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Электронный компонент: 2SB1288

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1
Transistor
2SB1288
Silicon PNP epitaxial planer type
For low-frequency power amplification
For DC-DC converter
For stroboscope
s
Features
q
Low collector to emitter saturation voltage V
CE(sat)
.
q
Large collector current I
C
.
q
Allowing supply with the radial taping.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
TO92NL Package
5.0
0.2
13.5
0.5
0.7
0.2
8.0
0.2
1.27
1 2 3
1.27
4.0
0.2
0.45
+0.15
0.1
0.45
+0.15
0.1
2.3
0.2
0.7
0.1
2.54
0.15
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
30
20
7
10
5
1
150
55 ~ +150
Unit
V
V
V
A
A
W
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
V
CEO
V
EBO
h
FE
*1
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 10V, I
E
= 0
V
EB
= 5V, I
C
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CE
= 2V, I
C
= 2A
*2
I
C
= 3A, I
B
= 0.1A
*2
V
CB
= 6V, I
E
= 50mA, f = 200MHz
V
CB
= 20V, I
E
= 0, f = 1MHz
min
20
7
90
typ
120
max
100
100
625
1
85
Unit
nA
nA
V
V
V
MHz
pF
*1
h
FE
Rank classification
Rank
P
Q
R
h
FE
90 ~ 135
120 ~ 205
180 ~ 625
*2
Pulse measurement
2
Transistor
2SB1288
0
160
40
120
80
140
20
100
60
0
1.2
1.0
0.8
0.6
0.4
0.2
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
12
10
8
2
6
4
0
6
5
4
3
2
1
Ta=25C
35mA
30mA
25mA
20mA
15mA
10mA
5mA
1mA
I
B
=40mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0
2.0
1.6
0.4
1.2
0.8
0
12
10
8
6
4
2
V
CE
=2V
Ta=75C
25C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(A
)
0.01
0.3
1
10
0.03
0.1
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=30
Ta=75C
25C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0
600
500
400
300
200
100
V
CE
=2V
Ta=75C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
1
3
10
30
100
0
240
200
160
120
80
40
V
CB
=6V
Ta=25C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
200
160
120
80
40
180
140
100
60
20
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0.1
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
Single pulse
Ta=25C
t=10ms
t=1s
I
CP
I
C
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
P
C
-- Ta
I
C
-- V
CE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
Area of safe operation (ASO)