Power Transistors
1
Publication date: January 2003
SJD00284BED
2SA2057
Silicon PNP epitaxial planar type
Power supply for audio & visual equipments
such as TVs and VCRs
Industrial equipments such as DC-DC converters
Features
High speed switching (t
stg
: storage time/t
f
: fall time is short)
Low collector-emitter saturation voltage V
CE(sat)
Superior forward current transfer ratio h
FE
linearity
TO-220D built-in: Excellent package with withstand voltage 5 kV
guaranteed
Absolute Maximum Ratings T
C
= 25C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
-60
V
Collector-emitter voltage (Base open)
V
CEO
-60
V
Emitter-base voltage (Collector open)
V
EBO
-6
V
Collector current
I
C
-3
A
Peak collector current
*
I
CP
-6
A
Collector power dissipation
P
C
20
W
T
a
= 25C
2.0
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
= -10 mA, I
B
= 0
-60
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= -60 V, I
E
= 0
-100
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= -60 V, I
B
= 0
-100
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= -6 V, I
C
= 0
-1
mA
Forward current transfer ratio
h
FE1
*
V
CE
= -4 V, I
C
= -1 A
120
320
h
FE2
V
CE
= -4 V, I
C
= -3 A
40
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -3 A, I
B
= - 0.375 A
- 0.5
V
Transition frequency
f
T
V
CE
= -10 V, I
C
= - 0.1 A, f = 10 MHz
90
MHz
Turn-on time
t
on
I
C
= -1 A, Resistance loaded
0.15
0.30
s
Storage time
t
stg
I
B1
=
- 0.1 A, I
B2
= 0.1 A
0.4
0.7
s
Fall time
t
f
V
CC
= 50 V
0.10
0.15
s
Electrical Characteristics T
C
= 25C 3C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
1.4
0.2
1.6
0.2
0.8
0.1
0.55
0.15
2.54
0.30
5.08
0.50
1
2
3
2.6
0.1
2.9
0.2
4.6
0.2
3.2
0.1
3.0
0.5
9.9
0.3
15.0
0.5
13.7
0.2
4.2
0.2
Solder Dip
Rank
Q
P
h
FE1
120 to 250
160 to 320
1 : Base
2 : Collector
3 : Emitter
TO-220D-A1 Package
Internal Connection
B
C
E
Note) *: Non-repetitive peak collector current
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
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if any of the products or technologies described in this material and controlled under the "Foreign
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product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
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reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
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2002 JUL
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