ChipFind - документация

Электронный компонент: 2SB709A

Скачать:  PDF   ZIP
Transistors
1
Publication date: March 2003
SJD00047BED
2SB0709A
(2SB709A)
Silicon PNP epitaxial planar type
For general amplification
Complementary to 2SD0601A (2SD601A)
Features
High forward current transfer ratio h
FE
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Absolute Maximum Ratings T
a
= 25C
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
-45
V
Collector-emitter voltage (Base open)
V
CEO
-45
V
Emitter-base voltage (Collector open)
V
EBO
-7
V
Collector current
I
C
-100
mA
Peak collector current
I
CP
-200
mA
Collector power dissipation
P
C
200
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= -10 A, I
E
= 0
-45
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= -2 mA, I
B
= 0
-45
V
Emitter-base voltage (Collector open)
V
EBO
I
E
= -10 A, I
C
= 0
-7
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= -20 V, I
E
= 0
- 0.1
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= -10 V, I
B
= 0
-100
A
Forward current transfer ratio
*
h
FE
V
CE
= -10 V, I
C
= -2 mA
160
460
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -100 mA, I
B
= -10 mA
- 0.3
- 0.5
V
Transition frequency
f
T
V
CB
= -10 V, I
E
= 1 mA, f = 200 MHz
80
MHz
Collector output capacitance
C
ob
V
CB
= -10 V, I
E
= 0, f = 1 MHz
2.7
pF
(Common base, input open circuited)
Electrical Characteristics T
a
= 25C 3C
0.40
+0.10
0.05
(0.65)
1.50
+0.25 0.05
2.8
+0.2 0.3
2
1
3
(0.95) (0.95)
1.9
0.1
2.90
+0.20
0.05
0.16
+0.10
0.06
0.4
0.2
5
10
0 to 0.1
1.1
+0.2 0.1
1.1
+0.3 0.1
Unit: mm
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Note) The part number in the parenthesis shows conventional part number.
Marking Symbol: B
Rank
Q
R
S
No-rank
h
FE
160 to 260
210 to 340
290 to 460
160 to 460
Marking symbol
BQ
BR
BS
B
Product of no-rank is not classified and have no marking symbol for rank.
2SB0709A
2
SJC00047BED
I
B
V
BE
I
C
V
BE
V
CE(sat)
I
C
P
C
T
a
I
C
V
CE
I
C
I
B
h
FE
I
C
f
T
I
E
C
ob
V
CB
0
160
40
120
80
0
240
200
160
120
80
40
Collector power dissipation P
C
(mW
)
Ambient temperature T
a
(
C)
0
-12
-10
-8
-2
-6
-4
0
-120
-100
-80
-60
-40
-20
T
a
= 25C
-250 A
-200 A
-150 A
-100 A
-50 A
I
B
= -300 A
Collector current I
C
(mA
)
Collector-emitter voltage V
CE
(V)
0
-400
-100
-300
-200
0
-60
-50
-40
-30
-20
-10
V
CE
= -5 V
T
a
= 25C
Base current I
B
(
A)
Collector current I
C
(mA
)
0
-1.6
- 0.4
- 0.8
-1.2
0
-400
-300
-100
-250
-350
-200
-50
-150
V
CE
= -5 V
T
a
= 25C
Base-emitter voltage V
BE
(V)
Base current I
B
(
A
)
0
-2.0
-1.6
- 0.4
-1.2
- 0.8
0
-240
-200
-160
-120
-80
-40
V
CE
= -5 V
T
a
= 75C
-25C
25
C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA
)
-1
-10
-100
-1000
- 0.001
- 0.01
- 0.1
-1
-10
I
C
/ I
B
= 10
T
a
= 75C
25
C
-25C
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(mA)
-1
-10
-100
-1000
0
600
500
400
300
200
100
V
CE
= -10 V
T
a
= 75C
25
C
-25C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
0.1
1
10
100
0
160
120
40
100
140
80
20
60
V
CB
= -10 V
T
a
= 25C
Transition frequency f
T
(MHz
)
Emitter current I
E
(mA)
-1
-10
-100
0
8
6
2
5
7
4
1
3
I
E
= 0
f
= 1 MHz
T
a
= 25C
Collector-base voltage V
CB
(V)
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
2SB0709A
3
SJC00047BED
h Parameter
V
CE
NF
I
E
NF
I
E
h Parameter
I
E
0.01
0.1
1
10
0
6
5
4
3
2
1
V
CB
= -5 V
f
= 1 kHz
R
g
= 2 k
T
a
= 25C
Noise figure NF
(dB
)
Emitter current I
E
(mA)
0.1
1
10
0
20
16
12
8
4
18
14
10
6
2
V
CB
= -5 V
R
g
= 50 k
T
a
= 25C
f
= 100 Hz
10 kHz
1 kHz
Noise figure NF
(dB
)
Emitter current I
E
(mA)
0.1
1
10
1
100
10
V
CE
= -5 V
f
= 270 Hz
T
a
= 25C
h
fe
h
oe
(
S)
h
ie
(k
)
h
re
(
10
-4
)
h Parameter
Emitter current I
E
(mA)
-1
-10
-100
1
100
10
I
E
= 2 mA
f
= 270 Hz
T
a
= 25C
h
fe
h
oe
(
S)
h
ie
(k
)
h
re
(
10
-4
)
h Parameter
Collector-emitter voltage V
CE
(V)
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL