1
Power Transistors
2SB1554
Silicon PNP epitaxial planar type
For power amplification
s
Features
q
High forward current transfer ratio h
FE
which has satisfactory linearity
q
Allowing automatic insertion with radial taping
s
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
60
60
20
8
4
2
15
2
150
55 to +150
Unit
V
V
V
A
A
A
W
C
C
s
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
CEO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 60V, I
E
= 0
V
CE
= 50V, I
B
= 0
V
EB
= 15V, I
C
= 0
I
C
= 10mA, I
B
= 0
V
CE
= 4V, I
C
= 0.8A
V
CE
= 4V, I
C
= 2A
I
C
= 2A, I
B
= 100mA
I
C
= 2A, I
B
= 100mA
V
CE
= 10V, I
C
= 0.5A, f = 1MHz
I
C
= 2A,
I
B1
= 100mA, I
B2
= 100mA,
V
CC
= 50V
min
60
80
30
typ
25
0.4
0.6
0.25
max
10
50
10
400
1.0
1.5
Unit
A
A
A
V
V
V
MHz
s
s
s
T
C
=25
C
Ta=25
C
Unit: mm
1:Base
2:Collector
3:Emitter
MT4 Type Package
1.0
10.0
0.2
0.55
0.1
2.5
0.2
2.5
0.2
4.2
0.2
13.0
0.2
2.5
0.2
18.0
0.5
Solder Dip
5.0
0.1
2.25
0.2
1.2
0.1
0.65
0.1
0.55
0.1
C1.0
90
C1.0
1 2 3
1.05
0.1
0.35
0.1
*
h
FE1
Rank classification
Rank
Q
P
O
h
FE1
80 to 160
120 to 240
200 to 400
2
Power Transistors
2SB1554
P
C
-- Ta
I
C
-- V
CE
V
CE(sat)
-- I
C
V
BE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
C
C
ob
-- V
CB
t
on
, t
stg
, t
f
-- I
C
Area of safe operation (ASO)
0
160
40
120
80
140
20
100
60
0
20
15
5
10
(1) T
C
=Ta
(2) Without heat sink
(P
C
=2.0W)
(1)
(2)
Ambient temperature Ta (C)
Collector power dissipation P
C
(W
)
0
16
4
12
8
14
2
10
6
0
4.0
3.0
1.0
2.5
3.5
2.0
0.5
1.5
T
C
=25C
45mA
40mA
35mA
30mA
25mA
20mA
15mA
10mA
5mA
I
B
=50mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=20
25C
T
C
=100C
25C
Collector current I
C
(A)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.01
0.1
1
10
0.03
0.3
3
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=20
T
C
=25C
25C
100C
Collector current I
C
(A)
Base to emitter saturation voltage V
BE(sat)
(V
)
0.001
0.01
0.1
1
10
1
10
10
2
10
3
10
5
10
4
V
CE
=4V
T
C
=100C
25C
25C
Collector current I
C
(A)
Forward current transfer ratio h
FE
0.01
0.1
1
10
0.03
0.3
3
0.1
0.3
1
3
10
30
100
300
1000
V
CE
=10V
f=1MHz
T
C
=25C
Collector current I
C
(A)
Transition frequency f
T
(MHz
)
0.1
1
10
100
0.3
3
30
1
10
10
2
10
3
10
4
I
E
=0
f=1MHz
T
C
=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
0
5
4
1
3
2
0.01
0.03
0.1
0.3
1
3
10
30
100
t
stg
t
f
t
on
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=20
(I
B1
=I
B2
)
V
CC
=50V
T
C
=25C
Collector current I
C
(A)
Switching time t
on
,t
stg
,t
f
(
s
)
1
10
100
1000
3
30
300
0.01
0.03
0.1
0.3
1
3
10
30
100
I
CP
I
C
10ms
t=1ms
Non repetitive pulse
T
C
=25C
DC
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A
)
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