1
Transistor
2SB621, 2SB621A
Silicon PNP epitaxial planer type
For low-frequency output amplification
Complementary to 2SD592 and 2SD592A
s
Features
q
Low collector to emitter saturation voltage V
CE(sat)
.
q
High transition frequency f
T
.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO92
EIAJ:SC43A
5.0
0.2
4.0
0.2
5.1
0.2
13.5
0.5
0.45
+0.2
0.1
0.45
+0.2
0.1
1.27
1.27
2.3
0.2
2.54
0.15
2
1
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
30
60
25
50
5
1.5
1
750
150
55 ~ +150
Unit
V
V
V
A
A
mW
C
C
2SB621
2SB621A
2SB621
2SB621A
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10
A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CE
= 10V, I
C
= 500mA
V
CE
= 5V, I
C
= 1A
I
C
= 500mA, I
B
= 50mA
IC = 500mA, I
B
= 50mA
V
CB
= 10V, I
E
= 50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
30
60
25
50
5
85
50
typ
0.2
0.85
200
20
max
0.1
340
0.4
1.2
30
Unit
A
V
V
V
V
V
MHz
pF
2SB621
2SB621A
2SB621
2SB621A
*
h
FE1
Rank classification
Rank
Q
R
S
h
FE1
85 ~ 170
120 ~ 240
170 ~ 340
2
Transistor
2SB621, 2SB621A
0
160
40
120
80
140
20
100
60
0
1.0
0.8
0.6
0.4
0.2
0.9
0.7
0.5
0.3
0.1
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
10
8
2
6
4
0
1.5
1.25
1.0
0.75
0.5
0.25
Ta=25C
I
B
=10mA
1mA
2mA
3mA
4mA
5mA
6mA
7mA
8mA
9mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0
12
10
8
2
6
4
0
1.2
1.0
0.8
0.6
0.4
0.2
V
CE
=10V
T
C
=25C
Base current I
B
(mA)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
25C
Ta=75C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=25C
75C
25C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0
500
400
300
200
100
450
350
250
150
50
V
CE
=10V
Ta=75C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
1
3
10
30
100
0
200
160
120
80
40
180
140
100
60
20
V
CB
=10V
Ta=25C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
50
40
30
20
10
45
35
25
15
5
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0.1
1
10
100
0.3
3
30
0
120
100
80
60
40
20
I
C
=10mA
Ta=25C
2SB621A
2SB621
Base to emitter resistance R
BE
(k
)
Collector to emitter voltage V
CER
(V
)
P
C
-- Ta
I
C
-- V
CE
I
C
-- I
B
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
V
CER
-- R
BE
3
Transistor
2SB621, 2SB621A
0
160
40
120
80
140
20
100
60
1
10
10
2
10
3
10
4
V
CE
=10V
Ambient temperature Ta (C)
I
CEO
(Ta
)
I
CEO
(Ta=25C
)
0.01
0.1
1
10
0.03
0.3
3
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
Single pulse
Ta=25C
t=10ms
2SB621A
2SB621
t=1s
I
CP
I
C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
I
CEO
-- Ta
Area of safe operation (ASO)
PDF 
ZIP