Power Transistors
1
Publication date: February 2003
SJD00022BED
2SB0942
(2SB942)
, 2SB0942A
(2SB942A)
Silicon PNP epitaxial planar type
For low-frequency power amplification
Complementary to 2SD1267, 2SD1267A
Features
High forward current transfer ratio h
FE
which has satisfactory linearity
Large collector-emitter saturation voltage V
CE(sat)
Full-pack package which can be installed to the heat sink with one screw
Absolute Maximum Ratings T
C
= 25C
Electrical Characteristics T
C
= 25C 3C
Unit: mm
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Parameter
Symbol
Rating
Unit
Collector-base voltage
2SB0942
V
CBO
-60
V
(Emitter open)
2SB0942A
-80
Collector-emitter voltage 2SB0942
V
CEO
-60
V
(Base open)
2SB0942A
-80
Emitter-base voltage (Collector open)
V
EBO
-5
V
Collector current
I
C
-4
A
Peak collector current
I
CP
-8
A
Collector power
P
C
40
W
dissipation
T
a
= 25C
2
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage
2SB0942
V
CEO
I
C
= -30 mA, I
B
= 0
-60
V
(Base open)
2SB0942A
-80
Base-emitter voltage
V
BE
V
CE
= -4 V, I
C
= -3 A
-2
V
Collector-emitter
2SB0942
I
CES
V
CE
= -60 V, V
BE
= 0
-400
A
cutoff current (E-B short)
2SB0942A
V
CE
= -80 V, V
BE
= 0
-400
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= -30 V, I
B
= 0
-700
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= -5 V, I
C
= 0
-1
mA
Forward current transfer ratio
h
FE1
*
V
CE
= -4 V, I
C
= -1 A
40
250
h
FE2
V
CE
= -4 V, I
C
= -3 A
15
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -4 A, I
B
= - 0.4 A
-1.5
V
Transition frequency
f
T
V
CE
= -10 V, I
C
= - 0.1 A, f = 10 MHz
30
MHz
Turn-on time
t
on
I
C
= -4 A, I
B1
= - 0.4 A, I
B2
= 0.4 A
0.2
s
Storage time
t
stg
V
CC
= -50 V
0.5
s
Fall time
t
f
0.2
s
Note) The part numbers in the parenthesis show conventional part number.
10.0
0.2
5.5
0.2
7.5
0.2
16.7
0.3
0.7
0.1
14.0
0.5
Solder Dip
(4.0)
0.5
+0.2
0.1
1.4
0.1
1.3
0.2
0.8
0.1
2.54
0.3
5.08
0.5
2
1
3
2.7
0.2
4.2
0.2
4.2
0.2
3.1
0.1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
h
FE1
40 to 90
70 to 150
120 to 250
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2002 JUL
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