Power Transistors
188
2SC2497, 2SC2497A
Silicon NPN epitaxial planar type
For low-frequency power amplification
Complementary to 2SA1096 and 2SA1096A
I Features
High collector to emitter voltage V
CEO
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
I Absolute Maximum Ratings T
C
= 25C
1 : Emitter
2 : Collector
3 : Base
TO-126B-A1 Package
Unit: mm
I Electrical Characteristics T
C
= 25C
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
70
V
Collector to
2SC2497
V
CEO
50
V
emitter voltage
2SC2497A
60
Emitter to base voltage
V
EBO
5
V
Peak collector current
I
CP
3
A
Collector current
I
C
1.5
A
Collector power dissipation
P
C
1.2
*1
W
5
*2
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
= 20 V, I
E
= 0
1
A
I
CEO
V
CE
= 10 V, I
B
= 0
100
A
Emitter cutoff current
I
EBO
V
EB
= 5 V, I
C
= 0
10
A
Collector to base voltage
V
CBO
I
C
= 1 mA, I
E
= 0
70
V
Collector to emitter
2SC2497
V
CEO
I
C
= 2 mA, I
B
= 0
50
V
voltage
2SC2497A
60
Forward current transfer ratio
*
h
FE
V
CE
= 5 V, I
C
= 1 A
80
220
Collector to emitter saturation voltage
V
CE(sat)
I
C
= 1.5 A, I
B
= 0.15 A
1
V
Base to emitter saturation voltage
V
BE(sat)
I
C
= 1.5 A, I
B
= 0.15 A
1.5
V
Transition frequency
f
T
V
CB
= 5 V, I
E
=
- 0.5 A, f = 200 MHz
150
MHz
Collector output capacitance
C
ob
V
CB
= 20 V, I
E
= 0, f = 1 MHz
35
pF
Rank
R
S
h
FE
80 to 160
120 to 220
8.0
+0.5
0.1
1.9
0.1
3.05
0.1
3.8
0.3
11.0
0.5
16.0
1.0
3.2
0.2
0.75
0.1
0.5
0.1
2.3
0.2
4.6
0.2
0.5
0.1
1.76
0.1
1
2
3
3.16
0.1
Note) *1: Without heat sink
*2: With a 100
100 2 mm A1 heat sink
Note) *: Rank classification
Power Transistors
189
2SC2497, 2SC2497A
V
BE(sat)
I
C
h
FE
I
C
f
T
I
E
P
C
T
a
I
C
V
CE
V
CE(sat)
I
C
C
ob
V
CB
V
CER
R
BE
I
CBO
T
a
0
6
5
4
3
2
1
0
40
80
120
160
(1)With a 100
1002mm
Al heat sink
(2)Without heat sink
(1)
(2)
Ambient temperature T
a
(C)
Collector power dissipation P
C
(W
)
0
1.0
3.0
2.0
4.0
3.5
2.5
1.5
0.5
0
12
2
10
4
8
6
T
C
=25C
45mA
40mA
30mA
35mA
20mA
25mA
10mA
5mA
15mA
I
B
=50mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.01
0.03
0.1
0.3
1
3
10
0.01
0.03
0.1
0.3
1
3
I
C
/I
B
=10
25C
25C
T
C
=100C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.03
0.01
1
0.1
0.03
0.3
0.1
0.3
1
3
10
3
I
C
/I
B
=10
T
C
=25C
25C
100C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.01
3
1
0.1
0.03
0.3
1
3
10
30
100
300
1000
V
CE
=5V
T
C
=100C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.01 0.03
0.1
0.3
1
3
10
0
240
200
160
120
80
40
V
CB
=5V
f=200MHz
T
C
=25C
Emitter current I
E
(A)
Transition frequency f
T
(MHz
)
0
1
240
200
160
120
80
40
3
10
30
100
I
E
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0.1
0.3
1
3
10
30
100
0
20
40
60
80
100
10
30
50
70
90
I
C
=10mA
T
C
=25C
Base to emitter resistance R
BE
(k
)
Collector to emitter voltage V
CER
(V
)
1
10
10
2
10
3
10
4
180
140
100
60
20
0
40
80
120
160
V
CB
=40V
Ambient temperature T
a
(C)
I
CBO
(T
a
)
I
CBO
(T
a
=25
C
)
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2001 MAR
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