Transistors
1
Publication date: March 2003
SJC00066BED
2SB1036
Silicon PNP epitaxial planar type
For low-frequency and low-noise amplification
Features
Optimum for high-density mounting
Allowing supply with the radial taping
Low noise voltage NV
Absolute Maximum Ratings T
a
= 25C
Electrical Characteristics T
a
= 25C 3C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
-120
V
Collector-emitter voltage (Base open)
V
CEO
-120
V
Emitter-base voltage (Collector open)
V
EBO
-5
V
Collector current
I
C
-20
mA
Peak collector current
I
CP
-50
mA
Collector power dissipation
P
C
300
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= -10 A, I
E
= 0
-120
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= -1 mA, I
B
= 0
-120
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= -10 A, I
C
= 0
-5
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= -50 V, I
E
= 0
-100
nA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= -50 V, I
B
= 0
-1
A
Forward current transfer ratio
*
h
FE
V
CE
= -5 V, I
C
= -2 mA
180
520
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -20 mA, I
B
= -2 mA
- 0.6
V
Transition frequency
f
T
V
CB
= -5 V, I
E
= 2 mA, f = 200 MHz
200
MHz
Noise voltage
NV
V
CE
= -40 V, I
C
= -1 mA, G
V
= 80 dB
150
mV
R
g
= 100 k, Function = FLAT
Rank
R
S
h
FE
180 to 360
260 to 520
4.0
0.2
0.75 max.
2.0
0.2
0.45
(2.5) (2.5)
0.7
0.1
2
3
1
+0.20
0.10
0.45
+0.20
0.10
7.6
3.0
0.2
(0.8)
(0.8)
15.6
0.5
Unit: mm
1: Emitter
2: Collector
3: Base
NS-B1 Package
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2002 JUL
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