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Электронный компонент: 2SA2079

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Transistors
Publication date : December 2004
SJC00326AED
1
2SA2079
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SC5848
Features
High forward current transfer ratio h
FE
Suitable for high-density mounting and douwsizing of the equipment for
ultraminiature leadless package
Package: 0.6 mm 1.0 mm (hight 0.39 mm)
Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
45
V
Collector-emitter voltage (Base open)
V
CEO
45
V
Emitter-base voltage (Collector open)
V
EBO
7
V
Collector current
I
C
100
mA
Peak collector current
I
CP
200
mA
Collector power dissipation
P
C
100
mW
Junction temperature
T
j
125
C
Storage temperature
T
stg
55 to +125
C
Electrical Characteristics T
a
= 25C3C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 10 A, I
E
= 0
45
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 2 mA, I
B
= 0
45
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= 10 A, I
C
= 0
7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 20 V, I
E
= 0
0.1
A
Collector-emitter cut-off current (Base open)
I
CEO
V
CE
= 10 V, I
B
= 0
100
A
Forward current transfer ratio
h
FE
V
CE
= 10 V, I
C
= 2 mA
180
390
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 100 mA, I
B
= 10 mA
0.2
0.5
V
Transition frequency
f
T
V
CB
= 10 V, I
E
= 1 mA, f = 200 MHz
80
MHz
Collector output capacitance
(Common base, input open circuited)
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
2.2
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Unit: mm
1: Base
2: Emitter
3: Collector
ML3-N2 Package
0.60

0.0
5
1.00
0.05
2
1
3
0.39
+
0.01
-
0.03
0.25
0.05
0.25
0.05
0.5
0

0.05
0.65
0.01
0.15

0.0
5
2
1
0.35

0.0
1
0.05
0.03
0.0
5

0.0
3
3
Marking Symbol : 3D
2SA2079
2
SJC00326AED
P
C
T
a
I
C
V
CE
I
C
I
B
I
B
V
BE
I
C
V
BE
V
CE(sat)
I
C
0
20 40
60 80 100 120 140
0
20
40
60
80
100
120
2SA2162_ P
C
-T
a
Collector power dissipation
P
C

(
mW
)
Ambient temperature T
a
(C)
Collector current
I
C

(
mA
)
Collector-emitter voltage V
CE
(V)
0
-
10
-
20
-
30
-
40
-
50
-60
0
-
2
-
4
-
6
-
8
-
10 -12
T
a
= -300 A
-
250 A
-
200 A
-
150 A
-
100 A
-
50 A
2SA2079_I
C
-V
CE
T
a
= 25C
Base current I
B
(mA)
Collector current
I
C

(
mA
)
2SA2079_I
C
-I
B
0 - 0.2 - 0.4 - 0.6 - 0.8 -1.0 -1.2
0
-
140
-
120
-
100
-
80
-
60
-
40
-
20
V
CE
= -10 V
T
a
= 25C
Base-emitter voltage V
BE
(V)
Base current
I
B

(m
A
)
2SA2079_I
B
-V
BE
0
-
0.8
-
0.2
-
0.4
-
0.6
0
-
1.0
-
2.0
-
2.5
-
3.0
-
3.5
-
0.5
-
1.5
V
CE
= -10 V
T
a
= 25C
Base-emitter voltage V
BE
(V)
Collector current
I
C

(
mA
)
2SA2079_I
C
-V
BE
0
-
0.4
-
0.2
-
1.0 -1.2
-
0.8
-
0.6
-
20
-
40
-
60
-
80
-
100
-
120
0
T
a
= 75C
25C
-
25C
V
CE
= -10 V
Collector
-emitter saturation voltage
V
CE(sat)

(
V
)
Collector current I
C
(mA)
T
a
= 75C
25C
-
25C
2SA2079_V
CE(sat)
-I
C
-
1
-
10
-
100
-
0.01
-
0.1
-
1
I
C
/ I
B
= 10 V
h
FE
I
C
C
ob
V
CB
Forward current transfer ratio
h
FE
Collector current I
C
(mA)
2SA2079_h
FE
-I
C
-
1
-
10
-
100
-
1000
0
300
250
200
150
100
50
T
a
= 75C
25C
-
25C
V
CE
= -10 V
Collector-base voltage V
CB
(V)
Collector output capacitance (Common base, input open circuited)
C
ob
(pF)
-
8
-
16
-
24
-
32
-
40
0
10
1
2SA2079_C
ob
-V
CB
f = 1 MHz
T
a
= 25C
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Consult our sales staff in advance for information on the following applications:
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tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
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Even when the products are used within the guaranteed values, take into the consideration of incidence of
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2003 SEP