1
Transistor
2SB1221
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SC3941
s
Features
q
Low collector to emitter saturation voltage V
CE(sat)
.
q
Allowing supply with the radial taping.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
TO92NL Package
5.0
0.2
13.5
0.5
0.7
0.2
8.0
0.2
1.27
1 2 3
1.27
4.0
0.2
0.45
+0.15
0.1
0.45
+0.15
0.1
2.3
0.2
0.7
0.1
2.54
0.15
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
250
200
5
100
70
1
150
55 ~ +150
Unit
V
V
V
mA
mA
W
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 12V, I
E
= 0
I
C
= 100
A, I
B
= 0
I
E
= 1
A, I
C
= 0
V
CE
= 10V, I
C
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CB
= 10V, I
E
= 10mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
200
5
60
50
typ
80
5
max
2
220
1.5
10
Unit
A
V
V
V
MHz
pF
*
h
FE
Rank classification
Rank
Q
R
h
FE
60 ~ 150
100 ~ 220
2
Transistor
2SB1221
0
160
40
120
80
140
20
100
60
0
1.2
1.0
0.8
0.6
0.4
0.2
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
10
8
2
6
4
0
120
100
80
60
40
20
Ta=25C
I
B
=2mA
0.2mA
0.4mA
0.6mA
0.8mA
1.0mA
1.2mA
1.4mA
1.6mA
1.8mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0
2.4
2.0
1.6
0.4
1.2
0.8
0
120
100
80
60
40
20
V
CE
=10V
Ta=25C
Base current I
B
(mA)
Collector current I
C
(mA
)
0
1.2
1.0
0.8
0.2
0.6
0.4
0
2.4
2.0
1.6
1.2
0.8
0.4
V
CE
=10V
Ta=25C
Base to emitter voltage V
BE
(V)
Base current I
B
(mA
)
0
2.0
1.6
0.4
1.2
0.8
0
120
100
80
60
40
20
V
CE
=10V
Ta=75C
25C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA
)
0.1
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=75C
25C
25C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
1
10
100
0.3
3
30
0
300
250
200
150
100
50
V
CE
=10V
Ta=75C
25C
25C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
0
160
120
40
100
140
80
20
60
V
CB
=10V
Ta=25C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
16
12
4
10
14
8
2
6
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
P
C
-- Ta
I
C
-- V
CE
I
C
-- I
B
I
B
-- V
BE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
3
Transistor
2SB1221
0
200
160
40
120
80
1
3
10
30
100
300
1000
3000
10000
V
EB
=5V
Ambient temperature Ta (C)
I
EBO
(Ta
)
I
EBO
(Ta=25C
)
0
200
160
40
120
80
1
3
10
30
100
300
1000
3000
10000
V
CB
=250V
Ambient temperature Ta (C)
I
CBO
(Ta
)
I
CBO
(Ta=25C
)
1
10
100
1000
3
30
300
0.1
0.3
1
3
10
30
100
300
1000
Single pulse
Ta=25C
t=10ms
t=1s
I
CP
I
C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
I
EBO
-- Ta
I
CBO
-- Ta
Area of safe operation (ASO)
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