Power Transistors
102
2SB0950, 2SB0950A
(2SB950, 2SB950A)
Silicon PNP epitaxial planar type Darlington
For power amplification and switching
Complementary to 2SD1276 and 2SD1276A
I
Features
High forward current transfer ratio h
FE
High-speed switching
Full-pack package which can be installed to the heat sink with one
screw
I
Absolute Maximum Ratings
T
C
= 25C
Unit: mm
I
Electrical Characteristics
T
C
= 25C
Parameter
Symbol
Rating
Unit
Collector to base
2SB0950
V
CBO
-60
V
voltage
2SB0950A
-80
Collector to
2SB0950
V
CEO
-60
V
emitter voltage
2SB0950A
-80
Emitter to base voltage
V
EBO
-5
V
Peak collector current
I
CP
-8
A
Collector current
I
C
-4
A
Collector power
T
C
= 25
C
P
C
40
W
dissipation
T
a
= 25
C
2
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff
2SB0950
I
CBO
V
CB
=
-60 V, I
E
= 0
-200
A
current
2SB0950A
V
CB
=
-80 V, I
E
= 0
-200
Collector cutoff
2SB0950
I
CEO
V
CE
=
-30 V, I
B
= 0
-500
A
current
2SB0950A
V
CE
=
-40 V, I
B
= 0
-500
Emitter cutoff current
I
EBO
V
EB
=
-5 V, I
C
= 0
-2
mA
Collector to emitter
2SB0950
V
CEO
I
C
=
-30 mA, I
B
= 0
-60
V
voltage
2SB0950A
-80
Forward current transfer ratio
h
FE1
V
CE
=
-3 V, I
C
=
- 0.5 A
1 000
h
FE2
*
V
CE
=
-3 V, I
C
=
-3 A
2 000
10 000
Base to emitter voltage
V
BE
V
CE
=
-3 V, I
C
=
-3 A
-2.5
V
Collector to emitter saturation voltage
V
CE(sat)1
I
C
=
-3 A, I
B
=
-12 mA
-2
V
V
CE(sat)2
I
C
=
-5 A, I
B
=
-20 mA
-4
V
Transition frequency
f
T
V
CE
=
-10 V, I
C
=
- 0.5 A, f = 1 MHz
20
MHz
Turn-on time
t
on
I
C
=
-3 A, I
B1
=
-12 mA, I
B2
= 12 mA,
0.3
s
Storage time
t
stg
V
CC
=
-50 V
2
s
Fall time
t
f
0.5
s
Rank
Q
P
h
FE2
2 000 to 5 000 4 000 to 10 000
10.0
0.2
5.5
0.2
7.5
0.2
16.7
0.3
0.7
0.1
14.0
0.5
Solder Dip
(4.0)
0.5
+0.2
0.1
1.4
0.1
1.3
0.2
0.8
0.1
2.54
0.3
5.08
0.5
2
1
3
2.7
0.2
4.2
0.2
4.2
0.2
3.1
0.1
Internal Connection
B
C
E
1 : Base
2 : Collector
3 : Emitter
EIAJ : SC-67
TO-220F-A1 Package
Note) *: Rank classification
Note.) The Part numbers in the Parenthesis show conventional part number.
Power Transistors
103
2SB0950, 2SB0950A
V
CE(sat)
I
C
h
FE
I
C
C
ob
V
CB
P
C
T
a
I
C
V
CE
I
C
V
BE
Area of safe operation (ASO)
R
th(t)
t
0
160
40
120
80
140
20
100
60
0
50
40
30
20
10
(1) T
C
=Ta
(2) With a 100
100
2mm
Al heat sink
(3) With a 50
50
2mm
Al heat sink
(4) Without heat sink
(P
C
=2W)
(1)
(4)
(3)
(2)
Ambient temperature T
a
(C)
Collector power dissipation P
C
(W
)
0
5
4
1
3
2
0
6
5
4
3
2
1
T
C
=25C
2.5mA
2.0mA
1.5mA
1.0mA
0.5mA
0.4mA
0.3mA
0.2mA
I
B
=3.0mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0
3.2
0.8
2.4
1.6
0
10
8
6
4
2
V
CE
=3V
25C
T
C
=100C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=250
25C
T
C
=100C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
10
2
10
3
10
4
10
5
10
6
V
CE
=3V
T
C
=100C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
1
3
10
30
100
300
1000
3000
10000
I
E
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
t=1ms
10ms
I
CP
I
C
2SB0950A
2SB0950
Non repetitive pulse
T
C
=25C
DC
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
10
4
10
10
3
10
1
10
2
1
10
3
10
2
10
4
10
2
10
1
1
10
10
3
10
2
(1)
(2)
(1) Without heat sink
(2) With a 100
100
2mm Al heat sink
Time t (s)
Thermal resistance R
th
(t)
(
C/W
)
Please read the following notes before using the datasheets
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2001 MAR
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