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Электронный компонент: 2SB946

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Power Transistors
1
Publication date: February 2003
SJD00025BED
2SB0946
(2SB946)
Silicon PNP epitaxial planar type
For power switching
Complementary to 2SD1271
Features
Low collector-emitter saturation voltage V
CE(sat)
Satisfactory linearity of forward current transfer ratio h
FE
Large collector current I
C
Full-pack package which can be installed to the heat sink with one screw
Absolute Maximum Ratings T
C
= 25C
Electrical Characteristics T
C
= 25C 3C
Unit: mm
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
V
CEO
I
C
=
-10 mA, I
B
= 0
-80
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= -100 V, I
E
= 0
-10
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= -5 V, I
C
= 0
-50
A
Forward current transfer ratio
h
FE1
V
CE
= -2 V, I
C
= - 0.1 A
45
h
FE2
*
V
CE
= -2 V, I
C
= -3 A
60
260
Collector-emitter saturation voltage
V
CE(sat)
I
C
= -5 A, I
B
= - 0.25 A
- 0.5
V
Base-emitter saturation voltage
V
BE(sat)
I
C
= -5 A, I
B
= - 0.25 A
-1.5
V
Transition frequency
f
T
V
CE
= -10 V, I
C
= - 0.5 A, f = 10 MHz
30
MHz
Turn-on time
t
on
I
C
= -3 A, I
B1
= - 0.3 A, I
B2
= 0.3 A
0.5
s
Storage time
t
stg
V
CC
= -50 V
1.5
s
Fall time
t
f
0.1
s
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
-130
V
Collector-emitter voltage (Base open)
V
CEO
-80
V
Emitter-base voltage (Collector open)
V
EBO
-7
V
Collector current
I
C
-7
A
Peak collector current
I
CP
-15
A
Collector power
P
C
40
W
dissipation
T
a
= 25C
2
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Note) The part number in the parenthesis shows conventional part number.
Rank
R
Q
P
h
FE2
60 to 120
90 to 180
130 to 260
10.0
0.2
5.5
0.2
7.5
0.2
16.7
0.3
0.7
0.1
14.0
0.5
Solder Dip
(4.0)
0.5
+0.2
0.1
1.4
0.1
1.3
0.2
0.8
0.1
2.54
0.3
5.08
0.5
2
1
3
2.7
0.2
4.2
0.2
4.2
0.2
3.1
0.1
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
2SB0946
2
SJD00025BED
V
BE(sat)
I
C
h
FE
I
C
f
T
I
C
P
C
T
a
I
C
V
CE
V
CE(sat)
I
C
C
ob
V
CB
t
on
, t
stg
, t
f
I
C
Safe operation area
0
160
40
120
80
0
10
20
30
40
50
(1)T
C
=Ta
(2)With a 100
1002mm
Al heat sink
(3)With a 50
502mm
Al heat sink
(4)Without heat sink
(P
C
=2W)
(1)
(4)
(3)
(2)
Collector power dissipation P
C
(W)
Ambient temperature T
a
(
C)
0
-2
-4
-6
-10
-8
0
-10
-2
-4
-8
-6
T
C
=25C
I
B
=120mA
110mA
100mA
80mA
90mA
70mA
60mA
40mA
30mA
20mA
10mA
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
- 0.01
- 0.1
- 0.1
-1
-10
-100
-1
-10
-100
I
C
/I
B
=20
25C
T
C
=100C
25C
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(A)
- 0.01
- 0.01
- 0.1
-1
-10
-100
- 0.1
-1
-10
I
C
/I
B
=20
T
C
=25C
25C
100C
Base-emitter saturation voltage V
BE(sat)
(V)
Collector current I
C
(A)
- 0.1
-1
-10
-100
1
10
Forward current transfer ratio h
FE
Collector current I
C
(A)
10
2
10
4
10
3
V
CE
=2V
T
C
=100C
25C
25C
- 0.01
- 0.1
-1
-10
1
10
10
2
10
4
10
3
V
CE
=10V
f=10MHz
T
C
=25C
Collector current I
C
(A)
Transition frequency f
T
(MHz)
- 0.1
-1
-10
-100
1
10
10
2
10
3
10
4
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
I
E
=0
f=1MHz
T
C
=25C
0
0.01
0.1
1
10
100
-8
-2
-6
-4
Turn-on time t
on
, Storage time t
stg
, Fall time t
f
(
s)
Collector current I
C
(A)
t
stg
t
on
t
f
Pulsed t
w
=1ms
Duty cycle=1%
I
C
/I
B
=10
(I
B1
=I
B2
)
V
CC
=50V
T
C
=25C
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
0.01
-1
- 0.1
-1
-10
-100
-10
-100
-1 000
t=1ms
t=10ms
t=0.5ms
I
CP
I
C
Non repetitive pulse
T
C
=25C
DC
2SB0946
3
SJD00025BED
R
th
t
10
-2
10
-1
1
10
10
3
10
2
10
-4
10
4
10
3
10
2
10
1
10
-1
10
-2
10
-3
Time t (s)
Thermal resistance R
th
(

C/W)
(1)
(2)
(1)Without heat sink
(2)With a 100
1002mm Al heat sink
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Consult our sales staff in advance for information on the following applications:
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2002 JUL