1
Composite Transistors
XP1114
Silicon PNP epitaxial planer transistor
For switching/digital circuits
s
Features
q
Two elements incorporated into one package.
(Emitter-coupled transistors with built-in resistor)
q
Reduction of the mounting area and assembly cost by one half.
s
Basic Part Number of Element
q
UN1114
2 elements
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Marking Symbol:
7Q
Internal Connection
Parameter
Symbol
Ratings
Unit
Collector to base voltage
V
CBO
50
V
Collector to emitter voltage
V
CEO
50
V
Collector current
I
C
100
mA
Total power dissipation
P
T
150
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
55 to +150
C
Rating
of
element
Overall
s
Electrical Characteristics
(Ta=25C)
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector to base voltage
V
CBO
I
C
= 10
A, I
E
= 0
50
V
Collector to emitter voltage
V
CEO
I
C
= 2mA, I
B
= 0
50
V
Collector cutoff current
I
CBO
V
CB
= 50V, I
E
= 0
0.1
A
I
CEO
V
CE
= 50V, I
B
= 0
0.5
A
Emitter cutoff current
I
EBO
V
EB
= 6V, I
C
= 0
0.2
mA
Forward current transfer ratio
h
FE
V
CE
= 10V, I
C
= 5mA
80
Forward current transfer h
FE
ratio
h
FE
(small/large)
*1
V
CE
= 10V, I
C
= 5mA
0.5
0.99
Collector to emitter saturation voltage
V
CE(sat)
I
C
= 10mA, I
B
= 0.3mA
0.25
V
Output voltage high level
V
OH
V
CC
= 5V, V
B
= 0.5V, R
L
= 1k
4.9
V
Output voltage low level
V
OL
V
CC
= 5V, V
B
= 2.5V, R
L
= 1k
0.2
V
Transition frequency
f
T
V
CB
= 10V, I
E
= 1mA, f = 200MHz
80
MHz
Input resistance
R
1
30%
10
+30%
k
Resistance ratio
R
1
/R
2
0.17
0.21
0.25
*1
Ratio between 2 elements
1 : Base (Tr1)
4 : Collector (Tr2)
2 : Emitter
5 : Collector (Tr1)
3 : Base (Tr2)
EIAJ : SC88A
SMini Type Package (5pin)
2.1
0.1
0.425
1.25
0.1
0.2
0.05
2.0
0.1
0.65
1
2
3
4
5
0.9
0.1
0.7
0.1
0.2
0 to 0.1
0.12
+0.05
0.02
0.2
0.1
0.425
0.65
1
5
Tr2
Tr1
2
3
4
2
Composite Transistors
XP1114
0
50
100
150
200
250
0
20
40
80
60
140
120
100
160
Ambient temperature Ta (C)
Total power dissipation P
T
(mW
)
0
0
12
2
10
4
8
6
40
120
80
160
140
100
60
20
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
Ta=25C
I
B
= 1.0mA
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
0.1mA
0.01
0.03
0.1 0.3
0.1
0.3
1
3
10
30
100
1
3
10
30
100
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
I
C
/I
B
=10
Ta=75C
25C
25C
0
1
3
100
200
300
400
10
30
100 300 1000
Forward current transfer ratio h
FE
Collector current I
C
(mA)
V
CE
= 10V
Ta=75C
25C
25C
0
0.1 0.3
6
5
4
3
2
1
1
3
10
30
100
Collector output capacitance C
ob
(pF
)
Collector to base voltage V
CB
(V)
f=1MHz
I
E
=0
Ta=25C
1
3
0.4
10
30
100
300
1000
3000
10000
1.4
1.2
1.0
0.8
0.6
Output current I
O
(
A
)
Input voltage V
IN
(V)
V
O
= 5V
Ta=25C
0.1
0.3
0.1 0.3
1
3
10
30
100
300
1000
1
3
10
30
100
Input voltage V
IN
(V
)
Output current I
O
(mA)
V
O
= 0.2V
Ta=25C
P
T
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
h
FE
-- I
C
C
ob
-- V
CB
I
O
-- V
IN
V
IN
-- I
O
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