1
Transistor
2SC3314
Silicon NPN epitaxial planer type
For high-frequency amplification
Complementary to 2SA1323
s
Features
q
Optimum for high-density mounting.
q
Allowing supply with the radial taping.
q
Optimum for RF amplification of FM/AM radios.
q
High transition frequency f
T
.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
EIAJ:SC72
3:Base
New S Type Package
4.0
0.2
marking
2.54
0.15
1.27
1.27
3.0
0.2
15.6
0.5
2.0
0.2
0.7
0.1
0.45
0.1
1
2
3
+0.2
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
30
20
5
30
300
150
55 ~ +150
Unit
V
V
V
mA
mW
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
Common emitter reverse transfer capacitance
Reverse transfer impedance
Symbol
V
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
V
BE
f
T
NF
C
re
Z
rb
Conditions
I
C
= 10
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CE
= 10V, I
C
= 1mA
I
C
= 10mA, I
B
= 1mA
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
E
= 1mA, f = 200MHz
V
CB
= 10V, I
E
= 1mA, f = 5MHz
V
CE
= 10V, I
C
= 1mA, f = 10.7MHz
V
CB
= 10V, I
E
= 1mA, f = 2MHz
min
30
20
5
70
150
typ
0.1
0.7
300
2.8
max
220
4.0
1.5
50
Unit
V
V
V
V
V
MHz
dB
pF
*
h
FE
Rank classification
Rank
B
C
h
FE
70 ~ 140
110 ~ 220
2
Transistor
2SC3314
P
C
-- Ta
I
C
-- V
CE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
Z
rb
-- I
E
C
re
-- V
CE
PG -- I
E
0
160
40
120
80
140
20
100
60
0
500
400
300
200
100
Ambient temperature Ta (C)
Collector power dissipation P
C
(mW
)
0
12
10
8
2
6
4
0
240
200
160
120
80
40
Ta=25C
80
A
60
A
40
A
20
A
I
B
=100
A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0
2.0
1.6
0.4
1.2
0.8
0
60
50
40
30
20
10
V
CE
=10V
Ta=75C
25C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA
)
0.1
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=75C
25C
25C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
1
10
100
0.3
3
30
0
240
200
160
120
80
40
V
CE
=10V
Ta=75C
25C
25C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
0
800
600
200
500
700
400
100
300
Ta=25C
V
CE
=10V
6V
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
0.1
0.3
1
3
10
0
60
50
40
30
20
10
V
CB
=10V
f=2MHz
Ta=25C
Emitter current I
E
(mA)
Reverse transfer impedance Z
rb
(
)
0.1
1
10
100
0.3
3
30
0
3.0
2.5
2.0
1.5
1.0
0.5
f=10.7MHz
Ta=25C
I
C
=3mA
1mA
Collector to emitter voltage V
CE
(V)
Common emitter reverse transfer capacitance C
re
(pF
)
0.1
1
10
100
0.3
3
30
0
24
20
16
12
8
4
V
CE
=10V
f=100MHz
Ta=25C
Emitter current I
E
(mA)
Power gain PG
(dB
)
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