1
Power Transistors
2SB1417, 2SB1417A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD2137 and 2SD2137A
s
Features
q
High forward current transfer ratio h
FE
which has satisfactory linearity
q
Low collector to emitter saturation voltage V
CE(sat)
q
Allowing automatic insertion with radial taping
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
80
60
80
6
5
3
15
2.0
150
55 to +150
Unit
V
V
V
A
A
W
C
C
2SB1417
2SB1417A
2SB1417
2SB1417A
T
C
=25
C
Ta=25
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CES
I
CEO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CE
= 60V, V
BE
= 0
V
CE
= 80V, V
BE
= 0
V
CE
= 30V, I
B
= 0
V
CE
= 60V, I
B
= 0
V
EB
= 6V, I
C
= 0
I
C
= 30mA, I
B
= 0
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 3A
V
CE
= 4V, I
C
= 3A
I
C
= 3A, I
B
= 0.375A
V
CE
= 5V, I
C
= 0.2A, f = 10MHz
I
C
= 1A, I
B1
= 0.1A, I
B2
= 0.1A,
V
CC
= 50V
min
60
80
70
10
typ
30
0.3
1.0
0.2
max
100
100
100
100
100
250
1.8
1.2
Unit
A
A
A
V
V
V
MHz
s
s
s
2SB1417
2SB1417A
2SB1417
2SB1417A
2SB1417
2SB1417A
Note: Ordering can be made by the common rank (PQ rank h
FE1
= 70 to 250) in the rank classification.
*
h
FE1
Rank classification
Rank
Q
P
h
FE1
70 to 150
120 to 250
Unit: mm
1:Base
2:Collector
3:Emitter
MT4 Type Package
1.0
10.0
0.2
0.55
0.1
2.5
0.2
2.5
0.2
4.2
0.2
13.0
0.2
2.5
0.2
18.0
0.5
Solder Dip
5.0
0.1
2.25
0.2
1.2
0.1
0.65
0.1
0.55
0.1
C1.0
90
C1.0
1 2 3
1.05
0.1
0.35
0.1
2
Power Transistors
2SB1417, 2SB1417A
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
I
C
-- V
BE
h
FE
-- I
C
f
T
-- I
C
C
ob
-- V
CB
t
on
, t
stg
, t
f
-- I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
20
15
5
10
(1) T
C
=Ta
(2) Without heat sink
(P
C
=2.0W)
(1)
(2)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
12
10
8
2
6
4
0
6
5
4
3
2
1
T
C
=25C
10mA
20mA
30mA
40mA
50mA
60mA
70mA
80mA
90mA
I
B
=100mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.1
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=8
25C
100C
T
C
=25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0
2.0
1.6
0.4
1.2
0.8
0
6
5
4
3
2
1
V
CE
=4V
T
C
=100C
25C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
10
30
100
300
1000
3000
10000
30000
100000
V
CE
=4V
T
C
=100C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.01
0.1
1
10
0.03
0.3
3
1
3
10
30
100
300
1000
3000
10000
V
CE
=5V
f=10MHz
T
C
=25C
Collector current I
C
(A)
Transition frequency f
T
(MHz
)
1
3
10
30
100
1
1000
100
10
3
30
300
I
E
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0
4
1
3
2
0.01
0.03
0.1
0.3
1
3
10
30
100
t
stg
t
on
t
f
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=5
(I
B1
=I
B2
)
V
CC
=200V
T
C
=25C
Collector current I
C
(A)
Switching time t
on
,t
stg
,t
f
(
s
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
t=1ms
I
CP
I
C
10ms
2SB1417A
2SB1417
Non repetitive pulse
T
C
=25C
DC
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
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