Transistors
1
Publication date: November 2002
SJC00026BED
2SA1738
Silicon PNP epitaxial planar type
For high speed switching
Features
High speed switching (Pair with 2SC3757)
Low collector-emitter saturation voltage V
CE(sat)
Mini type package, allowing downsizing of the equipment and au-
tomatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
-15
V
Collector-emitter voltage (Base open)
V
CEO
-15
V
Emitter-base voltage (Collector open)
V
EBO
-4
V
Collector current
I
C
-50
mA
Peak collector current
I
CP
-100
mA
Collector power dissipation
P
C
200
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= -8 V, I
E
= 0
- 0.1
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= -3 V, I
C
= 0
- 0.1
A
Forward current transfer ratio
h
FE1
*
V
CE
= -1 V, I
C
= -10 mA
50
150
h
FE2
V
CE
= -1 V, I
C
= -1 mA
30
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -10 mA, I
B
= -1 mA
- 0.1
- 0.2
V
Transition frequency
f
T
V
CB
= -10 V, I
E
= 10 mA, f = 200 MHz
800
1 500
MHz
Collector output capacitance
C
ob
V
CB
=
-5 V, I
E
= 0, f = 1 MHz
1
pF
(Common base, input open circuited)
Turn-on time
t
on
Refer to the switching time measurement circuit
12
ns
Turn-off time
t
off
20
ns
Storage time
t
stg
19
ns
Electrical Characteristics T
a
= 25C 3C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
0.40
+0.10
0.05
(0.65)
1.50
+0.25 0.05
2.8
+0.2 0.3
2
1
3
(0.95) (0.95)
1.9
0.1
2.90
+0.20
0.05
0.16
+0.10
0.06
0.4
0.2
5
10
0 to 0.1
1.1
+0.2 0.1
1.1
+0.3 0.1
Rank
Q
R
h
FE1
50 to 120
90 to 150
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC-59
Mini3-G1 Package
Marking Symbol: AK
2SA1738
2
SJC00026BED
I
C
V
CE
V
CE(sat)
I
C
V
BE(sat)
I
C
P
C
T
a
h
FE
I
C
f
T
I
E
C
ob
V
CB
Switching time measurement circuit
t
on
, t
off
Test circuit
t
stg
Test circuit
508
30
51
V
BB
= -10 V
V
IN
V
CC
= -3 V
V
IN
= 9.0 V
V
IN
= -5.8 V
V
BB
= Ground
V
IN
= 9.8 V
V
BB
= -8.0 V
V
OUT
0.1
F
34
V
IN
0
0
V
OUT
V
IN
V
OUT
90%
90%
90%
10%
10%
t
stg
t
on
t
off
90%
2 k
62
51
V
BB
V
IN
V
CC
= -1.5 V
V
OUT
0.1
F
52
0
160
40
120
80
0
240
200
160
120
80
40
Collector power dissipation P
C
(mW
)
Ambient temperature T
a
(
C)
0
-12
-10
-8
-2
-6
-4
0
-60
-50
-40
-30
-20
-10
T
a
= 25C
-300 A
-500 A
-400 A
-100 A
-200 A
I
B
= -600 A
Collector current I
C
(mA
)
Collector-emitter voltage V
CE
(V)
-1
-10
-100
-1000
- 0.01
- 0.1
-1
-10
-100
I
C
/ I
B
= 10
25
C
-25C
T
a
= 75C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
-1
-10
-100
-1 000
- 0.01
- 0.1
-1
-10
-100
I
C
/ I
B
= 10
25
C
75
C
T
a
= -25C
Base-emitter saturation voltage V
BE(sat)
(V
)
Collector current I
C
(mA)
- 0.1
-1
-10
-100
0
240
200
160
120
80
40
V
CE
= -10 V
T
a
= 75C
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
1
10
100
0
2 400
2 000
1 600
1 200
800
400
V
CB
= -10 V
f
= 200 MHz
T
a
= 25C
Transition frequency f
T
(MHz
)
Emitter current I
E
(mA)
-1
-10
-100
0
2.4
2.0
1.6
1.2
0.8
0.4
I
E
= 0
f
= 1 MHz
T
a
= 25C
Collector-base voltage V
CB
(V)
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
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the latest specifications satisfy your requirements.
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mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
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Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
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2002 JUL
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