Transistors
1
Publication date: March 2003
SJC00031BED
2SA1790
Silicon PNP epitaxial planar type
For low-frequency amplification
Complementary to 2SC4626
Features
High transition frequency f
T
SS-Mini type package allowing downsizing of the equipment and
automatic insertion through the tape packing
Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
-30
V
Collector-emitter voltage (Base open)
V
CEO
-20
V
Emitter-base voltage (Collector open)
V
EBO
-5
V
Collector current
I
C
-30
mA
Collector power dissipation
P
C
125
mW
Junction temperature
T
j
125
C
Storage temperature
T
stg
-55 to +125
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Base-emitter saturation voltage
V
BE
V
CE
= -10 A, I
C
= -1 mA
- 0.7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= -10 V, I
E
= 0
- 0.1
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= -20 V, I
B
= 0
-100
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= -5 V, I
C
= 0
-10
A
Forward current transfer ratio
*
h
FE
V
CE
=
-10 V, I
C
=
-1 mA
70
220
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -10 mA, I
B
= -1 mA
- 0.1
V
Transition frequency
f
T
V
CB
= -10 V, I
E
= 1 mA, f = 200 MHz
150
300
MHz
Noise figure
NF
V
CB
= -10 V, I
E
= 1 mA, f = 5 MHz
2.8
4.0
dB
Reverse transfer impedance
Z
rb
V
CB
= -10 V, I
E
= 1 mA, f = 2 MHz
22
60
Reverse transfer capacitance
C
re
V
CB
= -10 V, I
E
= 1 mA, f = 10.7 MHz
1.2
2.0
pF
(Common emitter)
Electrical Characteristics T
a
= 25C 3C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
1.6
0.15
1.6
0.1
5
1
1.0
0.1
0.75
0.15
0.45
0.1
0 to 0.1
(0.5)
(0.3)
(0.5)
0.8
0.1
(0.4)
0.15
+0.1
0.05
0.2
+0.1
0.05
1
2
3
0.2
0.1
Rank
B
C
h
FE
70 to 140
110 to 220
1: Base
2: Emitter
3: Collector
EIAJ: SC-75
SSMini3-G1 Package
Marking Symbol: E
2SA1790
2
SJC00031BED
h
FE
I
C
f
T
I
E
C
ob
V
CB
P
C
T
a
I
C
V
CE
V
CE(sat)
I
C
C
re
V
CE
G
P
I
C
NF
I
E
0
160
40
120
80
0
150
125
100
75
50
25
Collector power dissipation P
C
(mW
)
Ambient temperature T
a
(
C)
0
-10
-8
-2
-6
-4
0
-30
-25
-20
-15
-10
-5
T
a
= 25C
I
B
= -250 A
-200 A
-150 A
-100 A
-50 A
Collector current I
C
(mA
)
Collector-emitter voltage V
CE
(V)
- 0.1
-1
-10
-100
- 0.01
- 0.1
-1
-10
-100
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
- 0.1
-1
-10
-100
0
120
100
80
60
40
20
V
CE
= -10 V
T
a
= 75C
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
0.1
1
10
100
0
600
500
400
300
200
100
V
CB
= -10 V
T
a
= 25C
Transition frequency f
T
(MHz
)
Emitter current I
E
(mA)
- 0.1
-1
-10
-100
0
6
5
4
3
2
1
f
= 1 MHz
I
E
= 0
T
a
= 25C
Collector-base voltage V
CB
(V)
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
-1
-10
-100
0
5
4
3
2
1
I
C
= -1 mA
f
= 10.7 MHz
T
a
= 25C
Collector-emitter voltage V
CE
(V)
Common emitter reverse transfer capacitance C
re
(
pF
)
- 0.1
-1
-10
-100
0
24
20
16
12
8
4
V
CE
= -10 V
f
= 100 MHz
T
a
= 25C
Power gain G
P
(dB
)
Collector current I
C
(mA)
0.1
1
10
0
5
4
3
2
1
V
CB
= -10 V
f
= 100 MHz
T
a
= 25C
Noise figure NF
(dB
)
Emitter current I
E
(mA)
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and semiconductors described in this material
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
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Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
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2002 JUL
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