Power Transistors
1
2SA0885
2SA0885
2SA0885
2SA0885
2SA0885
(2SA885)
(2SA885)
(2SA885)
(2SA885)
(2SA885)
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SC1846
I Features
Output of 3 W can be obtained by a complementary pair with
2SC1846
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
I Absolute Maximum Ratings T
C
= 25C
1: Emitter
2: Collector
3: Base
TO-126B Package
Unit: mm
I Electrical Characteristics T
C
= 25C
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
-45
V
Collector to emitter voltage
V
CEO
-35
V
Emitter to base voltage
V
EBO
-5
V
Peak collector current
I
CP
-1.5
A
Collector current
I
C
-1
A
Collector power dissipation
P
C
1.2
*1
W
5
*2
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
=
-20 V, I
E
= 0
- 0.1
A
I
CEO
V
CE
=
-20 V, I
B
= 0
-100
A
Emitter cutoff current
I
EBO
V
EB
=
-5V, I
C
= 0
-10
A
Collector to base voltage
V
CBO
I
C
=
-10 A, I
E
= 0
-45
V
Collector to emitter voltage
V
CEO
I
C
=
-2 mA, I
B
= 0
-35
V
Forward current transfer ratio
h
FE1
*
V
CE
=
-10 V, I
C
=
-500 mA
85
340
h
FE2
V
CE
=
-5 V, I
C
=
-1 A
50
Collector to emitter saturation voltage
V
CE(sat)
I
C
=
-500 mA, I
B
=
-50 mA
- 0.5
V
Transition frequency
f
T
V
CB
=
-10 V, I
E
= 50 mA, f = 200 MHz
200
MHz
Collector output capacitance
C
ob
V
CB
=
-10 V, I
E
= 0, f = 1 MHz
20
30
pF
Note) *: Rank classification
Rank
Q
R
S
h
FE1
85 to 170
120 to 240
170 to 340
Note) *1: Without heat sink
*2: With a 100 100 2 mm A1 heat sink
8.0
+0.5
0.1
1.9
0.1
3.05
0.1
3.8
0.3
11.0
0.5
16.0
1.0
3.2
0.2
0.75
0.1
0.5
0.1
2.3
0.2
4.6
0.2
0.5
0.1
1.76
0.1
1
2
3
3.16
0.1
Note.) The Part number in the Parenthesis shows conventional part number.
Power Transistors
2
2SA0885
0
6
5
4
3
2
1
0
200
40
80
160
120
180
20
60
140
100
(1)With a 100
1002mm
Al heat sink
(2)Without heat sink
(1)
(2)
Ambient temperature T
a
(C)
Collector power dissipation P
C
(W
)
0
1.5
1.25
1.0
0.75
0.5
0.25
0
10
2
4
8
6
T
C
=25C
I
B
=10mA
1mA
2mA
3mA
4mA
5mA
6mA
9mA
8mA
7mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0
1.2
1.0
0.8
0.6
0.4
0.2
0
12
2
10
4
8
6
V
CE
=10V
T
C
=25C
Base current I
B
(mA)
Collector current I
C
(mA
)
P
C
T
a
I
C
V
CE
I
C
I
B
0.01
0.03
0.01
0.03
0.1
0.3
1
3
10
0.1
0.3
1
I
C
/I
B
=10
T
C
=100C
25C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.01
0.03
0.1
0.3
1
0.03
1
3
0.1
10
0.3
I
C
/I
B
=10
T
C
=25C
25C
100C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.01
0.1
1
0.03
0.3
1
1000
100
10
3
300
30
V
CE
=10V
T
C
=100C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
V
CE(sat)
I
C
V
BE(sat)
I
C
h
FE
I
C
1
3
10
30
100
0
40
80
120
200
160
20
60
100
180
140
V
CB
=10V
f=200MHz
T
C
=25C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
50
40
30
20
10
45
35
25
15
5
I
E
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0.1
0.3
1
3
10
30
100
0
20
40
60
80
100
I
C
=10mA
T
C
=25C
Base to emitter resistance R
BE
(k
)
Collector to emitter voltage V
CER
(V
)
f
T
I
E
C
ob
V
CB
V
CER
R
BE
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2001 MAR
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