Power Transistors
1
Publication date: February 2003
SJD00035AED
2SB0968
(2SB968)
Silicon PNP epitaxial planar type
For low-frequency output amplification
Complementary to 2SD1295
Features
Possible to solder radiation fin directly to printed circuit board
High collector-emitter voltage (Base open) V
CEO
Large collector power dissipation P
C
Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
-50
V
Collector-emitter voltage (Base open)
V
CEO
-40
V
Emitter-base voltage (Collector open)
V
EBO
-5
V
Collector current
I
C
-1.5
A
Peak collector current
I
CP
-3
A
Collector power dissipation (T
C
= 25C)
P
C
10
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= -1 mA, I
E
= 0
-50
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= -2 mA, I
B
= 0
-40
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= -20 V, I
E
= 0
-1
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= -10 V, I
B
= 0
-100
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= -5 V, I
C
= 0
-10
A
Forward current transfer ratio
h
FE1
*
V
CE
= -5 V, I
C
= -1 A
80
220
h
FE2
V
CE
= -5 V, I
C
= -1 mA
10
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -1.5 A, I
B
= - 0.15 A
-1
V
Base-emitter saturation voltage
V
BE(sat)
I
C
= -2 A, I
B
= - 0.2 A
-1.5
V
Transition frequency
f
T
V
CE
= -5 V, I
C
= - 0.5 A, f = 200 MHz
150
MHz
Collector output capacitance
C
ob
V
CB
= -20 V, I
E
= 0, f = 1 MHz
45
pF
(Common base, input open circuited)
Electrical Characteristics T
a
= 25C 3C
6.5
0.1
2.3
0.1
(5.3)
(4.35)
(3.0)
(1.8)
(5.5)
0.75
0.1
2.3
0.1
4.6
0.1
1
1
2
3
3
2
0.5
0.1
1.0
0.1
0.1
0.05
0.5
0.1
0.8 max.
1.0
0.2
7.3
0.1
1.8
0.1
2.5
0.1
5.3
0.1
4.35
0.1
Unit: mm
1: Base
2: Collector
3: Emitter
EIAJ: SC-63
U-G1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
h
FE1
80 to 160
120 to 220
Note) Self-supported type package is also prepared.
Note) The part number in the parenthesis shows conventional part number.
2SB0968
2
SJD00035AED
V
BE(sat)
I
C
h
FE
I
C
f
T
I
E
P
C
T
a
I
C
V
CE
V
CE(sat)
I
C
C
ob
V
CB
V
CER
R
BE
I
CEO
T
a
0
0
160
40
120
80
4
12
8
16
T
C
=Ta
Collector power dissipation P
C
(W)
Ambient temperature T
a
(
C)
0
-10
-2
-4
-8
-6
0
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
- 0.5
T
C
=25C
I
B
=40mA
5mA
10mA
15mA
20mA
25mA
30mA
35mA
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
- 0.01
- 0.01
- 0.1
-1
-10
- 0.1
-1
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(A)
I
C
/I
B
=10
T
C
=100C
25C
25C
- 0.01
- 0.01
-1
- 0.1
- 0.1
-1
-10
I
C
/I
B
=10
T
C
=25C
25C
100C
Base-emitter saturation voltage V
BE(sat)
(V)
Collector current I
C
(A)
- 0.01
-1
- 0.1
1
10
100
1 000
V
CE
=5V
T
C
=100C
25C
25C
Forward current transfer ratio h
FE
Collector current I
C
(A)
10
0
240
200
160
120
80
40
Transition frequency f
T
(MHz)
Emitter current I
E
(mA)
10
2
10
3
10
4
V
CB
=5V
f=200MHz
T
C
=25C
-1
-10
-100
0
20
40
60
80
100
120
140
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
I
E
=0
f=1MHz
T
C
=25C
0
-120
-100
-80
-60
-40
-20
0.001
0.01
0.1
1
10
T
C
=25C
Base-emitter resistance R
BE
(k
)
Collector-emitter voltage
(Resistor between B and E)
V
CER
(V)
1
1 000
100
10
0
120
20
100
40
80
60
V
CE
=12V
Ambient temperature T
a
(
C)
I
CEO
(T
a
)
I
CEO
(T
a
=
25
C)
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
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2002 JUL
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