Power Transistors
1
Publication date: February 2003
SJD00006BED
2SA0963
(2SA963)
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SC2209
Features
Large collector power dissipation P
C
Output of 4 W to 5 W can be obtained by a complementary pair with
2SC2209
Absolute Maximum Ratings T
a
= 25C
Electrical Characteristics T
a
= 25C 3C
Unit: mm
1: Emitter
2: Collector
3: Base
TO-126A-A1 Package
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
=
-1 mA, I
E
= 0
-50
V
Collector-emitter voltage (Base open)
V
CEO
I
C
=
-2 mA, I
B
= 0
-40
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= -20 V, I
E
= 0
-1
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= -10 V, I
B
= 0
-100
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= -5 V, I
C
= 0
-10
A
Forward current transfer ratio
*
h
FE
V
CE
= -5 V, I
C
= -1 A
80
220
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -1.5 A, I
B
= - 0.15 A
-1.0
V
Base-emitter saturation voltage
V
BE(sat)
I
C
= -2 A, I
B
= - 0.2 A
-1.5
V
Transition frequency
f
T
V
CB
= -5 V, I
E
= 0.5 A, f = 200 MHz
150
MHz
Collector output capacitance
C
ob
V
CB
=
-5 V, I
E
= 0, f = 1 MHz
70
pF
(Common base, input open circuited)
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
-50
V
Collector-emitter voltage (Base open)
V
CEO
-40
V
Emitter-base voltage (Collector open)
V
EBO
-5
V
Collector current
I
C
-1.5
A
Peak collector current
I
CP
-3
A
Collector power dissipation
*
P
C
10
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Note) The part number in the parenthesis shows conventional part number.
Rank
Q
R
h
FE
80 to 160
120 to 220
Note) *: T
C
= 25C
7.5
+0.5
0.1
2.3
0.2
1.9
0.1
3.05
0.1
3.8
0.3
11.0
0.5
16.0
1.0
2.9
0.2
0.75
0.1
0.5
0.1
2.3
0.2
4.6
0.2
0.5
0.1
1.26
0.1
1
2
3
120
2SA0963
2
SJD00006BED
V
BE(sat)
I
C
h
FE
I
C
f
T
I
E
P
C
T
a
I
C
V
CE
V
CE(sat)
I
C
C
ob
V
CB
V
CER
R
BE
I
CEO
T
a
0
12
10
8
6
4
2
0
200
40
80
160
120
Collector power dissipation P
C
(W)
Ambient temperature T
a
(
C)
0
-10
-2
-4
-8
-6
0
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
- 1.0
- 0.5
T
C
= 25C
I
B
= -40 mA
-5 mA
-10 mA
-15 mA
-20 mA
-25 mA
-30 mA
-35 mA
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
- 0.01
- 0.01
- 0.1
-1
-10
- 0.1
-1
I
C
/ I
B
= 10
T
C
= 100C
25
C
-25C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(A)
- 0.01
- 0.01
-1
- 0.1
- 0.1
-1
-10
T
C
= -25C
25
C
100
C
I
C
/ I
B
= 10
Base-emitter saturation voltage V
BE(sat)
(V)
Collector current I
C
(A)
- 0.01
-1
- 0.1
1
10
100
1 000
V
CE
= -5 V
T
C
= 100C
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(A)
0.01
0.1
1
10
0
240
200
160
120
80
40
V
CB
= -5 V
f
= 200 MHz
T
C
= 25C
Transition frequency f
T
(MHz)
Emitter current I
E
(A)
-1
-10
-100
0
20
40
60
80
100
120
140
I
E
= 0
f
= 1 MHz
T
C
= 25C
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
0
-60
-50
-40
-30
-20
-10
0.001
0.01
0.1
1
10
T
C
= 25C
Base-emitter resistance R
BE
(k
)
Collector-emitter voltage
(Resistor between B and E)
V
CER
(V)
1
1 000
100
10
I
CEO
(T
a
)
I
CEO
(T
a
=
25
C)
0
120
20
100
40
80
60
V
CE
= -12 V
Ambient temperature T
a
(
C)
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2002 JUL
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