1
Transistor
2SA1309A
Silicon PNP epitaxial planer type
For low-frequency amplification
Complementary to 2SC3311A
s
Features
q
High foward current transfer ratio h
FE
.
q
Allowing supply with the radial taping.
q
Optimum for high-density mounting.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
EIAJ:SC72
3:Base
New S Type Package
4.0
0.2
marking
2.54
0.15
1.27
1.27
3.0
0.2
15.6
0.5
2.0
0.2
0.7
0.1
0.45
0.1
1
2
3
+0.2
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
50
7
200
100
300
150
55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
I
C
= 10
A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 50mA, I
B
= 5mA
V
CB
= 10V, I
E
= 1mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
60
50
7
160
typ
80
3.5
max
100
1
460
0.3
Unit
nA
A
V
V
V
V
MHz
pF
*
h
FE
Rank classification
Rank
Q
R
S
h
FE
160 ~ 260
210 ~ 340
290 ~ 460
2
Transistor
2SA1309A
0
160
40
120
80
140
20
100
60
50
500
450
400
350
300
200
250
150
100
Ambient temperature Ta (C)
Collector power dissipation P
C
(mW
)
0
12
10
8
2
6
4
0
120
100
80
60
40
20
Ta=25C
250
A
200
A
150
A
100
A
50
A
I
B
=300
A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0
2.0
1.6
0.4
1.2
0.8
0
240
200
160
120
80
40
V
CE
=5V
Ta=75C
25C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA
)
1
10
100
1000
3
30
300
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=10
Ta=75C
25C
25C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
1
10
100
1000
3
30
300
0
600
500
400
300
200
100
V
CE
=5V
Ta=75C
25C
25C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
0
160
120
40
100
140
80
20
60
V
CB
=10V
Ta=25C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
10
8
6
4
2
9
7
5
3
1
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
P
C
-- Ta
I
C
-- V
CE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
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