1
Transistor
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
EIAJ:SC71
3:Emitter
M Type Mold Package
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
*
T
j
T
stg
Ratings
80
80
5
1
0.5
1
150
55 ~ +150
Unit
V
V
V
A
A
W
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10
A, I
E
= 0
I
C
= 100
A, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
V
CE
= 5V, I
C
= 500mA
I
C
= 300mA, I
B
= 30mA
I
C
= 300mA, I
B
= 30mA
V
CB
= 10V, I
E
= 50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1 MHz
min
80
80
5
130
50
typ
100
0.2
0.85
85
11
max
0.1
330
0.4
1.2
20
Unit
A
V
V
V
V
V
MHz
pF
6.9
0.1
0.55
0.1
0.45
0.05
1.0
0.1
1.0
2.5
0.1
1.0
1.5
1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5
0.1
2.0
0.2
2.4
0.2
1.25
0.05
4.1
0.2
4
.5
0.1
2.5
2.5
1
2
3
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
*
h
FE1
Rank classification
Rank
R
S
h
FE1
130 ~ 220
185 ~ 330
2SA1762
Silicon PNP epitaxial planer type
For low-frequency driver amplification
Complementary to 2SC4606
s
Features
q
High collector to emitter voltage V
CEO
.
q
Optimum for the driver stage of a low-frequency and 25 to 30W
output amplifier.
s
Absolute Maximum Ratings
(Ta=25C)
2
Transistor
2SA1762
0
160
40
120
80
140
20
100
60
0
1.2
1.0
0.8
0.6
0.4
0.2
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
10
8
2
6
4
0
1.2
1.0
0.8
0.6
0.4
0.2
Ta=25C
I
B
=10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0
10
8
2
6
4
0
1.2
1.0
0.8
0.6
0.4
0.2
V
CE
=10V
Ta=25C
Base current I
B
(mA)
Collector current I
C
(A
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
10
I
C
/I
B
=10
Ta=75C
25C
25C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=25C
25C
75C
Collector current I
C
(mA)
Base to emitter saturation voltage V
BE(sat)
(V
)
1
10
100
1000
3
30
300
0
300
250
200
150
100
50
V
CE
=10V
Ta=75C
25C
25C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
1
10
100
1000
3
30
300
0
120
100
80
60
40
20
V
CB
=10V
f=200MHz
Ta=25C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
60
50
40
30
20
10
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0
180
60
120
1
10
10
2
10
3
10
4
V
CB
=20V
Ambient temperature Ta (C)
I
CBO
(Ta
)
I
CBO
(Ta=25C
)
P
C
-- Ta
I
C
-- V
CE
I
C
-- I
B
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
I
CBO
-- Ta
3
Transistor
2SA1762
0
140
60
20
80
120
40
100
1
10
10
2
10
3
10
5
10
4
V
CE
=10V
Ambient temperature Ta (C)
I
CEO
(Ta
)
I
CEO
(Ta=25C
)
0.1
1
10
100
0.3
3
30
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
Single pulse
Ta=25C
t=10ms
t=1s
I
CP
I
C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
I
CEO
-- Ta
Area of safe operation (ASO)
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