Transistors
1
Publication date: February 2004
SJC00001CED
2SA0683
(2SA683)
, 2SA0684
(2SA684)
Silicon PNP epitaxial planar type
For low-frequency power amplification and driver amplification
Complementary to 2SC1383, 2SC1384
Features
Allowing supply with the radial taping
Absolute Maximum Ratings T
a
= 25C
Electrical Characteristics T
a
= 25C 3C
5.9
0.2
0.7
0.1
4.9
0.2
8.6
0.2
0.7
+0.3 0.2
13.5
0.5
2.54
0.15
(3.2)
(1.27)
(1.27)
0.45
+0.2
0.1
0.45
+0.2
0.1
1
3
2
Unit: mm
1: Emitter
2: Collector
3: Base
EIAJ: SC-51
TO-92L-A1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
h
FE
85 to 170
120 to 240
170 to 340
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SA0683
V
CBO
-30
V
(Emitter open)
2SA0684
-60
Collector-emitter voltage 2SA0683
V
CEO
-25
V
(Base open)
2SA0684
-50
Emitter-base voltage (Collector open)
V
EBO
-5
V
Collector current
I
C
-1
A
Peak collector current
I
CP
-1.5
A
Collector power dissipation
P
C
1
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage
2SA0683
V
CBO
I
C
= -10 A, I
E
= 0
-30
V
(Emitter open)
2SA0684
-60
Collector-emitter voltage
2SA0683
V
CEO
I
C
= -2 mA, I
B
= 0
-25
V
(Base open)
2SA0684
-50
Emitter-base voltage (Collector open)
V
EBO
I
E
= -10 A, I
C
= 0
-5
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= -20 V, I
E
= 0
- 0.1
A
Forward current transfer ratio
*1
h
FE1
*2
V
CE
= -10 V, I
C
= -500 mA
85
340
h
FE2
V
CE
= -5 V, I
C
= -1 A
50
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -500 mA, I
B
= -50 mA
- 0.2
- 0.4
V
Base-emitter saturation voltage
V
BE(sat)
I
C
= -500 mA, I
B
= -50 mA
- 0.85 -1.20
V
Transition frequency
f
T
V
CB
= -10 V, I
E
= 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
C
ob
V
CB
= -10 V, I
E
= 0, f = 1 MHz
20
30
pF
(Common base, input open circuited)
Note) The part numbers in the parenthesis show conventional part number.
2SA0683, 2SA0684
2
SJC00001CED
V
CE(sat)
I
C
V
BE(sat)
I
C
h
FE
I
C
P
C
T
a
I
C
V
CE
I
C
I
B
f
T
I
E
C
ob
V
CB
V
CER
R
BE
0
160
40
120
80
0
1.2
1.0
0.8
0.6
0.4
0.2
Collector power dissipation P
C
(W
)
Ambient temperature T
a
(
C)
0
-10
-8
-2
-6
-4
0
-1.5
-1.25
-1.0
- 0.75
- 0.50
- 0.25
I
B
= -10 mA
-9 mA
-8 mA
-7 mA
-6 mA
-5 mA
-4 mA
-3 mA
-2 mA
-1 mA
T
a
= 25C
Collector current I
C
(A
)
Collector-emitter voltage V
CE
(V)
0
-12
-10
-8
-2
-6
-4
0
-1.2
-1.0
- 0.8
- 0.6
- 0.4
- 0.2
V
CE
= -10 V
T
a
= 25C
Base current I
B
(mA)
Collector current I
C
(mA
)
- 0.01
- 0.1
-1
-10
- 0.01
- 0.1
-1
-10
-100
T
a
= 75C
25
C
-25C
I
C
/ I
B
= 10
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(A)
- 0.01
- 0.1
-1
-10
- 0.01
- 0.1
-1
-10
-100
I
C
/ I
B
= 10
T
a
= -25C
25
C
75
C
Base-emitter saturation voltage V
BE(sat)
(V
)
Collector current I
C
(A)
- 0.01
- 0.1
-1
-10
0
600
500
400
300
200
100
V
CE
= -10 V
T
a
= 75C
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(A)
1
10
100
0
200
160
120
80
40
V
CB
= -10 V
T
a
= 25C
Transition frequency f
T
(MHz
)
Emitter current I
E
(mA)
-1
-10
-100
0
50
40
30
20
10
I
E
= 0
f
= 1 MHz
T
a
= 25C
Collector-base voltage V
CB
(V)
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
0.1
1
10
100
0
-120
-100
-80
-60
-40
-20
I
C
= -10 mA
T
a
= 25C
2SA0684
2SA0683
Base-emitter resistance R
BE
(k
)
Collector-emitter voltage
(Resistor between B and E)
V
CER
(V)
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2003 SEP
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