Power Transistors
1
Publication date: March 2003
SJD00051AED
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
= -10 mA, I
B
= 0
-80
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= -100 V, I
E
= 0
-10
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= -5 V, I
C
= 0
-50
A
Forward current transfer ratio
h
FE1
V
CE
= -2 V, I
C
= - 0.1 A
45
h
FE2
*
V
CE
= -2 V, I
C
= -1 A
90
260
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -3 A, I
B
= - 0.15 A
- 0.5
V
Base-emitter saturation voltage
V
BE(sat)
I
C
= -3 A, I
B
= - 0.15 A
-1.5
V
Transition frequency
f
T
V
CE
= -10 V, I
C
= - 0.5 A, f = 10 MHz
30
MHz
Turn-on time
t
on
I
C
= -1 A, I
B1
= - 0.1 A, I
B2
= 0.1 A
0.15
s
Storage time
t
stg
V
CC
= -50 V
0.8
s
Fall time
t
f
0.15
s
2SB1175
Silicon PNP epitaxial planar type
For voltage switching
Complementary to 2SD1745
Features
Low collector-emitter saturation voltage V
CE(sat)
Satisfactory linearity of forward current transfer ratio h
FE
Large collector current I
C
I type package enabling direct soldering of the radiating fin to the
printed circuit board, etc. of small electronic equipment
Absolute Maximum Ratings T
C
= 25C
Electrical Characteristics T
C
= 25C 3C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
-130
V
Collector-emitter voltage (Base open)
V
CEO
-80
V
Emitter-base voltage (Collector open)
V
EBO
-7
V
Collector current
I
C
-4
A
Peak collector current
I
CP
-8
A
Collector power dissipation
P
C
15
W
T
a
= 25C
1.3
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Rank
Q
P
h
FE2
90 to 180
130 to 260
7.0
0.3
3.5
0.2
0 to 0.15
12.6
0.3
7.2
0.3
2.5
0.2
2.5
0.2
(1.0)
(1.0)
1.0
0.2
3.0
0.2
2.0
0.2
1.1
0.1
0.75
0.1
0.9
0.1
0 to 0.15
0.4
0.1
2.3
0.2
4.6
0.4
1
2
3
Unit: mm
1: Base
2: Collector
3: Emitter
I-G1 Package
Note) Self-supported type package is also prepared.
2SB1175
2
SJD00051AED
V
BE(sat)
I
C
h
FE
I
C
f
T
I
C
P
C
T
a
I
C
V
CE
V
CE(sat)
I
C
C
ob
V
CB
t
on
,
t
stg
,
t
f
I
C
Safe operation area
0
0
160
40
120
80
5
15
10
20
(1)T
C
=Ta
(2)Without heat sink
(P
C
=1.3W)
(1)
(2)
Collector power dissipation P
C
(W
)
Ambient temperature T
a
(
C)
0
-6
-5
-4
-3
-2
-1
0
-10
-2
-4
-8
-6
Collector current I
C
(A
)
Collector-emitter voltage V
CE
(V)
T
C
=25C
80mA
90mA
60mA
70mA
40mA
50mA
30mA
20mA
8mA
5mA
I
B
=100mA
- 0.01
- 0.01
- 0.1
-1
-10
-100
- 0.1
-1
-10
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(A)
I
C
/I
B
=20
25C
T
C
=100C
25C
- 0.01
- 0.01
- 0.1
-1
-10
-100
- 0.1
-1
-10
I
C
/I
B
=20
T
C
=25C
25C
100C
Base-emitter saturation voltage V
BE(sat)
(V
)
Collector current I
C
(A)
- 0.01
- 0.1
-1
-10
1
10
10
2
10
4
10
3
Forward current transfer ratio h
FE
Collector current I
C
(A)
V
CE
=2V
T
C
=100C
25C
25C
- 0.01
- 0.1
-1
-10
1
10
10
2
10
4
10
3
Transition frequency f
T
(MHz
)
Collector current I
C
(A)
V
CE
=10V
f=10MHz
T
C
=25C
- 0.1
-1
-10
-100
1
10
10
2
10
4
10
3
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
I
E
=0
f=1MHz
T
C
=25C
0
-3.2
- 0.8
-2.4
-1.6
0.01
0.1
1
10
100
t
stg
t
on
t
f
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=10
(I
B1
=I
B2
)
V
CC
=50V
T
C
=25C
Turn-on time t
on
, Storage time t
stg
, Fall time t
f
(
s)
Collector current I
C
(A)
- 0.01
-1
- 0.1
-1
-10
-100
-10
-100
-1 000
Non repetitive pulse
T
C
=25C
t=10ms
t=300ms
t=1ms
I
CP
I
C
Collector current I
C
(A
)
Collector-emitter voltage V
CE
(V)
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2002 JUL
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