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain -- Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT
3.0
--
MHz
SmallSignal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe
20
--
--
(1) Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2.0%.
Figure 1. Power Derating
T, TEMPERATURE (
C)
0
100
0
20
160
40
60
60
80
40
140
80
Figure 2. Switching Time Test Circuit
0.06
Figure 3. TurnOn Time
IC, COLLECTOR CURRENT (AMP)
0.02
0.4
6.0
0.07
1.0
4.0
TJ = 25
C
VCC = 30 V
IC/IB = 10
t,
TIME (
s)
0.5
0.3
0.1
0.05
0.1
0.6
1.0
td @ VBE(off)
5.0 V
0.03
0.7
2.0
0.2
2.0
tr
20
120
P
D
, POWER DISSIP
A
TION (W
A
TTS)
TC
TC
0
1.0
2.0
3.0
4.0
TA
TA
+11 V
25
s
0
9.0 V
RB
4 V
D1
SCOPE
VCC
+ 30 V
RC
tr, tf
10 ns
DUTY CYCLE = 1.0%
RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB
100 mA
MSD6100 USED BELOW IB
100 mA
0.2
TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C
3
Motorola Bipolar Power Transistor Device Data
t, TIME (ms)
1.0
0.01
0.01
0.1
r(t)
,
TRANSIENT
THERMAL
RESIST
ANCE (NORMALIZED)
1.0
1.0
100
Z
JC(t) = r(t) R
JC
R
JC = 1.92
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) TC = P(pk) Z
JC(t)
P(pk)
t1
t2
SINGLE PULSE
1.0 k
D = 0.5
0.2
0.05
DUTY CYCLE, D = t1/t2
Figure 4. Thermal Response
0.1
0.05
0.02
0.01
0.03
0.02
0.07
0.5
0.3
0.2
0.7
0.02
0.05
0.2
0.5
2.0
5.0
200
500
10
20
50
VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
10
20
5.0
60
100
Figure 5. ActiveRegion Safe Operating Area
0.2
0.1
0.5
SECONDARY BREAKDOWN LTD
BONDING WIRE LTD
THERMAL LIMITATION @ TC = 25
C
(SINGLE PULSE)
1.0 ms
2.0
1.0
10
5.0
I C
, COLLECT
OR CURRENT
(AMP)
0.5 ms
CURVES APPLY BELOW RATED VCEO
3.0
0.3
40
80
5.0 ms
TJ = 150
C
TIP41A, TIP42A
TIP41B, TIP42B
TIP41C, TIP42C
There are two limitations on the power handling ability of a
transistor: average junction temperature and second break-
down. Safe operating area curves indicate IC VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150
_
C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v
150
_
C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.1
0.4
0.6
4.0
0.06
1.0
2.0
0.2
IC, COLLECTOR CURRENT (AMP)
Figure 6. TurnOff Time
5.0
t,
TIME (
s)
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
6.0
1.0
3.0
5.0
20
0.5
10
2.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitance
300
C, CAP
ACIT
ANCE (pF)
200
100
70
50
30
30
50
TJ = 25
C
VCC = 30 V
IC/IB = 10
IB1 = IB2
Cib
Cob
3.0
ts
tf
TJ = 25
C
TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C
4
Motorola Bipolar Power Transistor Device Data
V
CE
, COLLECT
OREMITTER VOL
T
AGE (VOL
TS)
TJ, JUNCTION TEMPERATURE (
C)
103
0.3
101
100
102
102
101
103
10 M
100 k
10 k
0.1 k
1.0 M
1.0 k
IB, BASE CURRENT (mA)
IC, COLLECTOR CURRENT (AMP)
h
FE
, DC CURRENT
GAIN
Figure 8. DC Current Gain
Figure 9. Collector Saturation Region
IC, COLLECTOR CURRENT (AMP)
300
500
0.1
0.2
0.4
6.0
0.06
100
70
50
30
10
7.0
0.3
VBE, BASEEMITTER VOLTAGE (VOLTS)
Figure 10. "On" Voltages
VCE = 2.0 V
5.0
1.0
2.0
0.6
1.6
2.0
20
30
100
1000
10
0.8
0.4
50
0
300
500
200
25
C
TJ = 150
C
55
C
1.2
2.0
0.06
IC, COLLECTOR CURRENT (AMP)
1.6
0.8
1.2
0.4
0
0.1
0.2 0.3 0.4
0.6
1.0
+ 2.5
IC = 1.0 A
20
60
80
100
120
160
140
40
V
, VOL
T
AGE (VOL
TS)
TJ = 25
C
2.5 A
5.0 A
2.0 3.0 4.0
6.0
VBE(sat) @ IC/IB = 10
VBE @ VCE = 4.0 V
VCE(sat) @ IC/IB = 10
V
,
TEMPERA
TURE COEFFICIENTS (mV/
C)
+ 2.0
+ 1.5
+ 1.0
+ 0.5
0
0.5
1.0
1.5
2.0
2.5
*APPLIES FOR IC/IB
hFE/4
*
VC FOR VCE(sat)
VB FOR VBE
Figure 11. Temperature Coefficients
, COLLECT
OR CURRENT
(
A)
I C
0.2 0.1
0
+ 0.1 + 0.2 + 0.3 + 0.4 + 0.5 + 0.6
Figure 12. Collector CutOff Region
Figure 13. Effects of BaseEmitter Resistance
VCE = 30 V
TJ = 150
C
100
C
25
C
REVERSE
FORWARD
IC = ICES
R
BE
, EXTERNAL
BASEEMITTER RESIST
ANCE (OHMS)
VCE = 30 V
IC = 10 x ICES
IC
ICES
IC = 2 x ICES
(TYPICAL ICES VALUES
OBTAINED FROM FIGURE 12)
200
20
4.0
0.06
0.1
0.2 0.3
0.5
1.0
2.0 3.0 4.0
6.0
+ 25
C to + 150
C
55
C to + 25
C
+ 25
C to + 150
C
55
C to + 25
C
+ 0.7
TJ = 25
C
TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C
5
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 221A06
TO220AB
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.018
0.025
0.46
0.64
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
1.15
Z
0.080
2.04
B
Q
H
Z
L
V
G
N
A
K
F
1
2 3
4
D
SEATING
PLANE
T
C
S
T
U
R
J
TIP41A TIP41B TIP41C TIP42A TIP42B TIP42C
6
Motorola Bipolar Power Transistor Device Data
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
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TIP41A/D
*TIP41A/D*
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