Power Transistors
1
Publication date: February 2003
SJD00094BED
2SC1846
Silicon NPN epitaxial planar type
For medium output power amplification
Complementary to 2SA0885
Features
Low collector-emitter saturation voltage V
CE(sat)
Output of 3 W can be obtained by a complementary pair with
2SA0885
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
Absolute Maximum Ratings T
a
= 25C
Electrical Characteristics T
a
= 25C 3C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 1 mA, I
E
= 0
45
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 2 mA, I
B
= 0
35
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 20 V, I
E
= 0
0.1
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= 20 V, I
B
= 0
100
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 5 V, I
C
= 0
10
A
Forward current transfer ratio
h
FE1
*
V
CE
= 10 V, I
C
= 500 mA
85
340
h
FE2
V
CE
= 5 V, I
C
= 1 A
50
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 500 mA, I
B
= 50 mA
0.5
V
Transition frequency
f
T
V
CB
= 10 V, I
E
= -50 mA, f = 200 MHz
200
MHz
Collector output capacitance
C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz
20
pF
(Common base, input open circuited)
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
8.0
+0.5
0.1
1.9
0.1
3.05
0.1
3.8
0.3
11.0
0.5
16.0
1.0
3.2
0.2
0.75
0.1
0.5
0.1
2.3
0.2
4.6
0.2
0.5
0.1
1.76
0.1
1
2
3
3.16
0.1
Rank
Q
R
S
h
FE1
85 to 170
120 to 240
170 to 340
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
45
V
Collector-emitter voltage (Base open)
V
CEO
35
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
1
A
Peak collector current
I
CP
1.5
A
Collector power dissipation
P
C
1.2
W
5.0
*
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
Note) *: With a 100
100 2 mm Al heat sink
2SC1846
2
SJD00094BED
P
C
T
a
I
C
V
CE
I
C
I
B
V
CE(sat)
I
C
V
BE(sat)
I
C
h
FE
I
C
f
T
I
E
C
ob
V
CB
V
CER
R
BE
0
6
5
4
3
2
1
0
200
40
80
160
120
Collector power dissipation P
C
(W
)
Ambient temperature T
a
(
C)
(1)With a 100
1002mm
Al heat sink
(2)Without heat sink
(1)
(2)
0
1.50
1.25
1.00
0.75
0.50
0.25
0
10
2
4
8
6
Collector current I
C
(A
)
Collector-emitter voltage V
CE
(V)
T
C
=25C
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
I
B
=10mA
0
1.2
1.0
0.8
0.6
0.4
0.2
0
12
2
10
4
8
6
Base current I
B
(mA)
Collector current I
C
(A
)
V
CE
=10V
Ta=25C
0.001
0.01
0.1
1
0.01
0.1
1
Collector-emitter saturation voltage V
CE(sat)
(V
)
Collector current I
C
(A)
I
C
/I
B
=10
25C
25C
T
C
=100C
0.01
0.01
1
0.1
0.1
1
10
Base-emitter saturation voltage V
BE(sat)
(V
)
Collector current I
C
(A)
I
C
/I
B
=10
T
C
=25C
25C
100C
0.01
1
0.1
1
10
100
1000
Forward current transfer ratio h
FE
Collector current I
C
(A)
V
CE
=10V
T
C
=100C
25C
25C
-1
-10
-100
0
40
80
120
200
160
Transition frequency f
T
(MHz
)
Emitter current I
E
(mA)
V
CB
=10V
f=200MHz
T
C
=25C
1
10
100
0
50
40
30
20
10
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
I
E
=0
f=1MHz
T
C
=25C
0.1
1
10
100
0
20
40
60
80
100
Base-emitter resistance R
BE
(k
)
Collector-emitter voltage
(Resistor between B and E)
V
CER
(V)
I
C
=10mA
T
C
=25C
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the latest specifications satisfy your requirements.
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mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
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2002 JUL
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