1
Transistor
2SC2206
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1254
s
Features
q
Optimum for RF amplification of FM/AM radios.
q
High transition frequency f
T
.
q
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
EIAJ:SC71
3:Emitter
M Type Mold Package
6.9
0.1
0.55
0.1
0.45
0.05
1.0
0.1
1.0
2.5
0.1
1.0
1.5
1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5
0.1
2.0
0.2
2.4
0.2
1.25
0.05
4.1
0.2
4
.5
0.1
2.5
2.5
1
2
3
Symbol
V
CBO
V
CEO
C
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
5
30
400
150
55 ~ +150
Unit
V
V
V
mA
mW
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
Common emitter reverse transfer capacitance
Reverse transfer impedance
Symbol
V
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
V
BE
f
T
NF
C
re
Z
rb
Conditions
I
C
= 10
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CB
= 10V, I
E
= 1mA
I
C
= 10mA, I
B
= 1mA
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
E
= 1mA, f = 200MHz
V
CB
= 10V, I
E
= 1mA, f = 5MHz
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
V
CB
= 10V, I
E
= 1mA, f = 2MHz
min
30
20
5
70
150
typ
0.1
0.7
300
2.8
max
220
4
1.5
50
Unit
V
V
V
V
V
MHz
dB
pF
*
h
FE
Rank classification
Rank
B
C
h
FE
70 ~ 140
110 ~ 220
2
Transistor
2SC2206
P
C
-- Ta
I
C
-- V
CE
I
C
-- I
B
I
B
-- V
BE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
Z
rb
-- I
E
0
160
40
120
80
140
20
100
60
0
500
400
300
200
100
450
350
250
150
50
Ambient temperature Ta (C)
Collector power dissipation P
C
(mW
)
0
18
6
12
0
12
10
8
6
4
2
Ta=25C
I
B
=100
A
20
A
40
A
60
A
80
A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0
100
80
20
60
40
0
15.0
12.5
10.0
7.5
5.0
2.5
V
CE
=10V
Ta=25C
Base current I
B
(
A)
Collector current I
C
(mA
)
0
1.0
0.8
0.2
0.6
0.4
0
120
100
80
60
40
20
V
CE
=10V
Ta=25C
Base to emitter voltage V
BE
(V)
Base current I
B
(
A
)
0
2.0
1.6
0.4
1.2
0.8
0
60
50
40
30
20
10
V
CE
=10V
Ta=75C
25C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA
)
0.1
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=75C
25C
25C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
1
10
100
0.3
3
30
0
240
200
160
120
80
40
V
CE
=10V
Ta=75C
25C
25C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
0
400
300
100
250
350
200
50
150
Ta=25C
V
CB
=10V
6V
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
0.1
0.3
1
3
10
0
60
50
40
30
20
10
V
CB
=10V
f=2MHz
Ta=25C
Emitter current I
E
(mA)
Reverse transfer impedance Z
rb
(
)
3
Transistor
2SC2206
C
re
-- V
CE
PG -- I
E
NF -- I
E
b
ie
-- g
ie
b
re
-- g
re
b
fe
-- g
fe
b
oe
-- g
oe
0.1
1
10
100
0.3
3
30
0
3.0
2.5
2.0
1.5
1.0
0.5
f=10.7MHz
Ta=25C
I
C
=3mA
1mA
Collector to emitter voltage V
CE
(V)
Common emitter reverse transfer capacitance C
re
(pF
)
0.1
1
10
100
0.3
3
30
0
24
20
16
12
8
4
f=100MHz
V
CE
=10V
Ta=25C
Emitter current I
E
(mA)
Power gain PG
(dB
)
0.1
0.3
1
3
10
0
12
10
8
6
4
2
V
CB
=6V
f=100MHz
R
g
=50
Ta=25C
Emitter current I
E
(mA)
Noise figure NF
(dB
)
0
40
32
8
24
16
0
24
20
16
12
8
4
y
ie
=g
ie
+jb
ie
V
CE
=10V
f=10.7MHz
I
E
=1mA
2mA
4mA
7mA
58
100
Input conductance g
ie
(mS)
Input susceptance b
ie
(mS
)
0.5
0
0.1
0.4
0.2
0.3
0.6
0
10 0.1
0.2
0.3
0.4
0.5
y
re
=g
re
+jb
re
V
CE
=10V
f=10.7MHz
I
E
=1mA
58
100
Reverse transfer conductance g
re
(mS)
Reverse transfer susceptance b
re
(mS
)
0
100
80
20
60
40
120
0
20
40
60
80
100
y
fe
=g
fe
+jb
fe
V
CE
=10V
f=10.7MHz
100
10.7
0.1mA
1mA
2mA
I
E
=4mA
100
100
58
58
58
Forward transfer conductance g
fe
(mS)
Forward transfer susceptance b
fe
(mS
)
0
0.5
0.4
0.1
0.3
0.2
0
1.2
1.0
0.8
0.6
0.4
0.2
y
oe
=g
oe
+jb
oe
V
CE
=10V
f=10.7MHz
I
E
=1mA
58
100
Output conductance g
oe
(mS)
Output susceptance b
oe
(mS
)
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