Transistors
1
Publication date: April 2004
SJC00304AED
2SB1699
Silicon PNP epitaxial planar type
For power amplification
Features
Low collector-emitter saturation voltage V
CE(sat)
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
-60
V
Collector-emitter voltage (Base open)
V
CEO
-60
V
Emitter-base voltage (Collector open)
V
EBO
-6
V
Collector current
I
C
-2
A
Peak collector current
I
CP
-4
A
Collector power dissipation
*
P
C
1
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Electrical Characteristics T
a
= 25C 3C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Note) *: Print circuit board: Copper foil area of 1 cm
2
or more, and the board
thickness of 1.7 mm for the collector portion
Marking Symbol: 3A
4.5
0.1
3.0
0.15
45
2.6
0.1
0.4 max.
1.6
0.2
1.5
0.1
4.0
2.5
0.1
3
+0.25 0.20
1.0
+0.1 0.2
0.5
0.08
0.4
0.04
0.4
0.08
1
2
3
1.5
0.1
3
Unit: mm
1: Base
2: Collector
3: Emitter
MiniP3-F1 Package
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
= -1 mA, I
B
= 0
-60
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= -60 V, I
E
= 0
-100
A
Collector-emitter cut-off current (Base open)
I
CEO
V
CE
= -60 V, I
B
= 0
-100
A
Forward current transfer ratio
*
h
FE1
V
CE
= -4 V, I
C
= -1 A
80
250
h
FE2
V
CE
= -4 V, I
C
= - 0.2 A
60
h
FE3
V
CE
= -4 V, I
C
= -2 A
30
Collector-emitter saturation voltage
*
V
CE(sat)
I
C
= -2 A, I
B
= -250 mA
- 0.5
V
Turn-on time
t
on
I
C
= -1 A, I
B1
= 0.1 A
0.2
s
Storage time
t
stg
I
B2
= - 0.1 A, V
CC
= -50 V
0.4
s
Fall time
t
f
0.1
s
Transition frequency
f
T
V
CB
= -10 V, I
E
= 50 mA, f = 200 MHz
180
MHz
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general elec-
tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
tion equipment, life support systems and safety devices) in which exceptional quality and reliability are
required, or if the failure or malfunction of the products may directly jeopardize life or harm the human
body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifica-
tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
ing, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such
as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent
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2003 SEP
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