184
Transistor
2SB0726
(2SB726)
Silicon PNP epitaxial planer type
For general amplification
s
Features
q
High foward current transfer ratio h
FE
.
q
High collector to emitter voltage V
CEO
.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
EIAJ:SC43A
TO-92-A1 Package
5.0
0.2
0.7
0.1
0.45
+0.15
0.1
2.5
+0.6
0.2
0.45
+0.15
0.1
2.5
1
2 3
+0.6
0.2
4.0
0.2
5.1
0.2
12.9
0.5
2.3
0.2
0.7
0.2
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
80
80
5
100
250
150
55 ~ +150
Unit
V
V
V
mA
mW
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
V
BE
f
T
Conditions
V
CB
= 10V, I
E
= 0
V
CE
= 10V, I
B
= 0
I
C
= 10
A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CB
= 5V, I
E
= 2mA
I
C
= 20mA, I
B
= 2mA
V
CE
= 1V, I
C
= 100mA
V
CB
= 5V, I
E
= 2mA, f = 200MHz
min
80
80
5
180
typ
1
150
max
100
1
700
0.6
1.2
Unit
nA
A
V
V
V
V
V
MHz
*
h
FE
Rank classification
Rank
R
S
T
h
FE
180 ~ 360
260 ~ 520
360 ~ 700
Note.) The Part number in the Parenthesis shows conventional part number.
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2001 MAR
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