1
Transistor
2SB774
Silicon PNP epitaxial planer type
For low-frequency amplification
s
Features
q
High emitter to base voltage V
EBO
.
q
Protective diodes and resistances between emitter and base can
be omitted.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO92
EIAJ:SC43A
5.0
0.2
4.0
0.2
5.1
0.2
13.5
0.5
0.45
+0.2
0.1
0.45
+0.2
0.1
1.27
1.27
2.3
0.2
2.54
0.15
2
1
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
30
25
15
200
100
400
150
55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE1
*
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 10V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10
A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CE
= 10V, I
C
= 2mA
V
CE
= 2V, I
C
= 100mA
I
C
= 100mA, I
B
= 10mA
V
CB
= 10V, I
E
= 2mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
30
25
15
210
90
typ
150
4
max
1
100
460
0.5
Unit
A
A
V
V
V
V
MHz
pF
*
h
FE1
Rank classification
Rank
R
S
h
FE1
210 ~ 340
290 ~ 460
2
Transistor
2SB774
0
160
40
120
80
140
20
100
60
0
500
400
300
200
100
450
350
250
150
50
Ambient temperature Ta (C)
Collector power dissipation P
C
(mW
)
0
12
10
8
2
6
4
0
240
200
160
120
80
40
Ta=25C
0.2mA
1.6mA
0.8mA
1.4mA
0.6mA
1.0mA
1.2mA
0.4mA
I
B
=1.8mA
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0
2.0
1.6
0.4
1.2
0.8
0
200
160
120
80
40
180
140
100
60
20
V
CE
=10V
Ta=75C
25C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA
)
0.1
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
Ta=75C
25C
25C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
1
10
100
0.3
3
30
0
600
500
400
300
200
100
V
CE
=10V
Ta=75C
25C
25C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
10
1000
100
300
30
V
CB
=10V
Ta=25C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
1
3
10
30
100
0
12
10
8
6
4
2
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
P
C
-- Ta
I
C
-- V
CE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
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