Power Transistors
1
Publication date: February 2003
SJD00095BED
2SC1847
Silicon NPN epitaxial planar type
For medium output power amplification
Complementary to 2SA0886
Features
Output of 4 W can be obtained by a complementary pair with
2SA0886
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
Absolute Maximum Ratings T
a
= 25C
Electrical Characteristics T
a
= 25C 3C
Unit: mm
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage (Emitter open)
V
CBO
I
C
= 1 mA, I
E
= 0
50
V
Collector-emitter voltage (Base open)
V
CEO
I
C
= 2 mA, I
B
= 0
40
V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 20 V, I
E
= 0
1
A
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= 10 V, I
B
= 0
100
A
Emitter-base cutoff current (Collector open)
I
EBO
V
EB
= 5 V, I
C
= 0
10
A
Forward current transfer ratio
*
h
FE
V
CE
= 5 V, I
C
= 1 A
80
220
Collector-emitter saturation voltage
V
CE(sat)
I
C
= 2 A, I
B
= 0.2 A
1
V
Base-emitter saturation voltage
V
BE(sat)
I
C
= 2 A, I
B
= 0.2 A
1.5
V
Transition frequency
f
T
V
CB
= 5 V, I
E
= - 0.5 A, f = 200 MHz
150
MHz
Collector output capacitance
C
ob
V
CB
= 20 V, I
E
= 0, f = 1 MHz
35
pF
(Common base, input open circuited)
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
8.0
+0.5
0.1
1.9
0.1
3.05
0.1
3.8
0.3
11.0
0.5
16.0
1.0
3.2
0.2
0.75
0.1
0.5
0.1
2.3
0.2
4.6
0.2
0.5
0.1
1.76
0.1
1
2
3
3.16
0.1
Rank
Q
R
h
FE
80 to 160
120 to 220
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
V
CBO
50
V
Collector-emitter voltage (Base open)
V
CEO
40
V
Emitter-base voltage (Collector open)
V
EBO
5
V
Collector current
I
C
1.5
A
Peak collector current
I
CP
3
A
Collector power dissipation
P
C
1.2
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 to +150
C
2SC1847
2
SJD00095BED
P
C
T
a
I
C
V
CE
V
CE(sat)
I
C
V
BE(sat)
I
C
h
FE
I
C
f
T
I
E
C
ob
V
CB
V
CER
R
BE
I
CBO
T
a
0
160
40
120
80
0
1.6
1.2
0.8
0.4
Collector power dissipation P
C
(W
)
Ambient temperature T
a
(
C)
0
1.0
3.0
2.0
4.0
3.5
2.5
1.5
0.5
0
10
2
4
8
6
Collector current I
C
(A)
Collector-emitter voltage V
CE
(V)
T
C
=25C
30mA
35mA
20mA
25mA
10mA
5mA
15mA
I
B
=40mA
0.001
0.01
0.1
1
0.01
0.1
1
Collector-emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(A)
I
C
/I
B
=10
25C
25C
T
C
=100C
0.01
0.01
1
0.1
0.1
1
10
Base-emitter saturation voltage V
BE(sat)
(V)
Collector current I
C
(A)
I
C
/I
B
=10
T
C
=25C
25C
100C
0.01
1
0.1
1
10
100
1000
Forward current transfer ratio h
FE
Collector current I
C
(A)
V
CE
=5V
T
C
=100C
25C
25C
-0.01
-0.1
-1
-10
0
240
200
160
120
80
40
Transition frequency f
T
(MHz)
Emitter current I
E
(A)
V
CB
=5V
f=200MHz
T
C
=25C
0
1
120
100
80
60
40
20
10
100
Collector output capacitance
(Common base, input open circuited)
C
ob
(pF)
Collector-base voltage V
CB
(V)
I
E
=0
f=1MHz
T
C
=25C
0
60
50
40
30
20
10
0.001
0.01
0.1
1
10
Base-emitter resistance R
BE
(k
)
Collector-emitter voltage
(Resistor between B and E)
V
CER
(V)
T
C
=25C
0
100
80
60
40
20
1
1000
100
10
I
CBO
(T
a
)
I
CBO
(T
a
=
25
C
)
Ambient temperature T
a
(
C)
V
CB
=20V
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and semiconductors described in this material
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the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
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Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
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2002 JUL
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