Transistors
1
2SB1320A
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD1991A
I Features
High forward current transfer ratio h
FE
Allowing supply with the radial taping
I Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
-60
V
Collector to emitter voltage
V
CEO
-50
V
Emitter to base voltage
V
EBO
-7
V
Peak collector current
I
CP
-200
mA
Collector current
I
C
-100
mA
Collector power dissipation
P
C
400
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
= -20 V, I
E
= 0
-1
A
I
CEO
V
CE
= -20 V, I
B
= 0
-1
A
Collector to base voltage
V
CBO
I
C
= -10 A, I
E
= 0
-60
V
Collector to emitter voltage
V
CEO
I
C
= -2 mA, I
B
= 0
-50
V
Emitter to base voltage
V
EBO
I
E
= -10 A, I
C
= 0
-7
V
Forward current transfer ratio
*
h
FE
V
CE
= -10 V, I
C
= -2 mA
160
460
Collector to emitter saturation voltage
V
CE(sat)
I
C
= -100 mA, I
B
= -10 mA
-1
V
Transition frequency
f
T
V
CB
= -10 V, I
E
= 1 mA, f = 200 MHz
80
MHz
Collector output capacitance
C
ob
V
CB
= -10 V, I
E
= 0, f = 1 MHz
3.5
pF
I Electrical Characteristics T
a
= 25C 3C
Note) *: Rank classification
Unit: mm
6.9
0.1
1.05
0.05
2.5
0.1
3.5
0.1
14.5
0.5
(1.45)
0.8
0.7
4.0
0.15
0.85
0.8
1.0
0.65 max.
0.45
+0.1
-0.05
0.45
+
0.1
-
0.05
2.5
0.5 2.50.5
2.5
0.1
1
2
3
1.2
0.1
0.65
max.
0.45
0.1
0.05
+
-
(HW Type)
Note) In addition to the
lead type shown in
the upper figure,
the type as shown
in the lower figure
is also available.
1: Emitter
2: Collector
3: Base
MT1 Type Package
Rank
Q
R
S
No-rank
h
FE
160 to 260
210 to 340
290 to 460
160 to 460
Product of no-rank is not classified and have no indication for rank.
2SB1320A
Transistors
2
P
C
T
a
I
C
V
CE
I
C
I
B
I
B
V
BE
I
C
V
BE
V
CE(sat)
I
C
h
FE
I
C
f
T
I
E
C
ob
V
CB
0
160
40
120
80
140
20
100
60
0
100
200
300
400
500
Ambient temperature T
a
(
C)
Collector power dissipation P
C
(mW
)
0
0
-12
-2
-10
-4
-8
-6
-120
-100
-80
-60
-40
-20
-250 A
-200 A
-150 A
-100 A
-50 A
I
B
= -300 A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
T
a
= 25C
0
0
-100
-200
-300
-400
-60
-50
-40
-30
-20
-10
Base current I
B
(
A)
Collector current I
C
(mA
)
V
CE
= -5 V
T
a
= 25C
Base current
I
B
(
A
)
0
-400
-350
-300
-250
-200
-150
-100
-50
0
- 0.4
- 0.8
-1.2
-1.6
Base to emitter voltage V
BE
(V)
V
CE
= -5 V
T
a
= 25C
0
0
-2.0
-1.6
-1.2
-240
-200
-160
-120
-80
-40
T
a
= 75C
-25C
25
C
Collector current
I
C
(m
A
)
- 0.4
- 0.8
Base to emitter voltage V
BE
(V)
V
CE
= -5 V
- 0.001
- 0.003
-1
-3
-1
-3
-10
-10 -30 -100 -300 -1 000
25
C
-25C
T
a
= 75C
- 0.01
- 0.03
- 0.1
- 0.3
Collector to emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
I
C
/ I
B
= 10
0
-1
-3
600
500
400
300
200
100
-10 -30 -100 -300 -1 000
T
a
= 75C
25
C
-25C
Forward current transfer ratio h
FE
V
CE
= -5 V
Collector current I
C
(mA)
0.1
0.3
1
3
10
30
100
0
160
140
120
100
80
60
40
20
Transition frequency f
T
(MHz
)
Emitter current I
E
(mA)
V
CB
= -10 V
T
a
= 25C
-1
-3
-10
-2
-20
-5
-50
-30
-100
0
2
6
4
8
1
5
3
7
Collector output capacitance C
ob
(
pF
)
Collector to base voltage V
CB
(V)
I
E
= 0
f
= 1 MHz
T
a
= 25C
Transistors
2SB1320A
3
C
re
V
CE
NF
I
E
NF
I
E
h Parameter
I
E
h Parameter
V
CB
I
CBO
T
a
Common emitter reverse transfer capacitance C
re
(pF
)
Collector to emitter voltage V
CE
(V)
0
6
5
4
3
2
1
0
-30
-5
-25
-10
-20
-15
I
E
= 1 mA
f
= 10.7 MHz
T
a
= 25C
Noise figure NF
(dB
)
Emitter current I
E
(mA)
0
6
5
4
3
2
1
- 0.01 - 0.03 - 0.1 - 0.3
-1
-3
-10
V
CB
= -5 V
f
= 1 kHz
R
g
= 2 k
T
a
= 25C
- 0.1
- 0.3
-1
-3
10
-2
- 0.5
- 0.2
-5
Noise figure NF
(dB
)
Emitter current I
E
(mA)
0
4
8
12
20
18
14
10
6
2
16
V
CB
= -5 V
R
g
= 50 k
T
a
= 25C
f
= 100 Hz
10 kHz
1 kHz
1
2
3
5
10
20
30
50
100
200
300
-1
-3
-10
-2
-5
h Parameter
- 0.1
- 0.3- 0.5
- 0.2
h
fe
h
oe
(
S)
h
ie
(k
)
h
re
(
10
-4
)
Emitter current I
E
(mA)
V
CB
= -5 V
f
= 270 Hz
T
a
= 25C
1
-1
2
3
5
10
20
30
50
100
200
300
-3
-10
-30
-100
-20
-5
-2
-50
h
fe
h
oe
(
S)
h
ie
(k
)
h
re
(
10
-4
)
h Parameter
Collector to vase voltage V
CB
(V)
I
E
= -2 mA
f
= 270 Hz
T
a
= 25C
1
2
3
5
10
20
30
50
100
I
CBO
(T
a
)
I
CBO
(T
a
=
25
C
)
Ambient temperature T
a
(
C)
0
150
75
25
125
50
100
V
CB
= -10 V
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