1
Transistor
2SB1462
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD2216
s
Features
q
High foward current transfer ratio h
FE
.
q
SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
EIAJ:SC75
3:Collector
SS-Mini Type Package
1.6
0.15
1.6
0.1
1.0
0.1
0.75
0.15
0.45
0.1
0.5
0.3
0 to 0.1
0.5
0.8
0.1
0.4
0.4
0.2
+0.1 0.05
0.15
+0.1 0.05
1
2
3
0.2
0.1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
60
50
7
200
100
125
125
55 ~ +125
Unit
V
V
V
mA
mA
mW
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 10V, I
B
= 0
I
C
= 10
A, I
E
= 0
I
C
= 100
A, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CB
= 10V, I
E
= 1mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
60
50
7
160
typ
0.11
80
2.7
max
0.1
100
460
0.3
Unit
A
A
V
V
V
V
MHz
pF
*
h
FE
Rank classification
Rank
Q
R
S
h
FE
160 ~ 260
210 ~ 340
290 ~ 460
Marking Symbol
AQ
AR
AS
Marking symbol :
A
2
Transistor
2SB1462
0
160
40
120
80
140
20
100
60
0
150
125
100
75
50
25
Ambient temperature Ta (C)
Collector power dissipation P
C
(mW
)
0
18
6
12
0
60
50
40
30
20
10
Ta=25C
I
B
=300
A
250
A
200
A
150
A
100
A
50
A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0
450
150
300
0
60
50
40
30
20
10
V
CE
=5V
Ta=25C
Base current I
B
(
A)
Collector current I
C
(mA
)
0
1.8
0.6
1.2
0
400
300
100
250
350
200
50
150
V
CE
=5V
Ta=25C
Base to emitter voltage V
BE
(V)
Base current I
B
(
A
)
0
2.0
1.6
0.4
1.2
0.8
0
240
200
160
120
80
40
V
CE
=5V
Ta=75C
25C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA
)
1
10
100
1000
3
30
300
0.001
0.003
0.01
0.03
0.1
0.3
1
3
10
I
C
/I
B
=10
25C
25C
Ta=75C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
1
10
100
1000
3
30
300
0
600
500
400
300
200
100
V
CE
=10V
Ta=75C
25C
25C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
0
160
120
40
100
140
80
20
60
V
CB
=10V
Ta=25C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
8
6
2
5
7
4
1
3
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
P
C
-- Ta
I
C
-- V
CE
I
C
-- I
B
I
B
-- V
BE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
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