Transistors
1
2SA2046
Silicon PNP epitaxial planer type
For DC-DC converter
I Features
Low collector to emitter saturation voltage V
CE(sat)
Mini3-G1 type package, allowing downsizing and thinning of the
equipment and automatic insertion through the tape packing
I Absolute Maximum Ratings T
a
= 25C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
-30
V
Collector to emitter voltage
V
CEO
-20
V
Emitter to base voltage
V
EBO
-5
V
Peak collector current
I
CP
-5
A
Collector current
I
C
-1.5
A
Collector power dissipation
*
P
C
400
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector to base voltage
V
CBO
I
C
= -10 A, I
E
= 0
-30
V
Collector to emitter voltage
V
CEO
I
C
= -1 mA, I
B
= 0
-20
V
Emitter to base voltage
V
EBO
I
E
= -10 A, , I
C
= 0
-5
V
Forward current transfer ratio
*
h
FE
V
CE
= -2 V, I
C
= -100 mA
160
560
Collector to emitter saturation voltage
*
V
CE(sat)
I
C
= -500 mA, I
B
= -25 mA
-50
-150
mV
Collector output capacitance
C
ob
V
CB
= -10 V, I
E
= 0, f = 1 MHz
25
35
pF
Transition frequency
f
T
V
CB
= -10 V, I
E
= 20 mA
170
MHz
f
= 200 MHz
I Electrical Characteristics T
a
= 25C 3C
Marking Symbol: 3Z
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Type Package
Note) *: Measure on the ceramic substrate at 15
15 0.6 mm
3
0.40
+0.10
-0.05
1.45
0.65
0.15
0.65
0.15
1.50
+0.25
-
0.05
2.80
+0.20
-
0.30
2
1
3
0.95
0.95
1.90
0.20
2.90
+0.20
-0.05
0.16
+0.10
-0.06
0.40
0.20
5
10
0
0.1
1.10
+0.20
-
0.10
1.10
+0.30
-
0.10
Note) *: Pulse measurement
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