Power Transistors
1
2SB1645
Silicon PNP triple diffusion planar type Darlington
For power amplification
I Features
Satisfactory forward current transfer ratio h
FE
characteristics
Wide area of safe operation (ASO)
Optimum for the output stage of a HiFi audio amplifier
I Absolute Maximum Ratings T
C
= 25C
Unit: mm
Parameter
Symbol
Rating
Unit
Collector to base voltage
V
CBO
-160
V
Collector to emitter voltage
V
CEO
-160
V
Emitter to base voltage
V
EBO
-5
V
Peak collector current
I
CP
-15
A
Collector current
I
C
-8
A
Collector power
T
C
= 25C
P
C
100
W
dissipation
T
a
= 25C
3
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
I Electrical Characteristics T
C
= 25C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
I
CBO
V
CB
= -160 V, I
E
= 0
-100
A
I
CEO
V
CB
= -160 V, I
E
= 0
-100
A
Emitter cutoff current
I
EBO
V
EB
= -5 V, I
C
= 0
-100
A
Collector to emitter voltage
V
CEO
I
C
= -10 mA, I
B
= 0
-160
V
Forward current transfer ratio
h
FE1
V
CE
= -5 V, I
C
= -1 A
500
h
FE2
*
V
CE
= -5 V, I
C
= -7 A
3 500
15 000
Collector to emitter saturation voltage
V
CE(sat)
I
C
= -7 A, I
B
= -7 mA
-3
V
Base to emitter saturation voltage
V
BE(sat)
I
C
= -7 A, I
B
= -7 mA
-3
V
Transition frequency
f
T
V
CE
= -10 V, I
C
= - 0.5 A, f = 1 MHz
20
MHz
Turn-on time
t
on
I
C
= 7 A, I
B1
= -7 mA, I
B2
= 7 mA
1.0
s
Storage time
t
stg
V
CC
= -50 V
1.5
s
Fall time
t
f
1.2
s
Note) *: Rank classification
Rank
P
Q
h
FE2
5 000 to 15 000 3 500 to 10 000
15.5
0.5
3.0
0.3
(4.0)
2.0
0.2
1.1
0.1
5.45
0.3
0.7
0.1
5
5
5
5
5
10.9
0.5
1
5
2
3
(10.0)
(1.2)
(2.0)
Solder Dip
3.3
0.3
5.5
0.3
(2.0)
26.5
0.5
(23.4)
22.0
0.5
18.6
0.5
(2.0)
3.2
0.1
(4.5)
1: Base
2: Collector
3: Emitter
TOP-3E Package
Internal Connection
B
C
E
2SB1645
Power Transistors
2
P
C
T
a
Area of safe operation (ASO)
0
80
60
20
100
120
0
20
40
60
80 100 120 140 160
(1)
(2)
40
(3)
(1) T
C
= T
a
(2) With a 100
100 2 mm
3
Al heat sink
(3) Without heat sink
Ambient temperature T
a
(
C)
Collector power dissipation P
C
(W
)
- 0.001
-1
- 0.01
- 0.1
-1
-10
-10
-100
-1 000
-100
I
CP
I
C
t
= 1 s
t
= 10 ms
t
= 1 ms
Non repetitive pulse
T
C
= 25C
Collector current I
C
(A
)
Collector to emitter voltage V
CE
(V)
V
CEO
max.
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